On copper diffusion in silicon measured by glow discharge mass spectrometry
Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputteri...
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Published in | Analytical and bioanalytical chemistry Vol. 406; no. 29; pp. 7455 - 7462 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
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Springer Berlin Heidelberg
2014
Springer Springer Nature B.V |
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Abstract | Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 °C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ∼0.5 μm over a total sputtered depth of 8–30 μm. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed. |
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AbstractList | Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 °C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ∼0.5 μm over a total sputtered depth of 8-30 μm. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed. Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 °C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ~0.5 µm over a total sputtered depth of 8-30 µm. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed. Keywords Surface analysis * Mass spectrometry * Trace elements * Glow discharge * Fast diffusers/fast diffusing species Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 °C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ∼0.5 μm over a total sputtered depth of 8–30 μm. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed. Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially at room temperature. The combination of these properties exerts a challenge on the direct analysis of Cu bulk concentration in Si by sputtering techniques like glow discharge mass spectrometry (GDMS). This work aims at addressing the challenges in quantitative analysis of fast diffusing elements in Si matrix by GDMS. N-type, monocrystalline (Czochralski) silicon samples were intentionally contaminated with Cu after solidification and consequently annealed at 900 [degrees]C to ensure a homogeneous distribution of Cu in the bulk. The samples were quenched after annealing to control the extent of the diffusion to the surface prior to the GDMS analyses, which were carried out at different time intervals from within few minutes after cooling onward. The Cu profiles were measured by high-resolution GDMS operating in a continuous direct current mode, where the integration step length was set to ~0.5 mu m over a total sputtered depth of 8-30 mu m. The temperature of the samples during the GDMS analyses was also measured in order to evaluate the diffusion. The Cu contamination of n-type Si samples was observed to be highly material dependent. The practical impact of Cu out-diffusion on the calculation of the relative sensitivity factor (RSF) of Cu in Si is discussed. |
