Nanophotonic Pockels modulators on a silicon nitride platform
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wa...
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| Published in | Nature communications Vol. 9; no. 1; pp. 3444 - 6 |
|---|---|
| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
England
Nature Publishing Group
27.08.2018
Nature Publishing Group UK Nature Portfolio |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm
). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. |
|---|---|
| AbstractList | Abstract
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (
α
≈ 1 dB cm
−1
). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm ). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a modulation bandwidth beyond 33 GHz and with data rates of 40 Gbps. Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ( α ≈ 1 dB cm −1 ). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a modulation bandwidth beyond 33 GHz and with data rates of 40 Gbps. Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm−1). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN. |
| ArticleNumber | 3444 |
| Author | Neyts, Kristiaan George, John P Van Thourhout, Dries Kuyken, Bart Verbist, Jochem Alexander, Koen Beeckman, Jeroen |
| Author_xml | – sequence: 1 givenname: Koen orcidid: 0000-0002-5048-749X surname: Alexander fullname: Alexander, Koen organization: Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium – sequence: 2 givenname: John P surname: George fullname: George, John P organization: Liquid Crystals and Photonics Group, ELIS Department, Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium – sequence: 3 givenname: Jochem surname: Verbist fullname: Verbist, Jochem organization: IDLab, INTEC Department, Ghent University-imec, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium – sequence: 4 givenname: Kristiaan orcidid: 0000-0001-5551-9772 surname: Neyts fullname: Neyts, Kristiaan organization: Liquid Crystals and Photonics Group, ELIS Department, Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium – sequence: 5 givenname: Bart surname: Kuyken fullname: Kuyken, Bart organization: Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium – sequence: 6 givenname: Dries orcidid: 0000-0003-0111-431X surname: Van Thourhout fullname: Van Thourhout, Dries email: Dries.VanThourhout@UGent.be, Dries.VanThourhout@UGent.be organization: Center for Nano- and Biophotonics (NB-Photonics), Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium. Dries.VanThourhout@UGent.be – sequence: 7 givenname: Jeroen orcidid: 0000-0002-0711-2465 surname: Beeckman fullname: Beeckman, Jeroen email: Jeroen.Beeckman@UGent.be, Jeroen.Beeckman@UGent.be organization: Liquid Crystals and Photonics Group, ELIS Department, Ghent University, Technologiepark-Zwijnaarde 15, 9052, Zwijnaarde, Belgium. Jeroen.Beeckman@UGent.be |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/30150757$$D View this record in MEDLINE/PubMed |
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| Snippet | Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and... Abstract Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are... Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric... |
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| SubjectTerms | C band CMOS Ferroelectric materials Ferroelectricity Lead Lead zirconate titanates Modulators Photonics Silicon Silicon nitride Wave propagation |
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| Title | Nanophotonic Pockels modulators on a silicon nitride platform |
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