Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium

• Published in: Scientific reports Vol. 9; no. 1; p. 325
• Main Authors: Liu, Yang, Zhou, Bing, Zhu, Jian-Gang (Jimmy)
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 23.01.2019; Nature Publishing Group
• Subjects: 142/126; 639/301/119/1001; 639/301/119/997; Electromagnetism; Humanities and Social Sciences; Iridium; Magnetism; multidisciplinary; Random access memory; Science; Science & Technology - Other Topics; Science (multidisciplinary)

Magnetization switching by spin-orbit torque (SOT) via spin Hall effect represents as a competitive alternative to that by spin-transfer torque (STT) used for magnetoresistive random access memory (MRAM), as it doesn’t require high-density current to go through the tunnel junction. For perpendicular...