基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器
基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平....
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| Published in | 红外与毫米波学报 Vol. 34; no. 1; pp. 6 - 9 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016
2015
南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2015.00006 |
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| Abstract | 基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平. |
|---|---|
| AbstractList | 基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平. TN773.2; 基于分立式GaAs肖特基势垒二极管,研制出了190～225 GHz高效率二倍频器.50 μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6％,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190～225 GHz,测得倍频效率典型值为7.5％;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平. |
| Author | 姚常飞 周明 罗运生 寇亚男 |
| AuthorAffiliation | 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016 |
| AuthorAffiliation_xml | – name: 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016;南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016 |
| Author_FL | ZHOU Ming KOU Ya-Nan LUO Yun-Sheng YAO Chang-Fei |
| Author_FL_xml | – sequence: 1 fullname: YAO Chang-Fei – sequence: 2 fullname: ZHOU Ming – sequence: 3 fullname: LUO Yun-Sheng – sequence: 4 fullname: KOU Ya-Nan |
| Author_xml | – sequence: 1 fullname: 姚常飞 周明 罗运生 寇亚男 |
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| ClassificationCodes | TN773.2 |
| ContentType | Journal Article |
| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.3724/SP.J.1010.2015.00006 |
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| DocumentTitleAlternate | A 190～225 GHz high efficiency Schottky diode doubler with circuit substrate flip-chip mounted |
| DocumentTitle_FL | A 190 ～ 225 GHz high efficiency Schottky diode doubler with circuit substrate flip-chip mounted |
| EndPage | 9 |
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| Keywords | efficiency 效率 terahertz 太赫兹 GaAs Schottky diode frequency doubler 二倍频器 GaAs肖特基二极管 |
| Language | Chinese |
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| Notes | A 190 ~ 225 GHz high multiplying efficiency frequency doubler was developed with discrete Ga As planar Schottky diode. The 50 μm thick quartz circuit substrate is flip-chip m ounted for diode therm al dissipation,as well as RF signals and DC grounding effectively. Diode em bedding im pedances were calculated by full-wave analysis with lum ped port to represent the nonlinear junction for circuit m atching. The doubler is self-biasing and fix-tuned. The highest efficiency of 9. 6% and corresponding output power of 8. 25 m W were obtained at202 GHz with pum ping power of 85. 5 m W. The typical tested efficiency is 7. 5% in 190 ~ 225 GHz. The m ultiplying efficiency features flat and broadband operation. The doubler reaches the state-of-the-art perform ance reported worldwide. YAO Chang-Fei, ZHOU Ming, LUO Yun-Sheng, KOU Ya-Nan （1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China; 2. Department of Microwave and Millimeter W |
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| PublicationDecade | 2010 |
| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2015 |
| Publisher | 南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016%南京电子器件研究所微波毫米波模块电路事业部,江苏南京,210016 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室,江苏南京210016 |
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| Snippet | 基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202... TN773.2; 基于分立式GaAs肖特基势垒二极管,研制出了190～225 GHz高效率二倍频器.50 μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202... |
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| StartPage | 6 |
| SubjectTerms | GaAs肖特基二极管 二倍频器 太赫兹 效率 |
| Title | 基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器 |
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