Photochemical Studies on Bottom Anti-Reflective Coatings

The photochemical behavior of 193-nm photosensitive bottom anti-reflective coatings (BARCs) were studied. The effects of exposure dose, post-exposure bake (PEB) temperature, PAG size, and BARC thickness on contrast and the decrosslinking process was investigated. Using higher PEB temperatures improv...

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Bibliographic Details
Published inJournal of Photopolymer Science and Technology Vol. 19; no. 3; pp. 343 - 347
Main Authors Guerrero, Douglas J., Mercado, Ramil, Washburn, Carlton, Meador, Jim
Format Journal Article
LanguageEnglish
Published Hiratsuka The Society of Photopolymer Science and Technology(SPST) 01.01.2006
Japan Science and Technology Agency
Subjects
BARC
Coatings
Diffusion
Lithography
Optimization
PEB
Photochemical
Photoresists
photosensitive
Reflectivity
Silicon substrates
wet developable
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Summary:The photochemical behavior of 193-nm photosensitive bottom anti-reflective coatings (BARCs) were studied. The effects of exposure dose, post-exposure bake (PEB) temperature, PAG size, and BARC thickness on contrast and the decrosslinking process was investigated. Using higher PEB temperatures improve the BARC contrast. Smaller photogenerated acids diffuse more freely throughout the crosslinked polymer. The decrosslinking process had an energy of activation associated with it and is controlled by the exposure dose and PEB temperature. An optimum BARC thickness for lithography was located at the first reflectivity maximum in the reflectivity curve. At this thickness, the best contrast and lower D50 values are obtained. Lithographic evaluations at these BARC thicknesses using a photoresist showed good performance on 150-nm L/S (1:1.5) on both silicon and silicon dioxide substrates.
Bibliography:ObjectType-Article-1
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ISSN:0914-9244
1349-6336
1349-6336
DOI:10.2494/photopolymer.19.343