Approaching the intrinsic exciton physics limit in two-dimensional semiconductor diodes

• Published in: Nature (London) Vol. 599; no. 7885; pp. 404 - 410
• Main Authors: Chen, Peng, Atallah, Timothy L., Lin, Zhaoyang, Wang, Peiqi, Lee, Sung-Joon, Xu, Junqing, Huang, Zhihong, Duan, Xidong, Ping, Yuan, Huang, Yu, Caram, Justin R., Duan, Xiangfeng
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 18.11.2021; Nature Publishing Group
• Subjects: 140/125; 142/126; 639/766/1130/2799; 639/925/357/1018; 639/925/927/1007; Augers; Charge density; Diffusion; Diodes; Diodes, Semiconductor; Doping; Electric fields; Electrostatic properties; Exciton theory; Excitons; Humanities and Social Sciences; Interfaces; multidisciplinary; Optical properties; Optoelectronic devices; Photoelectric effect; Photoelectric emission; Photoluminescence; Photons; Recombination; Science; Science (multidisciplinary); Semiconductor diodes; Semiconductors; Short circuits; Tungsten; United States

Two-dimensional (2D) semiconductors have attracted intense interest for their unique photophysical properties, including large exciton binding energies and strong gate tunability, which arise from their reduced dimensionality 1 – 5 . Despite considerable efforts, a disconnect persists between the fu...