Audience | Academic |
Author | Arnberg, Lars Modanese, Chiara Di Sabatino, Marisa Gaspar, Guilherme |
Author_xml | – sequence: 1 givenname: Chiara surname: Modanese fullname: Modanese, Chiara email: chiara.modanese@ntnu.no organization: Department Materials Science and Engineering, Norwegian University of Science and Technology (NTNU) – sequence: 2 givenname: Guilherme surname: Gaspar fullname: Gaspar, Guilherme organization: Department Materials Science and Engineering, Norwegian University of Science and Technology (NTNU) – sequence: 3 givenname: Lars surname: Arnberg fullname: Arnberg, Lars organization: Department Materials Science and Engineering, Norwegian University of Science and Technology (NTNU) – sequence: 4 givenname: Marisa surname: Di Sabatino fullname: Di Sabatino, Marisa organization: Department Materials Science and Engineering, Norwegian University of Science and Technology (NTNU) |
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BookMark | eNqNkUtr3TAQhUVJaR7tD-imGLrpxumMrIe9DKFtQgPZtGshS6NbB9typWvK_ffVxWkKhULQQoP0ndHRnHN2MseZGHuLcIkA-mMG4KhqQFG3CLKGF-wMFbY1VxJOnmrBT9l5zg8AKFtUr9gplyhUI_UZ-3o_Vy4uC6XKDyGseYhzNcxVHsbBlXIim9dEvuoP1W6MvwqV3Q-bdlRNNucqL-T2KU60T4fX7GWwY6Y3j_sF-_7507frm_ru_svt9dVd7RTqfa2aRnS8IRs63oMLOjjRSi8teqcFOeFDD1IBtNy1vffcad93otFdF3opeHPBPmx9lxR_rpT3ZiqmaBztTHHNBpUUSutGyOegKBosTz0D5Vx2QkNb0Pf_oA9xTXP5symTRY2847pQlxu1syOZYQ5xn6wry9N0nC2FoZxfNV3JggOoIsBN4FLMOVEwSxommw4GwRwDN1vgpgRujoEbKJp3j1bWfiL_pPiTcAH4BuRyNe8o_fX6_66_AcwMtVA |
CitedBy_id | crossref_primary_10_1039_C7JA00055C crossref_primary_10_4139_sfj_69_70 crossref_primary_10_1016_j_solmat_2015_11_047 crossref_primary_10_1039_D0JA00055H crossref_primary_10_1016_j_sab_2017_06_016 crossref_primary_10_1039_C5JA90045J crossref_primary_10_1016_j_egypro_2015_07_084 crossref_primary_10_1016_j_surfcoat_2018_03_044 crossref_primary_10_1007_s00216_018_1324_z crossref_primary_10_1039_C4JA00175C crossref_primary_10_1016_j_mex_2015_10_005 crossref_primary_10_1021_acs_langmuir_2c02467 |
Cites_doi | 10.1016/j.mssp.2004.06.001 10.1002/pip.2264 10.1016/j.measurement.2013.12.024 10.1016/j.egypro.2015.07.084 10.1063/1.120026 10.1016/j.mseb.2012.12.004 10.1063/1.4739470 10.1149/1.1836943 10.1016/j.solmat.2010.04.002 10.1063/1.1827913 10.1016/j.egypro.2012.07.029 10.1016/S0921-5107(99)00514-0 10.1016/j.mseb.2013.10.010 10.1149/1.1421348 10.1016/S0921-5107(02)00735-3 10.1016/j.sab.2011.01.004 10.1063/1.4769809 10.1016/0038-1101(95)98671-O 10.1016/S1003-6326(11)60767-X 10.1007/BF00617708 |
ContentType | Journal Article |
Copyright | Springer-Verlag Berlin Heidelberg 2014 COPYRIGHT 2014 Springer Springer-Verlag Berlin Heidelberg 2014. |
Copyright_xml | – notice: Springer-Verlag Berlin Heidelberg 2014 – notice: COPYRIGHT 2014 Springer – notice: Springer-Verlag Berlin Heidelberg 2014. |
