Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface

• Published in: Proceedings of the National Academy of Sciences - PNAS Vol. 111; no. 40; pp. 14378 - 14381
• Main Authors: Zhou, Miao, Ming, Wenmei, Liu, Zheng, Wang, Zhengfei, Li, Ping, Liu, Feng
• Format: Journal Article
• Language: English
• Published: United States National Academy of Sciences 07.10.2014; National Acad Sciences
• Subjects: ambient temperature; Atoms; Energy; Energy gaps; Graphene; Heavy metals; Kinetics; Mathematical surfaces; Mathematical triviality; Orbitals; Particle spin; Physical Sciences; Quantum theory; Semiconductors; silicon; Topology

Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles cal...