On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films
We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with o...
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| Published in | Journal of physics. D, Applied physics Vol. 43; no. 13; p. 132003 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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Bristol
IOP Publishing
07.04.2010
Institute of Physics |
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| Abstract | We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3(ZnO)m homologous phase that degrades the electrical conductivity. |
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| AbstractList | We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3 (ZnO) m homologous phase that degrades the electrical conductivity. We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L3 and Al K edge x-ray absorption near-edge structure that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al2O3(ZnO)m homologous phase that degrades the electrical conductivity. We report on a possible origin of electrical heterogeneities in 4 at% Al doped ZnO (AZO) reactively sputtered films. It is found through Zn L 3 and Al K edge X-ray absorption near edge structure (XANES) that a fraction of the Al dopant is deactivated by its positioning in octahedral conformation with oxygen. This fraction as well as the conductivity, optical bandgap and c-axis parameter of ZnO wurtzite are all found to depend on the sample position during deposition. The present results suggest the formation of a metastable Al 2 O 3 (ZnO) m homologous phase that degrades the electrical conductivity. Transparent conducting oxides (TCOs) characterized by both high transparency in the visible range and high electrical conductivity are key materials for devices such |
| Author | Pierson, Jean-François Andersson, Joakim Horwat, David Capon, Fabien Jullien, Maud Endrino, José Luis |
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| Keywords | Electrical conductivity XANES Doping Optical conductivity Thin films Energy gap Electronic structure Aluminium additions Impurity site Zinc oxide Reactive sputtering Absorption spectra Microstructure Physical Sciences |
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| Snippet | We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L3 and Al K... We report on a possible origin of electrical heterogeneities in 4 at% Al doped ZnO (AZO) reactively sputtered films. It is found through Zn L 3 and Al K edge... We report on the possible origin of electrical heterogeneities in 4 at% Al-doped ZnO (AZO) reactively sputtered films. It is found through the Zn L-3 and Al K... |
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| SubjectTerms | Aluminum Azo Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science; rheology Deactivation Deposition by sputtering Dopants Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Fysik Heterogeneity Ii-vi semiconductors Materials science Methods of deposition of films and coatings; film growth and epitaxy NATURAL SCIENCES NATURVETENSKAP Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics Resistivity Thin films Thin films and multilayers Wurtzite Zinc oxide |
| Title | On the deactivation of the dopant and electronic structure in reactively sputtered transparent Al-doped ZnO thin films |
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