Enhanced Photocurrent and Suppressed Dark Current of MXene/Ge Heterostructure-Based Near-Infrared Photodetectors Enabled by Surface Charge Transfer Induced Inversion Layer

• Published in: IEEE transactions on electron devices pp. 1 - 7
• Main Authors: Xie, Chao, Cheng, Yu, Liu, Shisi, Xu, Shijie, Cui, Xisheng, Yang, Liangpan, Yang, Wenhua, Huang, Zhixiang
• Format: Journal Article
• Language: English
• Published: IEEE 24.10.2024
• Subjects: 2-D material; Dark current; Detectors; Electrons; Germanium; heterostructure; inversion layer; Junctions; near-infrared (NIR) photodetector; Performance evaluation; Photoconductivity; Photodetectors; Substrates; surface charge transfer doping; Surface treatment

2-D MXene/narrow-gap material heterostructures represent a class of hopeful platforms for highly efficient and low-budget near-infrared (NIR) photodetection. Nonetheless, performance improvement is astricted by the comparatively low junction barrier height due to minor work function discrepancy betw...