Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process - 王艳蓉 杨红 徐昊 王晓磊 罗维春 祁路伟 张淑祥 王文武 闫江 朱慧珑 赵超 陈大鹏 叶甜春 (Chinese physics B, 2015)
Keywords: Annealing; Deposition; Dielectric breakdown; Equivalence; Gates; Leakage current; MOSFET; MOSFETs; Oxides; PMOS; 时间依赖性; 沉积; 电击穿特性; 等效氧化层厚度; 退火技术; 金属栅