DBID | NPM AAYXX CITATION 3V. 7QF 7QO 7QQ 7SC 7SE 7SP 7SR 7TA 7TB 7U5 7U7 7X7 7XB 88E 8BQ 8FD 8FE 8FG 8FH 8FI 8FJ 8FK ABJCF ABUWG AFKRA AZQEC BBNVY BENPR BGLVJ BHPHI C1K CCPQU D1I DWQXO F28 FR3 FYUFA GHDGH GNUQQ H8D H8G HCIFZ JG9 JQ2 K9. KB. KR7 L7M LK8 L~C L~D M0S M1P M7P P64 PDBOC PQEST PQQKQ PQUKI PRINS 7X8 7SU 7QH 7TV 7UA |
DOI | 10.1007/s00216-014-8105-0 |
DatabaseName | PubMed CrossRef ProQuest Central (Corporate) Aluminium Industry Abstracts Biotechnology Research Abstracts Ceramic Abstracts Computer and Information Systems Abstracts Corrosion Abstracts Electronics & Communications Abstracts Engineered Materials Abstracts Materials Business File Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts Toxicology Abstracts Health & Medical Collection ProQuest Central (purchase pre-March 2016) Medical Database (Alumni Edition) METADEX Technology Research Database ProQuest SciTech Collection ProQuest Technology Collection ProQuest Natural Science Collection Hospital Premium Collection Hospital Premium Collection (Alumni Edition) ProQuest Central (Alumni) (purchase pre-March 2016) Materials Science & Engineering Collection ProQuest Central (Alumni) ProQuest Central ProQuest Central Essentials Biological Science Collection ProQuest Central Technology Collection Natural Science Collection Environmental Sciences and Pollution Management ProQuest One Community College ProQuest Materials Science Collection ProQuest Central Korea ANTE: Abstracts in New Technology & Engineering Engineering Research Database Health Research Premium Collection Health Research Premium Collection (Alumni) ProQuest Central Student Aerospace Database Copper Technical Reference Library SciTech Premium Collection Materials Research Database ProQuest Computer Science Collection ProQuest Health & Medical Complete (Alumni) Materials Science Database Civil Engineering Abstracts Advanced Technologies Database with Aerospace ProQuest Biological Science Collection Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional Health & Medical Collection (Alumni Edition) Medical Database Biological Science Database Biotechnology and BioEngineering Abstracts Materials Science Collection ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Academic ProQuest One Academic UKI Edition ProQuest Central China MEDLINE - Academic Environmental Engineering Abstracts Aqualine Pollution Abstracts Water Resources Abstracts |
DatabaseTitle | PubMed CrossRef Materials Research Database ProQuest Central Student ProQuest Central Essentials ProQuest Computer Science Collection Computer and Information Systems Abstracts SciTech Premium Collection ProQuest Central China Materials Business File Environmental Sciences and Pollution Management Engineered Materials Abstracts Health Research Premium Collection Natural Science Collection Biological Science Collection ProQuest Medical Library (Alumni) ANTE: Abstracts in New Technology & Engineering Aluminium Industry Abstracts ProQuest Biological