InP衬底上晶格匹配四元系InAlGaAs的气态源分子束外延生长
采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In—AlGaAs材料性质进行了表征。摇摆曲线结果表明，根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配．光致发光和霍尔测试结果显示随着Al组分的增加，样品的光致发光强度、电子浓度和迁移率均有所下降．样品的三族元素组分由光致发光及X射线衍射实验获得，测试结果与设计值吻合，Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法．...
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| Published in | 红外与毫米波学报 Vol. 31; no. 5; pp. 385 - 388 |
|---|---|
| Main Author | |
| Format | Journal Article |
| Language | Chinese |
| Published |
中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050
2012
中国科学院研究生院,北京100049%中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 中国科学院红外成像材料与器件重点实验室,上海200083%中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050 |
| Subjects | |
| Online Access | Get full text |
| ISSN | 1001-9014 |
| DOI | 10.3724/SP.J.1010.2012.00385 |
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| Abstract | 采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In—AlGaAs材料性质进行了表征。摇摆曲线结果表明，根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配．光致发光和霍尔测试结果显示随着Al组分的增加，样品的光致发光强度、电子浓度和迁移率均有所下降．样品的三族元素组分由光致发光及X射线衍射实验获得，测试结果与设计值吻合，Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法． |
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| AbstractList | TN2; 采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系InAlGaAs材料性质进行了表征.摇摆曲线结果表明,根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配.光致发光和霍尔测试结果显示随着Al组分的增加,样品的光致发光强度、电子浓度和迁移率均有所下降.样品的三族元素组分由光致发光及X射线衍射实验获得,测试结果与设计值吻合,Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法. 采用高分辨率X射线衍射摇摆曲线、光致发光以及霍尔测试对采用气态源分子束外延方法生长的四元系In—AlGaAs材料性质进行了表征。摇摆曲线结果表明，根据计算数据所生长的InAlGaAs样品与InP衬底基本匹配．光致发光和霍尔测试结果显示随着Al组分的增加，样品的光致发光强度、电子浓度和迁移率均有所下降．样品的三族元素组分由光致发光及X射线衍射实验获得，测试结果与设计值吻合，Al组分的实验设计值与测试结果的关系提供了一种实用的精确控制组分的方法． |
| Author | 王凯 顾溢 方祥 周立 李成 李好斯白音 张永刚 |
| AuthorAffiliation | 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 中国科学院研究生院,北京100049 中国科学院红外成像材料与器件重点实验室,上海200083 |
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| Author_FL | FANG Xiang ZHANG Yong-Gang LI Hao-Si-Bai-Yin ZHOU Li LI Cheng WANG Kai GU Yi |
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| Copyright | Copyright © Wanfang Data Co. Ltd. All Rights Reserved. |
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| DOI | 10.3724/SP.J.1010.2012.00385 |
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| DocumentTitleAlternate | Properties of lattice matched quaternary InAIGaAs on InP substrate grown by gas source MBE |
| DocumentTitle_FL | Properties of lattice matched quaternary InAlGaAs on InP substrate grown by gas source MBE |
| EndPage | 388 |
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| Keywords | molecular beam epitaxy X射线衍射 photoluminescence 光致发光 分子束外延 X-ray diffraction 化合物半导体 compound semiconductor InAlGaAs |
| Language | Chinese |
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| Notes | 31-1577/TN Properties of quaternary InAlGaAs alloys prepared by gas source MBE growth have been investigated with high resolution X-ray diffraction rocking curves, photoluminescence and Hall measurements. X-ray rocking curves show that all the samples are well matched to InP substrate according to calibration data. The photoluminescence and Hall measurement show that the PL intensity, electron concentration and mobility decrease distinctly as Al composition increases. The group III compositions are determined from both photoluminescence and x-ray diffraction measurements, and agreed well with the designed values. The relationship between the designed Al compositions and measured values provides us a practical way for the precise composition control. WANG Kai, GU Yi, FANG Xiang, ZHOU Li, LI Cheng, LI Hao-Si-Bai-Yin , ZHANG Yong-Gang （ 1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China; |
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| PublicationTitle | 红外与毫米波学报 |
| PublicationTitleAlternate | Journal of Infrared and Millimeter Waves |
| PublicationTitle_FL | Journal of Infrared and Millimeter Waves |
| PublicationYear | 2012 |
| Publisher | 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 中国科学院研究生院,北京100049%中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 中国科学院红外成像材料与器件重点实验室,上海200083%中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050 |
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| SubjectTerms | InAlGaAs X射线衍射 光致发光 分子束外延 化合物半导体 |
| Title | InP衬底上晶格匹配四元系InAlGaAs的气态源分子束外延生长 |
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