Tuning the Threshold Voltage in Organic Thin-Film Transistors by Local Channel Doping Using Photoreactive Interfacial Layers

The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin‐film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p‐type organic inverters can be realized by combining an...

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Published inAdvanced materials (Weinheim) Vol. 22; no. 47; pp. 5361 - 5365
Main Authors Marchl, Marco, Edler, Matthias, Haase, Anja, Fian, Alexander, Trimmel, Gregor, Griesser, Thomas, Stadlober, Barbara, Zojer, Egbert
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 14.12.2010
WILEY‐VCH Verlag
Subjects
Communication
doping
Gold - chemistry
Naphthacenes - chemistry
Organic Chemicals - chemistry
organic electronics
organic field effect transistors
polymeric materials
Polymers - chemical synthesis
Polymers - chemistry
Silicon Dioxide - chemistry
Transistors, Electronic
Ultraviolet Rays
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Summary:The insertion of a thin photoacid generator layer between the dielectric and the active layer in organic thin‐film transistors (OTFTs) allows control of the threshold voltage through UV illumination by means of interfacial channel doping. All p‐type organic inverters can be realized by combining an OTFT working in depletion mode and one operating in enhancement mode.
Bibliography:Funded Access
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ArticleID:ADMA201002912
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ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201002912