Science Collection ProQuest One Academic Eastern Edition Electronics & Communications Abstracts ProQuest Hospital Collection ProQuest Technology Collection Health Research Premium Collection (Alumni) Ceramic Abstracts Biological Science Database ProQuest Hospital Collection (Alumni) Biotechnology and BioEngineering Abstracts ProQuest Health & Medical Complete ProQuest One Academic UKI Edition Solid State and Superconductivity Abstracts Engineering Research Database ProQuest One Academic Technology Collection Technology Research Database Computer and Information Systems Abstracts – Academic Mechanical & Transportation Engineering Abstracts Materials Science Collection ProQuest Health & Medical Complete (Alumni) ProQuest Central (Alumni Edition) ProQuest One Community College ProQuest Natural Science Collection ProQuest Central Aerospace Database Copper Technical Reference Library Biotechnology Research Abstracts Health and Medicine Complete (Alumni Edition) ProQuest Central Korea Materials Science Database Advanced Technologies Database with Aerospace ProQuest Materials Science Collection Civil Engineering Abstracts Toxicology Abstracts ProQuest SciTech Collection METADEX Computer and Information Systems Abstracts Professional ProQuest Medical Library Materials Science & Engineering Collection Corrosion Abstracts ProQuest Central (Alumni) MEDLINE - Academic Environmental Engineering Abstracts Pollution Abstracts Aqualine Water Resources Abstracts |
DatabaseTitleList | PubMed Materials Research Database Pollution Abstracts MEDLINE - Academic Materials Research Database |
Database_xml | – sequence: 1 dbid: NPM name: PubMed url: https://proxy.k.utb.cz/login?url=http://www.ncbi.nlm.nih.gov/entrez/query.fcgi?db=PubMed sourceTypes: Index Database – sequence: 2 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Chemistry |
EISSN | 1618-2650 |
EndPage | 7462 |
ExternalDocumentID | A391462006 10_1007_s00216_014_8105_0 25146357 |
Genre | Journal Article |
GroupedDBID | --- -58 -5G -BR -EM -Y2 -~C .86 .VR 06C 06D 0VY 199 1N0 203 23M 2J2 2JN 2JY 2KG 2KM 2LR 2P1 2VQ 2~H 30V 3V. 4.4 406 408 409 40D 40E 53G 5VS 67Z 6NX 78A 7X7 88E 8FE 8FG 8FH 8FI 8FJ 8TC 8UJ 95- 95. 95~ 96X A8Z AAAVM AABHQ AABYN AAFGU AAGCJ AAHNG AAIAL AAIKT AAJKR AANZL AAPBV AARHV AARTL AATNV AATVU AAUCO AAUYE AAWCG AAYFA AAYIU AAYOK AAYQN AAYTO ABBBX ABBXA ABDBF ABDZT ABECU ABFGW ABFTV ABHLI ABHQN ABIPD ABJCF ABJNI ABJOX ABKAS ABKCH ABKTR ABLJU ABMNI ABMQK ABNWP ABPTK ABQBU ABSXP ABTEG ABTHY ABTKH ABTMW ABULA ABUWG ABWNU ABXPI ACBMV ACBRV ACBXY ACBYP ACGFS ACHSB ACHXU ACIGE ACIPQ ACIWK ACKNC ACMDZ ACMLO ACOKC ACOMO ACPRK ACTTH ACVWB ACWMK ADBBV ADHIR ADIMF ADINQ ADJJI ADKNI ADKPE ADMDM ADOXG ADPHR ADRFC ADTPH ADURQ ADYFF ADZKW AEBTG AEEQQ AEFTE AEGAL AEGNC AEJHL AEJRE AEKMD AENEX AEOHA AEPYU AESKC AESTI AETLH AEVLU AEVTX AEXYK AFEXP AFGCZ AFKRA AFLOW AFNRJ AFQWF AFRAH AFWTZ AFZKB AGAYW