Monte Carlo simulation of heavy species (Indium and Germanium) ion implantation into silicon

Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations....

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Bibliographic Details
Published inJournal of technology computer aided design pp. 1 - 20
Main Authors Chen, Y., Obradovic, B., Morris, M., Wang, G., Balamurugan, G., Li, D., Tasch, A. F., Kamenitsa, D., McCoy, W., Baumann, S., Bleier, R., Sieloff, D., Dyer, D., Zeitzoff, P.
Format Journal Article
LanguageEnglish
Published N/A 1996
Subjects
Crystals
Germanium
Implants
Impurities
Indium
Scattering
Silicon
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Summary:Monte Carlo ion-implant models for germanium and indium implantation into single-crystal silicon have been developed and are described in this paper. The models have been incorporated in the UT-MARLOWE ion implantation simulator, and have been developed primarily for use on engineering workstations. These models provide the required as-implanted impurity profiles as well as damage profiles, which can be used as inputs for transient enhanced diffusion simulation and subsequent multiple implant simulation. A comparison of simulation results with experimental data shows that the models predict both the impurity profiles and the damage profiles very successfully for a wide range of implant conditions. The damage profiles from germanium implant simulations have been used for subsequent multiple implant simulations and excellent agreement with experimental results has been achieved.
ISSN:1097-2102
1097-2102
DOI:10.1109/TCAD.1996.6449175