Rashba effect modulation in two-dimensional A 2 B 2 Te 6 (A = Sb and Bi; B = Si and Ge) materials via charge transfer

Designing two-dimensional (2D) Rashba semiconductors, exploring the underlying mechanism of the Rashba effect, and further proposing efficient and controllable approaches are crucial for the development of spintronics. On the basis of first-principles calculations, we here theoretically designed all...

Full description

Saved in:
Bibliographic Details
Published inNanoscale Vol. 17; no. 29; pp. 17247 - 17255
Main Authors Wu, Haipeng, Tian, Qikun, Wei, Jinghui, Xing, Ziyu, Qin, Guangzhao, Qin, Zhenzhen
Format Journal Article
LanguageEnglish
Published England 24.07.2025
Online AccessGet full text

Cover

Loading…