AGDGC AGGBP AGGDS AGJBK AGMZJ AGQMX AGWIL AGWZB AGYKE AHAVH AHBYD AHIZS AHKAY AHMBA AHSBF AHYZX AIAKS AIIXL AILAN AIMYW AITGF AJBLW AJDOV AJGSW AJRNO AJZVZ AKQUC ALMA_UNASSIGNED_HOLDINGS ALWAN AMKLP AMXSW AMYLF AOCGG ARMRJ ASPBG AVWKF AXYYD AYJHY AZFZN B-. B0M BA0 BBNVY BDATZ BENPR BGLVJ BGNMA BHPHI BPHCQ BVXVI CAG CCPQU COF CS3 CSCUP D1I DDRTE DL5 DNIVK DPUIP EAD EAP EBD EBLON EBS EIOEI EJD EMK EMOBN EPAXT EPL ESBYG ESTFP ESX F5P FEDTE FERAY FFXSO FIGPU FINBP FNLPD FRRFC FSGXE FWDCC FYUFA G-Y G-Z GGCAI GGRSB GJIRD GNWQR GQ6 GQ7 GQ8 GXS HCIFZ HF~ HG5 HG6 HMCUK HMJXF HQYDN HRMNR HVGLF HZ~ H~9 I09 IAO IFM IGS IHE IJ- IKXTQ IMOTQ INH INR ITC ITM IWAJR IXC IZIGR IZQ I~X I~Z J-C J0Z JBSCW JCJTX JZLTJ KB. KDC KOV LAS LK8 LLZTM M1P M4Y M7P MA- ML- N2Q N9A NB0 NDZJH NPVJJ NQJWS NU0 O93 O9G O9I O9J OAM P19 P2P P9N PDBOC PF0 PQQKQ PROAC PSQYO PT4 PT5 QOK QOR QOS R89 R9I RIG RNI RNS ROL RPX RRX RSV RZK S16 S1Z S26 S27 S28 S3B SAP SCLPG SCM SDH SDM SHX SISQX SJYHP SNE SNPRN SNX SOHCF SOJ SPISZ SQXTU SRMVM SSLCW STPWE SV3 SZN T13 T16 TSG TSK TSV TUC TUS U2A U9L UG4 UKHRP UNUBA UOJIU UTJUX UZXMN VC2 VFIZW W23 W48 W4F WH7 WJK WK8 YLTOR Z45 Z5O Z7R Z7S Z7U Z7V Z7W Z7X Z7Y Z7Z Z81 Z82 Z83 Z85 Z86 Z87 Z88 Z8M Z8N Z8O Z8P Z8Q Z8R Z8S Z8T Z8U Z8V Z8W Z8Z Z91 Z92 ZMTXR ~8M ~KM 0R~ AAEOY AAJBT AASML ABAKF ACAOD ACDTI ACZOJ AEFQL AEMSY AFBBN AGQEE AGRTI AIGIU NPM AACDK AAHBH AAYXX AGJZZ ALIPV CITATION H13 7QF 7QO 7QQ 7SC 7SE 7SP 7SR 7TA 7TB 7U5 7U7 7XB 8BQ 8FD 8FK AZQEC C1K DWQXO F28 FR3 GNUQQ H8D H8G JG9 JQ2 K9. KR7 L7M L~C L~D P64 PQEST PQUKI PRINS 7X8 7SU 7QH 7TV 7UA |
ID | FETCH-LOGICAL-c617t-6334923eaf92b0cf7fc485d5a1dc74ec4dfb0560082c8bdd2c7db943799fb5423 |
IEDL.DBID | BENPR |
ISSN | 1618-2642 |
IngestDate | Fri Aug 16 22:05:55 EDT 2024 Fri Aug 16 05:20:44 EDT 2024 Fri Aug 16 07:43:05 EDT 2024 Fri Sep 13 03:51:00 EDT 2024 Fri Feb 02 04:25:53 EST 2024 Thu Sep 12 17:18:56 EDT 2024 Thu May 23 23:19:02 EDT 2024 Sat Dec 16 12:01:34 EST 2023 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 29 |
Keywords | Fast diffusers/fast diffusing species Trace elements Surface analysis Mass spectrometry Glow discharge |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c617t-6334923eaf92b0cf7fc485d5a1dc74ec4dfb0560082c8bdd2c7db943799fb5423 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
PMID | 25146357 |
PQID | 2511712927 |
PQPubID | 2034506 |
PageCount | 8 |
ParticipantIDs | proquest_miscellaneous_1654677345 proquest_miscellaneous_1651431082 proquest_miscellaneous_1622594708 proquest_journals_2511712927 gale_infotracacademiconefile_A391462006 crossref_primary_10_1007_s00216_014_8105_0 pubmed_primary_25146357 springer_journals_10_1007_s00216_014_8105_0 |
PublicationCentury | 2000 |
PublicationDate | 11-2014 |
PublicationDateYYYYMMDD | 2014-01-01 |
PublicationDate_xml | – year: 2014 text: 11-2014 |
PublicationDecade | 2010 |
PublicationPlace | Berlin/Heidelberg |
