A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching

Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and modera...

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Published inNanophotonics (Berlin, Germany) Vol. 11; no. 5; pp. 1033 - 1040
Main Authors Liang, Youting, Zhou, Junxia, Liu, Zhaoxiang, Zhang, Haisu, Fang, Zhiwei, Zhou, Yuan, Yin, Difeng, Lin, Jintian, Yu, Jianping, Wu, Rongbo, Wang, Min, Cheng, Ya
Format Journal Article
LanguageEnglish
Published Germany De Gruyter 01.02.2022
Walter de Gruyter GmbH
Subjects
Amplifiers
Cladding
Dubnium
Erbium
Etching
High gain
integrated waveguide amplifier
Lithium
lithium niobate nanophotonics
Lithium niobates
Photolithography
photolithography assisted chemomechanical etching
Power consumption
Power management
Semiconductor lasers
Tantalum
Tantalum oxides
Thin films
Waveguides
lithium niobate nanophotonics
photolithography assisted chemomechanical etching
integrated waveguide amplifier
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Abstract Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta ) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
AbstractList Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta 2 O 5 ) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta 2 O 5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta2O5) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta2O5 cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta ) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk materials, underpinning the lightwave communication and large-scale sensing. Subject to the highly confined mode in the micro-to-nanoscale and moderate propagation loss, gain and power scaling in such integrated devices prove to be more challenging compared to their bulk counterparts. In this work, a thin cladding layer of tantalum pentoxide (Ta O ) is employed in the erbium doped lithium niobate (LN) waveguide amplifier fabricated on the thin film lithium niobate on insulator (LNOI) wafer by the photolithography assisted chemo-mechanical etching (PLACE) technique. Above 20 dB small signal internal net gain is achieved at the signal wavelength around 1532 nm in the 10 cm long LNOI amplifier pumped by the diode laser at ∼980 nm. Experimental characterizations reveal the advantage of Ta O cladding in higher optical gain compared with the air-clad amplifier, which is further explained by the theoretical modeling of the LNOI amplifier including the guided mode structures and the steady-state response of erbium ions.
Author Zhang, Haisu
Wu, Rongbo
Zhou, Junxia
Fang, Zhiwei
Liang, Youting
Cheng, Ya
Yin, Difeng
Wang, Min
Lin, Jintian
Zhou, Yuan
Yu, Jianping
Liu, Zhaoxiang
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  givenname: Junxia
  surname: Zhou
  fullname: Zhou, Junxia
  organization: The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
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  fullname: Liu, Zhaoxiang
  organization: The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
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  givenname: Haisu
  orcidid: 0000-0001-7823-6257
  surname: Zhang
  fullname: Zhang, Haisu
  email: hszhang@phy.ecnu.edu.cn
  organization: The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
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  orcidid: 0000-0002-8047-1763
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  organization: The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
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  givenname: Yuan
  surname: Zhou
  fullname: Zhou, Yuan
  organization: State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
– sequence: 7
  givenname: Difeng
  surname: Yin
  fullname: Yin, Difeng
  organization: State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
– sequence: 8
  givenname: Jintian
  surname: Lin
  fullname: Lin, Jintian
  organization: State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
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  givenname: Jianping
  surname: Yu
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  organization: State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
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  givenname: Rongbo
  surname: Wu
  fullname: Wu, Rongbo
  organization: State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
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  surname: Wang
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  organization: The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
– sequence: 12
  givenname: Ya
  surname: Cheng
  fullname: Cheng, Ya
  email: ya.cheng@siom.ac.cn
  organization: Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
BackLink https://www.ncbi.nlm.nih.gov/pubmed/39634477$$D View this record in MEDLINE/PubMed
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Copyright 2022 Youting Liang et al., published by De Gruyter, Berlin/Boston.
2022. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
2022 Youting Liang et al., published by De Gruyter, Berlin/Boston 2022 Youting Liang et al., published by De Gruyter, Berlin/Boston GmbH, Berlin/Boston
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– notice: 2022. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.
– notice: 2022 Youting Liang et al., published by De Gruyter, Berlin/Boston 2022 Youting Liang et al., published by De Gruyter, Berlin/Boston GmbH, Berlin/Boston
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Issue 5
Keywords lithium niobate nanophotonics
photolithography assisted chemomechanical etching
integrated waveguide amplifier
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Snippet Erbium doped integrated waveguide amplifier and laser prevail in power consumption, footprint, stability and scalability over the counterparts in bulk...
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SourceType Open Website
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StartPage 1033
SubjectTerms Amplifiers
Cladding
Dubnium
Erbium
Etching
High gain
integrated waveguide amplifier
Lithium
lithium niobate nanophotonics
Lithium niobates
Photolithography
photolithography assisted chemomechanical etching
Power consumption
Power management
Semiconductor lasers
Tantalum
Tantalum oxides
Thin films
Waveguides
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Title A high-gain cladded waveguide amplifier on erbium doped thin-film lithium niobate fabricated using photolithography assisted chemo-mechanical etching
URI https://www.degruyter.com/doi/10.1515/nanoph-2021-0737
https://www.ncbi.nlm.nih.gov/pubmed/39634477
https://www.proquest.com/docview/2635778931
https://www.proquest.com/docview/3146521290
https://pubmed.ncbi.nlm.nih.gov/PMC11501891
https://doaj.org/article/cbf4b4847d0a4c1f9dbdfd005985cae5
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