One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods
We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x...
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Published in | Scientific reports Vol. 14; no. 1; pp. 7104 - 11 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group UK
26.03.2024
Nature Publishing Group Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | We present the fabrication of a MoS
2−x
Se
x
thin film from a co-sputtering process using MoS
2
and MoSe
2
commercial targets with 99.9% purity. The sputtering of the MoS
2
and MoSe
2
was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS
2−x
Se
x
phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS
2−x
Se
x
thin film, indicated by a blue shift in the A
1g
and E
1
g
vibrational modes at 355 cm
−1
and 255 cm
−1
, respectively. This work is complemented by computing the thermodynamic stability of a MoS
2−x
Se
x
phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF) AC04-94AL85000 USDOE National Nuclear Security Administration (NNSA) |
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-024-57243-3 |