PublicationPlace_xml | – name: Berlin/Heidelberg – name: Germany – name: Heidelberg |
PublicationTitle | Analytical and bioanalytical chemistry |
PublicationTitleAbbrev | Anal Bioanal Chem |
PublicationTitleAlternate | Anal Bioanal Chem |
PublicationYear | 2014 |
Publisher | Springer Berlin Heidelberg Springer Springer Nature B.V |
Publisher_xml | – name: Springer Berlin Heidelberg – name: Springer – name: Springer Nature B.V |
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SSID | ssj0015816 |
Score | 2.1996741 |
Snippet | Copper contamination occurs frequently in silicon for photovoltaic applications due to its very fast diffusion coupled with a low solid solubility, especially... |
SourceID | proquest gale crossref pubmed springer |
SourceType | Aggregation Database Index Database Publisher |
StartPage | 7455 |
SubjectTerms | Analysis Analytical Chemistry Annealing Biochemistry Characterization and Evaluation of Materials Chemical properties Chemistry Chemistry and Materials Science Contamination Copper Copper compounds Diffusion Diffusion rate Direct current Emerging Concepts and Strategies in Analytical Glow Discharges Food Science Glow discharges Laboratory Medicine Mass spectrometry Mass spectroscopy Mathematical analysis Monitoring/Environmental Analysis Photovoltaics Research Paper Room temperature Scientific imaging Silicon Solid solubility Solidification Spectroscopy |
SummonAdditionalLinks | – databaseName: SpringerLINK - Czech Republic Consortium dbid: AGYKE link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1LSyQxEC50POjF5-7avsjCgqD0MNOddDrHQXyg7HpZQU-hk3QvovYMMz2I_nqr-uX6BM8d0qmkkvpSlfoK4FcSRgYNa893aGx9tFDOV5GSfpRRUCxBSKAod_j3n-jkgp9eissZCFrXRX7TbSKS5UHd5rqRNaLLL_fjPj04m4U5QVWpOzA3OL46O2xjByIuC54SEzy93wqaWOZ7nbywRq_P5P-M0qsoaWl8jpaqhMBJyVlIb05uutPCdO3jW0bHL8i1DIs1FmWDSnlWYCbNV2H-oCkBtwZn5zmzw9EoHTMqpDIlzxq7ztnk-hYVKGd3lYPRMfPA_t0O7xnl-BL1UsruEJSzMo2T-BCwt29wcXT49-DEr6sv-BZRTeFHIREXhmmSqcD0bCYzy2PhRNJ3VvLUcpeZHuGlOLCxcS6w0hlF9IYqMwJR2nfo5MM8XQeGsI5LYn6RiAgiaWMRJ0HGrRAZD50yHuw1q6BHFcmGbumUy_nROD-a5kf3PNilddK0AYtxYpM6jwB_RVRWehAq1ArylHiw1SylrnfmRNOVSiLICaQHP9vPOK8UKEnydDid6H6Ep5zCIceftSGo2UfpP22D4sqQCw9-VKrUyofj4MQF6MF-oxfPg_xQ-I0vtd6EhYAUq_QYbUGnGE_TbcRQhdmpN80TH90OLA priority: 102 providerName: Springer Nature |
Title | On copper diffusion in silicon measured by glow discharge mass spectrometry |
URI | https://link.springer.com/article/10.1007/s00216-014-8105-0 https://www.ncbi.nlm.nih.gov/pubmed/25146357 https://www.proquest.com/docview/2511712927/abstract/ https://search.proquest.com/docview/1622594708 https://search.proquest.com/docview/1651431082 https://search.proquest.com/docview/1654677345 |
