Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches
Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on...
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| Published in | Nature communications Vol. 8; no. 1; pp. 14703 - 6 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
09.03.2017
Nature Publishing Group Nature Portfolio |
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| Abstract | Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.
Graphene nanoribbons are promising candidates for 2D material electrical interconnects; however, the top-down fabrication of nanoribbons has remained a challenge. Here, Chen
et al
. have used a hexagonal boron nitride template to grow narrow, integrated graphene nanoribbons with small bandgaps. |
|---|---|
| AbstractList | Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.
Graphene nanoribbons are promising candidates for 2D material electrical interconnects; however, the top-down fabrication of nanoribbons has remained a challenge. Here, Chen
et al
. have used a hexagonal boron nitride template to grow narrow, integrated graphene nanoribbons with small bandgaps. Graphene nanoribbons are promising candidates for 2D material electrical interconnects; however, the top-down fabrication of nanoribbons has remained a challenge. Here, Chenet al. have used a hexagonal boron nitride template to grow narrow, integrated graphene nanoribbons with small bandgaps. Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. |
| ArticleNumber | 14703 |
| Author | Chen, Lingxiu Zhang, Daoli Xie, Xiaoming Deng, Lianwen Wang, Hui Shan He, Li Xia, Hui Wang, Haomin Cong, Chunxiao Jiang, Mianheng Wu, Tianru Tang, Shujie Xie, Hong Li, Tianxin Li, Lei Yu, Ting |
| Author_xml | – sequence: 1 givenname: Lingxiu surname: Chen fullname: Chen, Lingxiu organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Physical Science and Technology, ShanghaiTech University – sequence: 2 givenname: Li surname: He fullname: He, Li organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Optical and Electronic Information, Huazhong University of Science and Technology – sequence: 3 givenname: Hui Shan surname: Wang fullname: Wang, Hui Shan organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Physics and Electronics, Central South University – sequence: 4 givenname: Haomin surname: Wang fullname: Wang, Haomin email: hmwang@mail.sim.ac.cn organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences – sequence: 5 givenname: Shujie surname: Tang fullname: Tang, Shujie organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences – sequence: 6 givenname: Chunxiao surname: Cong fullname: Cong, Chunxiao organization: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, State Key Laboratory of ASIC & System, School of Information Science and Technology, Fudan University – sequence: 7 givenname: Hong surname: Xie fullname: Xie, Hong organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences – sequence: 8 givenname: Lei surname: Li fullname: Li, Lei organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Physics and Electronics, Central South University – sequence: 9 givenname: Hui surname: Xia fullname: Xia, Hui organization: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences – sequence: 10 givenname: Tianxin surname: Li fullname: Li, Tianxin organization: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences – sequence: 11 givenname: Tianru surname: Wu fullname: Wu, Tianru organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences – sequence: 12 givenname: Daoli surname: Zhang fullname: Zhang, Daoli organization: School of Optical and Electronic Information, Huazhong University of Science and Technology – sequence: 13 givenname: Lianwen surname: Deng fullname: Deng, Lianwen organization: School of Physics and Electronics, Central South University – sequence: 14 givenname: Ting orcidid: 0000-0002-0113-2895 surname: Yu fullname: Yu, Ting organization: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University – sequence: 15 givenname: Xiaoming surname: Xie fullname: Xie, Xiaoming email: xmxie@mail.sim.ac.cn organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Physical Science and Technology, ShanghaiTech University – sequence: 16 givenname: Mianheng surname: Jiang fullname: Jiang, Mianheng organization: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, School of Physical Science and Technology, ShanghaiTech University |
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| Snippet | Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor... Graphene nanoribbons are promising candidates for 2D material electrical interconnects; however, the top-down fabrication of nanoribbons has remained a... |
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| Title | Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches |
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