利用椭偏仪研究氢气退火处理对ZnO-Ga薄膜光学性能的影响

通过溶胶凝胶技术制备了不同Ga掺杂含量的Zn O透明导电薄膜,研究了Ga掺杂对GZO薄膜结构、电学及光学性能的影响.从X射线衍射光谱分析,所有薄膜均表现为六方纤锌矿结构,经过氢气退火处理之后,薄膜的电学性能均得到提高,当Ga掺杂含量为5 at%时,得到薄膜的电阻率为3.410×10^-3Ω·cm.利用可变入射角椭圆偏振光谱仪（VASE）在270-1 600 nm波长范围内研究了GZO薄膜折射率和消光系数的变化,采用双振子模型对实验数据进行拟合....

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Bibliographic Details
Published in红外与毫米波学报 Vol. 35; no. 1; pp. 6 - 10
Main Author 杨娇 高美珍
Format Journal Article
LanguageChinese
Published 兰州大学物理科学与技术学院磁学与磁性材料教育部重点实验室,甘肃兰州,730000 2016
Subjects
GZO薄膜
双振子模型
椭圆偏振光谱仪
氢处理
椭圆偏振光谱仪
spectroscopic ellipsometry
双振子模型
氢处理
GZO薄膜
GZO thin film
double oscillator model
hydrogen treatment
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Summary:通过溶胶凝胶技术制备了不同Ga掺杂含量的Zn O透明导电薄膜,研究了Ga掺杂对GZO薄膜结构、电学及光学性能的影响.从X射线衍射光谱分析,所有薄膜均表现为六方纤锌矿结构,经过氢气退火处理之后,薄膜的电学性能均得到提高,当Ga掺杂含量为5 at%时,得到薄膜的电阻率为3.410×10^-3Ω·cm.利用可变入射角椭圆偏振光谱仪（VASE）在270-1 600 nm波长范围内研究了GZO薄膜折射率和消光系数的变化,采用双振子模型对实验数据进行拟合.
Bibliography:31-1577/TN
GZO thin film; hydrogen treatment; spectroscopic ellipsometry; double oscillator model
The effects of Ga doping on structural,electrical,and optical properties of hydrogenated Zn O-Ga（ GZO） thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations,the films doped with different gallium concentrations were found to be pure wurtzite-structured Zn O. The electrical properties of the hydrogen-annealed films were improved and a lowest resistivity of 3. 410 × 10^-3Ω·cm was obtained. The refractive index and extinction coefficient of Zn O-Ga thin films were determined in the range of 270 -1600 nm by varying angle spectroscopic ellipsometry（ VASE）. The simulation was carried out using a double oscillator model,which includes the Psemi-M O equation and the rho-tau Drude equation.
YANG Jiao, GAO Mei-Zhen （ Key Lab for Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China）
ISSN:1001-9014
DOI:10.11972/j.issn.1001-9014.2016.01.002