Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films

The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not be...

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Published inNature communications Vol. 10; no. 1; pp. 864 - 10
Main Authors Heo, Seung Hwae, Jo, Seungki, Kim, Hyo Seok, Choi, Garam, Song, Jae Yong, Kang, Jun-Yun, Park, No-Jin, Ban, Hyeong Woo, Kim, Fredrick, Jeong, Hyewon, Jung, Jaemin, Jang, Jaeyoung, Lee, Won Bo, Shin, Hosun, Son, Jae Sung
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 20.02.2019
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Abstract The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe 2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe 2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm −1 K −2 . Despite significant efforts to improve the thermoelectric properties of polycrystalline SnSe, precise control of texturing and doping is a challenge. Here, the authors report hole doped and highly textured SnSe thin films prepared by low cost, scalable solution processing.
AbstractList The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe phase. We show that the strong textures of the thin films in the b-c plane originate from the transition of two dimensional SnSe to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm K .
Despite significant efforts to improve the thermoelectric properties of polycrystalline SnSe, precise control of texturing and doping is a challenge. Here, the authors report hole doped and highly textured SnSe thin films prepared by low cost, scalable solution processing.
The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe 2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe 2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm −1 K −2 . Despite significant efforts to improve the thermoelectric properties of polycrystalline SnSe, precise control of texturing and doping is a challenge. Here, the authors report hole doped and highly textured SnSe thin films prepared by low cost, scalable solution processing.
The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm−1 K−2.Despite significant efforts to improve the thermoelectric properties of polycrystalline SnSe, precise control of texturing and doping is a challenge. Here, the authors report hole doped and highly textured SnSe thin films prepared by low cost, scalable solution processing.
Abstract The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize polycrystalline SnSe with similar efficiencies. However, due to weak texturing and difficulties in doping, such high thermoelectric efficiencies have not been realized in polycrystals or thin films. Here, we show that highly textured and hole doped SnSe thin films with thermoelectric power factors at the single crystal level can be prepared by solution process. Purification step in the synthetic process produced a SnSe-based chalcogenidometallate precursor, which decomposes to form the SnSe 2 phase. We show that the strong textures of the thin films in the b–c plane originate from the transition of two dimensional SnSe 2 to SnSe. This composition change-driven transition offers wide control over composition and doping of the thin films. Our optimum SnSe thin films exhibit a thermoelectric power factor of 4.27 μW cm −1 K −2 .
ArticleNumber 864
Author Park, No-Jin
Kang, Jun-Yun
Jung, Jaemin
Jeong, Hyewon
Heo, Seung Hwae
Choi, Garam
Lee, Won Bo
Ban, Hyeong Woo
Shin, Hosun
Song, Jae Yong
Kim, Hyo Seok
Kim, Fredrick
Son, Jae Sung
Jang, Jaeyoung
Jo, Seungki
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  organization: School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University
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  organization: School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University
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  organization: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)
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  surname: Son
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  email: jsson@unist.ac.kr
  organization: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)
BackLink https://www.ncbi.nlm.nih.gov/pubmed/30787291$$D View this record in MEDLINE/PubMed
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SSID ssj0000391844
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Snippet The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize polycrystalline...
The discovery of SnSe single crystals with record high thermoelectric efficiency along the b-axis has led to the search for ways to synthesize polycrystalline...
Abstract The discovery of SnSe single crystals with record high thermoelectric efficiency along the b -axis has led to the search for ways to synthesize...
Despite significant efforts to improve the thermoelectric properties of polycrystalline SnSe, precise control of texturing and doping is a challenge. Here, the...
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Publisher
StartPage 864
SubjectTerms 140/133
140/146
639/301/299/2736
639/4077/4107
639/925/357/551
Composition
Crystals
Doping
Humanities and Social Sciences
multidisciplinary
Polycrystals
Power factor
Purification
Science
Science (multidisciplinary)
Single crystals
Texturing
Thermoelectricity
Thin films
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Title Composition change-driven texturing and doping in solution-processed SnSe thermoelectric thin films
URI https://link.springer.com/article/10.1038/s41467-019-08883-x
https://www.ncbi.nlm.nih.gov/pubmed/30787291
https://www.proquest.com/docview/2184166306
https://pubmed.ncbi.nlm.nih.gov/PMC6382880
https://doaj.org/article/9312d2f181584441a6c48277f18d42ea
Volume 10
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