Spin-Polarized Positron Annihilation Measurement on Ga Vacancies in p-type GaN

• Published in: E-journal of surface science and nanotechnology Vol. 16; pp. 347 - 350
• Main Authors: Kawasuso, Atsuo, Sakai, Seiji, Miyashita, Atsumi, Maekawa, Masaki
• Format: Journal Article
• Language: English
• Published: Tokyo The Japan Society of Vacuum and Surface Science 28.07.2018; Japan Science and Technology Agency
• Subjects: Asymmetry; Electron spin; Electrons; Gallium nitride; Ion implantation methods; Magnetism; Positron annihilation; Positron spectroscopy; Positrons; Vacancies

Nitrogen-implanted p-type GaN films have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized positrons and magnetization (M—H) measurements. The DBAR spectra showed asymmetry upon magnetic-field reversal at 300 K, while no asymmetry appe...