Volume | 406 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fa9swED7a5mF7Ket-uu2CBoPBhqkty5b0NJIuaVhZN8YC2ZOwJHsUWjttEsb--905dtoVlpfkwSbRnc53n-903wG8zZPMYmCNQo_BNsQI5UOdaRlmJRXFcoQEmnqHv1xkk6n4PEtnOzDpemHoWGXnExtH7WtHOfITgsISgxO-queWsgBuefJxfhPS_Ciqs7bDNHahx2NBBdvecHTx7fumopCqZgwq8cPTqS7eVTijhlCUx_ReLUIV01m2f2LUQ099L1Q9qJ02IWn8BPZbLMkG680_gJ2iegqPTrsRbs_g_GvFXD2fF7eMBqGsKDPGLiu2uLxCA6jY9TpB6Jn9w35d1b8Z9egSdVLBrhFUs6YNk_gM8Neew3Q8-nE6CdvpCaFDVLIMs4SIB5MiLzW3kStl6YRKfZrH3klROOFLGxHeUdwp6z130ltN9IS6tCmirBewV9VV8QoYwjIhiblFYkTPpFOpynkpXJqWIvHaBvC-05eZr0kyzIYOuVGuQeUaUq6JAnhHGjX0ANE25m0fAP4VUVGZQaLRe1OmI4DjTummfbIW5s4OAnizuYx6pUJHXhX1amHiDL2UxiWrbfcQVIxR-q33oLgyEWkAL9ebvpEP1yGIyy-AD50V3C3yv8IfbhfpCB5zMsMmxXMMe8vbVfEaQc_S9mFXziR-qvFZH3qD4afhmL7Pfp6P-q2t49UpH_wF3LUAxQ |
link.rule.ids | 315,786,790,12083,12792,21416,27957,27958,31754,31755,33408,33409,33779,33780,41116,41558,42185,42627,43345,43635,43840,52146,52269,74102,74392,74659 |
linkProvider | ProQuest |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1La9wwEB7yOGwupU3T1uk2UaBQSBD1Q7asU1lCwuax28sG9iYsyQ6BxN7sg5B_3xmvvXlA92xha0bSzOeZ0TcAP7MoMehYfe7Q2XL0UI6rREmeFJQUyxASKLo7PBgm_RtxOY7HTcBt1pRVtjaxNtSushQj_01QWKJzCuWfySOnrlGUXW1aaGzCtogiQSV9crz64QritG59SpzwVMkVtllNvyYRDQP6lxY8Dah-7Y1fem-dX7mnd_nS2g2df4QPDX5kveWCf4KNvNyFzmnbtu0zXP0tma0mk3zKqPnJgqJh7K5ks7t7XPSSPSyDgo6ZZ3Z7Xz0xupdLdEk5e0Agzeqrl8RhgG_bg5vzs9FpnzcdE7hFJDLnSURkg1GeFSo0vi1kYUUauzgLnJUit8IVxieMk4Y2Nc6FVjqjiJJQFSZGZPUFtsqqzL8BQygmJLG1SPTiibRpnGZhIWwcFyJyynhw3OpLT5bEGHpFgVwrV6NyNSlX-x78Io1qOjTzaWazpvYfP0X0U7oXKbTYFN3woNsqXTenaaZf1t6Do9Vj1CslN7IyrxYzHSRomRROOV03huBhgNKvHYPiStxMHnxdLvpKPpyHIP4-D07aXfAyyf8Kv79epEPo9EeDa319Mbz6Djshbck6xNOFrfl0kf9A0DM3B_XO_geW_vjH |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3db9QwDLfgkGAviAGDwrFl0qRJoIh-JE3zhKbBaWMf8LBJ9xY1SYMmbe3tPoT477F77Q0m7Z5btbHr2r_Yzs8Ae2WWWwysMfcYbDlGKM91rhXPAxXFSoQEms4On53nR5fi-1iOu_6nWddW2fvE1lH7xlGO_DNBYYXBCbfqoWuL-Pl19GVyy2mCFFVau3Eaj-EJRsmYphmo8WrzlciiHYNK_PDU1ZX2Fc64JRRNE9pXC14k1Mv2X4y676n_CVX3aqdtSBq9gOcdlmQHy4-_CY-q-iU8O-xHuL2Ckx81c81kUk0ZDUJZUGaMXdVsdnWNBlCzm2WC0DP7h_26bn4zOqNL1EkVu0FQzdpjmMRngE97DZejbxeHR7ybnsAdopI5zzMiHsyqMujUxi6o4EQhvSwT75SonPDBxoR3itQV1vvUKW810RPqYCWirC0Y1E1dvQWGsEwoYm5RGNFz5QpZlGkQTsogMq9tBB97fZnJkiTDrOiQW-UaVK4h5Zo4gn3SqKEfaD4tXdmdA8BXERWVOcg0em_KdEQw7JVuuj9rZu7sIILd1WXUKxU6yrpqFjOT5OilNC65WHcPQcUEpV97D4qrMiEjeLP86Cv5cB2CuPwi-NRbwd0iHxT-3XqRduApGrU5PT4_eQ8bKVlkm-0ZwmA-XVQfEP_M7XZr2H8BdJL88w |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=On+copper+diffusion+in+silicon+measured+by+glow+discharge+mass+spectrometry&rft.jtitle=Analytical+and+bioanalytical+chemistry&rft.au=Modanese%2C+Chiara&rft.au=Gaspar%2C+Guilherme&rft.au=Arnberg%2C+Lars&rft.au=Sabatino%2C+Marisa+Di&rft.date=2014-01-01&rft.pub=Springer&rft.issn=1618-2642&rft.eissn=1618-2650&rft.volume=406&rft.issue=29&rft.spage=7455&rft_id=info:doi/10.1007%2Fs00216-014-8105-0&rft.externalDocID=A391462006 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1618-2642&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1618-2642&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1618-2642&client=summon |