Hall effect in gated single-wall carbon nanotube films
The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carri...
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| Published in | Scientific reports Vol. 12; no. 1; pp. 101 - 7 |
|---|---|
| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
07.01.2022
Nature Publishing Group Nature Portfolio |
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| ISSN | 2045-2322 2045-2322 |
| DOI | 10.1038/s41598-021-03911-7 |
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| Abstract | The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the
n
- and
p
-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems. |
|---|---|
| AbstractList | The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal-semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems. The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n - and p -type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems. The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal-semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems.The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal-semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems. Abstract The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements. Previous Hall-effect studies on carbon nanotube films reported unreasonably large carrier densities without independent assessments of the carrier types and densities. Here, we have systematically investigated the validity of Hall-effect results for a series of metallic, semiconducting, and metal–semiconductor-mixed single-wall carbon nanotube films. With carrier densities controlled through applied gate voltages, we were able to observe the Hall effect both in the n- and p-type regions, detecting opposite signs in the Hall coefficient. By comparing the obtained carrier types and densities against values derived from simultaneous field-effect-transistor measurements, we found that, while the Hall carrier types were always correct, the Hall carrier densities were overestimated by up to four orders of magnitude. This significant overestimation indicates that thin films of one-dimensional SWCNTs are quite different from conventional hopping transport systems. |
| ArticleNumber | 101 |
| Author | Kono, Junichiro Yomogida, Yohei Komatsu, Natsumi Nishidome, Hiroyuki Yanagi, Kazuhiro Kawai, Hideki Ichinose, Yota Ueji, Kan Horiuchi, Kanako Okada, Ryotaro Gao, Weilu |
| Author_xml | – sequence: 1 givenname: Yohei surname: Yomogida fullname: Yomogida, Yohei email: yomogida@tmu.ac.jp organization: Department of Physics, Tokyo Metropolitan University – sequence: 2 givenname: Kanako surname: Horiuchi fullname: Horiuchi, Kanako organization: Department of Physics, Tokyo Metropolitan University – sequence: 3 givenname: Ryotaro surname: Okada fullname: Okada, Ryotaro organization: Department of Physics, Tokyo Metropolitan University – sequence: 4 givenname: Hideki surname: Kawai fullname: Kawai, Hideki organization: Department of Physics, Tokyo Metropolitan University – sequence: 5 givenname: Yota surname: Ichinose fullname: Ichinose, Yota organization: Department of Physics, Tokyo Metropolitan University – sequence: 6 givenname: Hiroyuki surname: Nishidome fullname: Nishidome, Hiroyuki organization: Department of Physics, Tokyo Metropolitan University – sequence: 7 givenname: Kan surname: Ueji fullname: Ueji, Kan organization: Department of Physics, Tokyo Metropolitan University – sequence: 8 givenname: Natsumi surname: Komatsu fullname: Komatsu, Natsumi organization: Department of Electrical and Computer Engineering, Rice University – sequence: 9 givenname: Weilu surname: Gao fullname: Gao, Weilu organization: Department of Electrical and Computer Engineering, University of Utah – sequence: 10 givenname: Junichiro surname: Kono fullname: Kono, Junichiro organization: Department of Electrical and Computer Engineering, Rice University, Department of Physics and Astronomy, Rice University, Department of Materials Science and NanoEngineering, Rice University – sequence: 11 givenname: Kazuhiro surname: Yanagi fullname: Yanagi, Kazuhiro email: yanagi-kazuhiro@tmu.ac.jp organization: Department of Physics, Tokyo Metropolitan University |
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| CitedBy_id | crossref_primary_10_3390_nano14110965 crossref_primary_10_1002_aelm_202400216 crossref_primary_10_1021_acsami_3c15704 crossref_primary_10_1103_PhysRevB_110_115431 |
| Cites_doi | 10.1126/science.1222453 10.2307/2369245 10.1088/0022-3719/14/28/010 10.1002/adma.201607054 10.1063/1.3364131 10.1103/PhysRevB.55.6704 10.1002/adfm.201903617 10.1021/nn100966s 10.1021/acsanm.8b00756 10.1038/srep23650 10.1103/PhysRevB.15.2311 10.1103/PhysRevMaterials.2.116001 10.1103/PhysRevMaterials.1.046003 10.1021/acs.nanolett.9b03022 10.1002/adfm.201802610 10.1021/nl034841q 10.1063/1.370838 10.1016/j.synthmet.2014.10.001 10.1143/JPSJ.77.124709 10.1103/PhysRevLett.78.951 10.1063/1.4916734 10.1021/acsnano.8b06511 10.1002/adma.201100549 10.1038/am.2016.30 10.1021/acs.jpclett.9b03217 10.1038/nmat4634 10.1038/ncomms2213 10.1080/14786437708232943 10.1021/nn101177n 10.1103/PhysRevB.85.035313 10.1002/adfm.201902273 10.1103/PhysRevB.58.16064 10.1016/0379-6779(96)80156-1 10.1103/PhysRevB.71.155410 |
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| Snippet | The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect measurements.... Abstract The presence of hopping carriers and grain boundaries can sometimes lead to anomalous carrier types and density overestimation in Hall-effect... |
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| SubjectTerms | 639/301/1005/1007 639/925/357/73 Carbon carbon nanotubes Electromagnetism electronic devices ENGINEERING fullerenes Humanities and Social Sciences multidisciplinary Science Science (multidisciplinary) Thin films |
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| Title | Hall effect in gated single-wall carbon nanotube films |
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