Rashba effect modulation in two-dimensional A 2 B 2 Te 6 (A = Sb and Bi; B = Si and Ge) materials via charge transfer
Designing two-dimensional (2D) Rashba semiconductors, exploring the underlying mechanism of the Rashba effect, and further proposing efficient and controllable approaches are crucial for the development of spintronics. On the basis of first-principles calculations, we here theoretically designed all...
Saved in:
Published in | Nanoscale Vol. 17; no. 29; pp. 17247 - 17255 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
England
24.07.2025
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!