Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates
Multilayer hexagonal boron nitride ( h -BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h -BN in large areas is still limited in terms of crystallinity, thickness an...
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Published in | Nature communications Vol. 11; no. 1; pp. 849 - 8 |
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Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
12.02.2020
Nature Publishing Group Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | Multilayer hexagonal boron nitride (
h
-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer
h
-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor–liquid–solid growth (VLSG) method to achieve uniform multilayer
h
-BN by using a molten Fe
82
B
18
alloy and N
2
as reactants. Liquid Fe
82
B
18
not only supplies boron but also continuously dissociates nitrogen atoms from the N
2
vapor to support direct
h
-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality
h
-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the
h
-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.
Multilayer hexagonal boron nitride (hBN) is a desirable dielectric substrate for 2D electronics but its controllable synthesis is challenging. Here, the authors report a vapor–liquid–solid growth method to achieve uniform multilayer hBN by using a molten Fe
82
B
18
alloy and N
2
as reactants. |
---|---|
Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
ISSN: | 2041-1723 2041-1723 |
DOI: | 10.1038/s41467-020-14596-3 |