Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2
Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co 3 Sn 2 S 2 , we show surface kagome electronic states (SKESs) on a Sn-terminated tria...
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| Published in | Nature communications Vol. 14; no. 1; pp. 5230 - 8 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
26.08.2023
Nature Publishing Group Nature Portfolio |
| Subjects | |
| Online Access | Get full text |
| ISSN | 2041-1723 2041-1723 |
| DOI | 10.1038/s41467-023-40942-2 |
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| Abstract | Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co
3
Sn
2
S
2
, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co
3
Sn
2
S
2
surface. Such SKESs are imprinted by vertical
p-d
electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co
3
Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co
3
Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.
Kagome materials host 2D planes which give rise to kagome physics, but these are typically embedded in the bulk. Huang et al. demonstrate a strategy for generating surface kagome electronic states by vertical
p-d
electronic hybridization between surface atoms and the buried Co kagome network in Co
3
Sn
2
S
2
. |
|---|---|
| AbstractList | Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co
3
Sn
2
S
2
, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co
3
Sn
2
S
2
surface. Such SKESs are imprinted by vertical
p-d
electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co
3
Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co
3
Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.
Kagome materials host 2D planes which give rise to kagome physics, but these are typically embedded in the bulk. Huang et al. demonstrate a strategy for generating surface kagome electronic states by vertical
p-d
electronic hybridization between surface atoms and the buried Co kagome network in Co
3
Sn
2
S
2
. Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co 3 Sn 2 S 2 , we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co 3 Sn 2 S 2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co 3 Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co 3 Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques. Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques. Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques. Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques.Kagome materials host 2D planes which give rise to kagome physics, but these are typically embedded in the bulk. Huang et al. demonstrate a strategy for generating surface kagome electronic states by vertical p-d electronic hybridization between surface atoms and the buried Co kagome network in Co3Sn2S2. Abstract Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the compelling identification of the two cleavable surfaces of Co3Sn2S2, we show surface kagome electronic states (SKESs) on a Sn-terminated triangular Co3Sn2S2 surface. Such SKESs are imprinted by vertical p-d electronic hybridization between the surface Sn (subsurface S) atoms and the buried Co kagome-lattice network in the Co3Sn layer under the surface. Owing to the subsequent lateral hybridization of the Sn and S atoms in a corner-sharing manner, the kagome symmetry and topological electronic properties of the Co3Sn layer is proximate to the Sn surface. The SKESs and both hybridizations were verified via qPlus non-contact atomic force microscopy (nc-AFM) and density functional theory calculations. The construction of SKESs with tunable properties can be achieved by the atomic substitution of surface Sn (subsurface S) with other group III-V elements (Se or Te), which was demonstrated theoretically. This work exhibits the powerful capacity of nc-AFM in characterizing localized topological states and reveals the strategy for synthesis of large-area transition-metal-based kagome-lattice materials using conventional surface deposition techniques. |
| ArticleNumber | 5230 |
| Author | Zhang, Yu-Yang Cheng, Zhihai Huang, Li Wang, Ziqiang Gao, Hong-Jun Cheng, Haixia Yang, Haitao Lei, Hechang Hu, Zhixin Zhu, Shiyu Qiu, Xianggang Zheng, Qi Liu, Enke Chen, Hui Kong, Xianghua Li, Yan Qiao, Jingsi Ji, Wei Xing, Yuqing Lin, Xiao |
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4 givenname: Yuqing surname: Xing fullname: Xing, Yuqing organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 5 givenname: Hui orcidid: 0000-0002-3369-8113 surname: Chen fullname: Chen, Hui organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 6 givenname: Yan surname: Li fullname: Li, Yan organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 7 givenname: Zhixin orcidid: 0000-0002-3253-6964 surname: Hu fullname: Hu, Zhixin organization: Center for Joint Quantum Studies and Department of Physics, Institute of Science, Tianjin University – sequence: 8 givenname: Shiyu orcidid: 0000-0002-8771-5273 surname: Zhu fullname: Zhu, Shiyu organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 9 givenname: Jingsi orcidid: 0000-0001-6464-5500 surname: Qiao fullname: Qiao, Jingsi organization: Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Integrated Circuits and Electronics, Beijing Institute of Technology – sequence: 10 givenname: Yu-Yang orcidid: 0000-0002-9548-0021 surname: Zhang fullname: Zhang, Yu-Yang organization: School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 11 givenname: Haixia surname: Cheng fullname: Cheng, Haixia organization: Beijing Key Laboratory of Optoelectronic 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organization: Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China – sequence: 16 givenname: Xiao surname: Lin fullname: Lin, Xiao organization: School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 17 givenname: Ziqiang surname: Wang fullname: Wang, Ziqiang organization: Department of Physics, Boston College – sequence: 18 givenname: Haitao orcidid: 0000-0003-4304-9835 surname: Yang fullname: Yang, Haitao email: htyang@iphy.ac.cn organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences – sequence: 19 givenname: Wei orcidid: 0000-0001-5249-6624 surname: Ji fullname: Ji, Wei email: wji@ruc.edu.cn organization: Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China – sequence: 20 givenname: Hong-Jun orcidid: 0000-0001-9323-1307 surname: Gao fullname: Gao, Hong-Jun email: hjgao@iphy.ac.cn organization: Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Chinese Academy of Sciences, Hefei National Laboratory |
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| DOI | 10.1038/s41467-023-40942-2 |
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| Snippet | Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on the... Abstract Kagome-lattice materials possess attractive properties for quantum computing applications, but their synthesis remains challenging. Herein, based on... |
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| SubjectTerms | 147/138 147/3 639/301/119/544 639/301/119/995 Atomic force microscopy Atomic properties CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY Density functional theory Electron states electronic properties and materials Humanities and Social Sciences Hybridization multidisciplinary Quantum computing Science Science (multidisciplinary) surfaces, interfaces and thin films Synthesis Topology Transition metals |
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| Title | Discovery and construction of surface kagome electronic states induced by p-d electronic hybridization in Co3Sn2S2 |
| URI | https://link.springer.com/article/10.1038/s41467-023-40942-2 https://www.proquest.com/docview/2857484763 https://www.proquest.com/docview/2857846478 https://www.osti.gov/biblio/1996870 https://pubmed.ncbi.nlm.nih.gov/PMC10460379 https://doaj.org/article/543f712491e643cf9503be3d02dd75a0 |
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