320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器
报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10~（10） cmHz~（1/2）W~（-1）,盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~...
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| Published in | 红外与毫米波学报 Vol. 34; no. 6; pp. 716 - 720 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海,200083
2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.11972/j.issn.1001-9014.2015.06.015 |
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| Abstract | 报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10~（10） cmHz~（1/2）W~（-1）,盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz~（1/2）W~（-1）,盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像. |
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| AbstractList | 报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50%响应截止波长分别为4.2μm和5.5μm,其中N-on-P器件平均峰值探测率达到6.0×10~（10） cmHz~（1/2）W~（-1）,盲元率为8.6%;P-on-N器件平均峰值探测率达到2.3×10~9 cmHz~（1/2）W~（-1）,盲元率为9.8%.红外焦平面偏压调节成像测试得到较为清晰的双波段成像. TN304.2%TN305; 报道了320×256元InAs/GaSb Ⅱ类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超品格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML GaSb.焦平面阵列像元中心距为30μm.在77 K时测试,器件双色波段的50％响应截止波长分别为4.2 μm和5.5 μm,其中N-on-P器件平均峰值探测率达到6.0×10m cmHz1/2W-1,盲元率为8.6％;P-on-N器件平均峰值探测率达到2.3×109 cmHz1/2W-1,盲元率为9.8％.红外焦平面偏压调节成像测试得到较为清晰的双波段成像. |
| Author | 白治中 徐志成 周易 姚华城 陈洪雷 陈建新 丁瑞军 何力 |
| AuthorAffiliation | 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海200083 |
| AuthorAffiliation_xml | – name: 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海,200083 |
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| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.11972/j.issn.1001-9014.2015.06.015 |
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| DocumentTitleAlternate | 320 × 256 dual-color mid-wavelength infrared InAs /GaSb superlattice focal plane arrays |
| DocumentTitle_FL | 320 × 256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays |
| EndPage | 720 |
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| Issue | 6 |
| Keywords | 焦平面 superlattice double-color focal plane array 超晶格 双色 InAs/GaSb |
| Language | Chinese |
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| Notes | BAI Zhi-Zhong, XU Zhi-Cheng, ZHOU Yi, YAO Hua-Cheng, CHEN Hong-Lei, CHEN Jian-Xin, DING Rui-Jun, HE Li （ Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China） In this paper,we report research results of 256 × 256 dual-color mid-wavelength infrared InAs /GaSb superlattice focal plane arrays. The detector structure is PN-NP epitaxial multilayer and the signal is read out by sequential mode. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy（ MBE） technology. The respective structure of each absorption region are7ML（ InAs） /7ML（ GaSb） and 10ML（ InAs） /10ML（ GaSb）. The pixel center distance of the detector is 30μm. At 77 K measurement,the detector has 50% cut-off wavelength of 4. 2 μm and 5. 5μm respectively; The N-on-P detector has a peak detectivity of 6. 0 × 10~（10） cmHz~（1/2）W~（-1） and dead pixels rate of 8. 6%; The P-on-N detector has a peak detectivity of 2. 3 × 10~9 cmHz~（1/2）W |
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| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2015 |
| Publisher | 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海,200083 |
| Publisher_xml | – name: 中国科学院上海技术物理研究所中国科学院红外成像材料与器件重点实验室,上海,200083 |
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| Snippet | 报道了320×256元InAs/GaSb II类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超晶格周期结构分别为7 ML InAs/7 ML GaSb和10 ML InAs/10 ML... TN304.2%TN305; 报道了320×256元InAs/GaSb Ⅱ类超晶格红外双色焦平面阵列探测器的初步结果.探测器采用PN-NP叠层双色外延结构,信号提取采用顺序读出方式.运用分子束外延技术在GaSb衬底上生长超晶格材料,双波段红外吸收区的超品格周期结构分别为7 ML InAs/7 ML GaSb和10... |
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| StartPage | 716 |
| SubjectTerms | InAs/GaSb 双色 焦平面 超晶格 |
| Title | 320×256元InAs/GaSb II类超晶格中波红外双色焦平面探测器 |
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