半导体薄片激光器窗口散热模式的热效应
基于垂直外腔面发射半导体激光器窗口散热模式的传热模型，用有限元法计算了不同条件下量子阱有源区的温度变化，建立了量子阱最高温度的等效热阻模型和计算公式，并通过拟合确定了热阻模型的相关参数．计算表明量子阱最高温度与抽运功率存在线性关系，与光斑面积近反比关系，窗口散热片可显著降低量子阱有源区温度和温度的不均匀度．等效热阻模型表明由于半导体晶片内热流在径向难以扩散，热传导中存在较大串联热阻，使得散热片热扩散能力趋于饱和，其中碳化硅的散热性能约为金刚石的75％．...
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| Published in | 红外与毫米波学报 Vol. 33; no. 3; pp. 272 - 277 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
重庆市高校光学工程重点实验室,重庆401331%重庆大学光电技术及系统教育部重点实验室,重庆,400030%重庆师范大学物理与电子工程学院,重庆401331
2014
重庆师范大学物理与电子工程学院,重庆401331 重庆市高校光学工程重点实验室,重庆401331 重庆大学光电技术及系统教育部重点实验室,重庆400030 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2014.00272 |
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| Abstract | 基于垂直外腔面发射半导体激光器窗口散热模式的传热模型，用有限元法计算了不同条件下量子阱有源区的温度变化，建立了量子阱最高温度的等效热阻模型和计算公式，并通过拟合确定了热阻模型的相关参数．计算表明量子阱最高温度与抽运功率存在线性关系，与光斑面积近反比关系，窗口散热片可显著降低量子阱有源区温度和温度的不均匀度．等效热阻模型表明由于半导体晶片内热流在径向难以扩散，热传导中存在较大串联热阻，使得散热片热扩散能力趋于饱和，其中碳化硅的散热性能约为金刚石的75％． |
|---|---|
| AbstractList | 基于垂直外腔面发射半导体激光器窗口散热模式的传热模型，用有限元法计算了不同条件下量子阱有源区的温度变化，建立了量子阱最高温度的等效热阻模型和计算公式，并通过拟合确定了热阻模型的相关参数．计算表明量子阱最高温度与抽运功率存在线性关系，与光斑面积近反比关系，窗口散热片可显著降低量子阱有源区温度和温度的不均匀度．等效热阻模型表明由于半导体晶片内热流在径向难以扩散，热传导中存在较大串联热阻，使得散热片热扩散能力趋于饱和，其中碳化硅的散热性能约为金刚石的75％． TN248.4; 基于垂直外腔面发射半导体激光器窗口散热模式的传热模型,用有限元法计算了不同条件下量子阱有源区的温度变化,建立了量子阱最高温度的等效热阻模型和计算公式,并通过拟合确定了热阻模型的相关参数.计算表明量子阱最高温度与抽运功率存在线性关系,与光斑面积近反比关系,窗口散热片可显著降低量子阱有源区温度和温度的不均匀度.等效热阻模型表明由于半导体晶片内热流在径向难以扩散,热传导中存在较大串联热阻,使得散热片热扩散能力趋于饱和,其中碳化硅的散热性能约为金刚石的75％. |
| Author | 朱仁江 潘英俊 张鹏 戴特力 范嗣强 梁一平 |
| AuthorAffiliation | 重庆大学光电技术及系统教育部重点实验室,重庆400030 重庆师范大学物理与电子工程学院,重庆401331 重庆市高校光学工程重点实验室,重庆401331 |
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| Author_FL | ZHU Ren-Jiang PAN Ying-Jun FAN Si-Qiang LIANG Yi-Ping ZHANG Peng DAI Te-Li |
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| ClassificationCodes | TN248.4 |
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| DOI | 10.3724/SP.J.1010.2014.00272 |
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| DocumentTitleAlternate | Numerical analysis of thermal effects in semiconductor disk laser with heatspreader |
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| EndPage | 277 |
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| Keywords | 半导体薄片激光器 热阻 thermal resistance heatspreader thermal effects 散热片 semiconductor disk laser 热效应 |
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| Notes | semiconductor disk laser, thermal effects, thermal resistance, heatspreader ZHU Ren-Jiang, PAN Ying-Jun, ZHANG Peng , DAI Te-Li,FAN Si-Qiang , LIANG Yi-Ping （1. Key Laboratory of Opto-Electronic Technology ＆ System, Ministry of Education, Chongqing University, Chongqing 400030, China; 2. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China; 3. Chongqing Key Laboratory of Optical Engineering, Chongqing Normal University, Chongqing 401331, China） 31-1577/TN Based on the heat transfer model of vertical external cavity surface emitting semiconductor laser with heatspreader, the change in temperature of the quantum well active region has been calculated under different conditions with the finite element method. The equivalent thermal resistance model has been proposed and calculation formula has been derived for the maximum temperature of quantum well, the parameters of which are determined by fitting curves. The calculation shows that the maximum temperature of the quan |
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| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2014 |
| Publisher | 重庆市高校光学工程重点实验室,重庆401331%重庆大学光电技术及系统教育部重点实验室,重庆,400030%重庆师范大学物理与电子工程学院,重庆401331 重庆师范大学物理与电子工程学院,重庆401331 重庆市高校光学工程重点实验室,重庆401331 重庆大学光电技术及系统教育部重点实验室,重庆400030 |
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| SubjectTerms | 半导体薄片激光器 散热片 热效应 热阻 |
| Title | 半导体薄片激光器窗口散热模式的热效应 |
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