基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器
基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平....
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| Published in | 红外与毫米波学报 Vol. 34; no. 1; pp. 6 - 9 |
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| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016
2015
南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2015.00006 |
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| Summary: | 基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平. |
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| Bibliography: | A 190 ~ 225 GHz high multiplying efficiency frequency doubler was developed with discrete Ga As planar Schottky diode. The 50 μm thick quartz circuit substrate is flip-chip m ounted for diode therm al dissipation,as well as RF signals and DC grounding effectively. Diode em bedding im pedances were calculated by full-wave analysis with lum ped port to represent the nonlinear junction for circuit m atching. The doubler is self-biasing and fix-tuned. The highest efficiency of 9. 6% and corresponding output power of 8. 25 m W were obtained at202 GHz with pum ping power of 85. 5 m W. The typical tested efficiency is 7. 5% in 190 ~ 225 GHz. The m ultiplying efficiency features flat and broadband operation. The doubler reaches the state-of-the-art perform ance reported worldwide. YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, KOU Ya-Nan （1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China; 2. Department of Microwave and Millimeter W |
| ISSN: | 1001-9014 |
| DOI: | 10.3724/SP.J.1010.2015.00006 |