Atomic mechanism of strong interactions at the graphene/sapphire interface

• Published in: Nature communications Vol. 10; no. 1; pp. 5013 - 5
• Main Authors: Dou, Zhipeng, Chen, Zhaolong, Li, Ning, Yang, Shenyuan, Yu, Zhiwei, Sun, Yuanwei, Li, Yuehui, Liu, Bingyao, Luo, Qiang, Ma, Tianbao, Liao, Lei, Liu, Zhongfan, Gao, Peng
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.11.2019; Nature Publishing Group; Nature Portfolio
• Subjects: 140/133; 140/146; 147/143; 147/3; 639/301/357/1018; 639/301/357/918; 639/766/119/544; Electronic devices; Electronic equipment; Epitaxial growth; Film growth; Graphene; High temperature; Humanities and Social Sciences; multidisciplinary; Remote control; Sapphire; Science; Science (multidisciplinary); Strong interactions (field theory); Substrates; Thin films; Two dimensional materials
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/s41467-019-13023-6

For atomically thin two-dimensional materials, interfacial effects may dominate the entire response of devices, because most of the atoms are in the interface/surface. Graphene/sapphire has great application in electronic devices and semiconductor thin-film growth, but the nature of this interface i...