Spin-Polarized Positron Annihilation Measurement on Ga Vacancies in p-type GaN
Nitrogen-implanted p-type GaN films have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized positrons and magnetization (M—H) measurements. The DBAR spectra showed asymmetry upon magnetic-field reversal at 300 K, while no asymmetry appe...
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| Published in | E-journal of surface science and nanotechnology Vol. 16; pp. 347 - 350 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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Tokyo
The Japan Society of Vacuum and Surface Science
28.07.2018
Japan Science and Technology Agency |
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| ISSN | 1348-0391 1348-0391 |
| DOI | 10.1380/ejssnt.2018.347 |
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| Abstract | Nitrogen-implanted p-type GaN films have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized positrons and magnetization (M—H) measurements. The DBAR spectra showed asymmetry upon magnetic-field reversal at 300 K, while no asymmetry appeared at 30 K. This result indicates that excess electron spins at Ga vacancies are aligned under the application of magnetic field at 300 K, but such spin ordering vanishes at low temperatures. No hysteresis was found in M—H curves both at 10 K and 300 K. This means that no macroscopic magnetism appears even though excess electron spins at Ga vacancies are introduced. [DOI: 10.1380/ejssnt.2018.347] |
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| AbstractList | Nitrogen-implanted p-type GaN films have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized positrons and magnetization (M—H) measurements. The DBAR spectra showed asymmetry upon magnetic-field reversal at 300 K, while no asymmetry appeared at 30 K. This result indicates that excess electron spins at Ga vacancies are aligned under the application of magnetic field at 300 K, but such spin ordering vanishes at low temperatures. No hysteresis was found in M—H curves both at 10 K and 300 K. This means that no macroscopic magnetism appears even though excess electron spins at Ga vacancies are introduced. [DOI: 10.1380/ejssnt.2018.347] |
| Author | Miyashita, Atsumi Maekawa, Masaki Kawasuso, Atsuo Sakai, Seiji |
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| Cites_doi | 10.1016/0375-9601(70)90614-6 10.1103/PhysRevB.78.184404 10.1103/PhysRevB.73.193301 10.1063/1.3291134 10.1088/0953-8984/22/43/436002 10.1103/PhysRevLett.89.216403 10.1063/1.3158535 10.1063/1.2885730 10.1063/1.4979696 10.1016/S0921-4526(99)00400-7 10.1103/RevModPhys.60.701 10.1063/1.3062822 10.1088/0953-8984/22/7/073202 10.1103/PhysRevB.77.205411 10.1038/430630a 10.1103/PhysRevB.83.205205 10.1143/JJAP.33.3330 10.1103/PhysRevB.79.100403 10.1103/PhysRevB.81.085207 10.1007/978-3-662-03893-2 10.1103/PhysRevB.83.100406 10.1063/1.2769391 10.1103/PhysRevLett.79.3030 10.1088/0953-8984/22/21/216004 10.1088/1742-6596/505/1/012033 10.1063/1.3609964 10.1039/C4RA11658E 10.1063/1.3679560 10.1103/PhysRevB.72.045336 10.1063/1.2833432 10.1103/PhysRevLett.100.117204 |
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| Snippet | Nitrogen-implanted p-type GaN films have been investigated through the Doppler broadening of annihilation radiation (DBAR) measurements with spin-polarized... |
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| SubjectTerms | Asymmetry Electron spin Electrons Gallium nitride Ion implantation methods Magnetism Positron annihilation Positron spectroscopy Positrons Vacancies |
| Title | Spin-Polarized Positron Annihilation Measurement on Ga Vacancies in p-type GaN |
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