Forming-Free Selectors Based on Te in an Insulating SiO x Matrix

• Published in: IEEE transactions on electron devices Vol. 71; no. 1; pp. 530 - 535
• Main Authors: Datye, Isha M., Vaziri, Sam, Ambrosi, Elia, Khan, Asir Intisar, Kwon, Heungdong, Wu, Cheng-Hsien, Hsu, Chen-Feng, Guy, Jeremy, Lee, Tung-Ying, Wong, H.-S. Philip, Bao, Xinyu
• Format: Journal Article
• Language: English
• Published: New York The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 01.01.2024
• Subjects: Low voltage; Selectors; Temperature dependence; Threshold voltage

Low voltage and low OFF-current selectors are needed to meet the requirements for cross-point array architectures in embedded memories. Chalcogenide-based selectors have been widely studied for such applications, but no single material system has yet demonstrated all the specifications required for...