Silicon oxide buffer layer at the p–i interface in amorphous and microcrystalline silicon solar cells - Bugnon, Grégory; Parascandolo, Gaetano; Hänni, Simon; Stuckelberger, Michael; Charrière, Mathieu; Despeisse, Matthieu; Meillaud, Fanny; Ballif, Christophe (Solar energy materials and solar cells, 2014)
Keywords: Amorphous silicon; Applied sciences; Boron cross-contamination; Buffer layers; Current density; Deposition; Direct energy conversion and energy accumulation; Electrical engineering. Electrical power engineering; Electrical power engineering; Energy; Exact sciences and technology; Gain; Microcrystalline silicon nucleation; Natural energy; Photoelectric conversion; Photovoltaic cells; Photovoltaic conversion; p–i interface; Silicon; Silicon oxide; Silicon oxides; Solar cell; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Boron cross-contamination; Solar cell; Silicon oxide; p–i interface; Amorphous silicon; Microcrystalline silicon nucleation; Performance evaluation; Amorphous material; Nucleation; Stacking; Roughness; Implementation; Boron; Thin film cell; p-i interface; Silicon; Electrical characteristic; Buffer layer; Silicon solar cells; Short circuit currents; Oxide layer; Water vapor; Contamination; Crystalline material; Silicon oxides; Wide band gap semiconductors; Microcrystal