Nonlinear amplification of microwave signals in spin-torque oscillators
Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring com...
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Published in | Nature communications Vol. 14; no. 1; pp. 2183 - 9 |
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Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
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London
Nature Publishing Group UK
17.04.2023
Nature Publishing Group Nature Portfolio |
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Abstract | Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|
S
11
| > 2) for input power on the order of nW (<−40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems.
Microwave devices are instrumental in wireless communications. Recently, spintronic-based microwave devices have seen significant interest, with the potential for smaller size, and lower power consumption. Here, Zhu et al demonstrate a spintronic amplifier with record gain, which uses material stacks already employed in industrially fabricated magnetic memories. |
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AbstractList | Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S11 | > 2) for input power on the order of nW (<−40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems.Microwave devices are instrumental in wireless communications. Recently, spintronic-based microwave devices have seen significant interest, with the potential for smaller size, and lower power consumption. Here, Zhu et al demonstrate a spintronic amplifier with record gain, which uses material stacks already employed in industrially fabricated magnetic memories. Abstract Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S 11 | > 2) for input power on the order of nW (<−40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems. Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (| S 11 | > 2) for input power on the order of nW (<−40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems. Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (| S 11 | > 2) for input power on the order of nW (<−40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems. Microwave devices are instrumental in wireless communications. Recently, spintronic-based microwave devices have seen significant interest, with the potential for smaller size, and lower power consumption. Here, Zhu et al demonstrate a spintronic amplifier with record gain, which uses material stacks already employed in industrially fabricated magnetic memories. Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S11 | > 2) for input power on the order of nW (<-40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems.Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S11 | > 2) for input power on the order of nW (<-40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems. Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential reductions in size and power consumption. However, only a few concepts for spintronic amplifiers have been proposed, typically requiring complex device configurations or material stacks. Here, we demonstrate a spintronic amplifier based on two-terminal magnetic tunnel junctions (MTJs) produced with CMOS-compatible material stacks that have already been used for spin-transfer torque memories. We achieve a record gain (|S | > 2) for input power on the order of nW (<-40 dBm) at an appropriate choice of the bias field direction and amplitude. Based on micromagnetic simulations and experiments, we describe the fundamental aspects driving the amplification and show the key role of the co-existence in microwave emissions of a dynamic state of the MTJ excited by a dc current and the injection locking mode driven by the microwave input signal. Our work provides a way to develop a class of compact amplifiers that can impact the design of the next generation of spintronics-CMOS hybrid systems. |
ArticleNumber | 2183 |
Author | Carpentieri, Mario Zeng, Zhongming Zhu, Keqiang Finocchio, Giovanni Verba, Roman Puliafito, Vito Cai, Jialin Fang, Bin Zhang, Like Giordano, Anna Zhang, Baoshun |
Author_xml | – sequence: 1 givenname: Keqiang surname: Zhu fullname: Zhu, Keqiang organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences – sequence: 2 givenname: Mario orcidid: 0000-0001-5165-5873 surname: Carpentieri fullname: Carpentieri, Mario organization: Department of Electrical and Information Engineering, Politecnico di Bari – sequence: 3 givenname: Like surname: Zhang fullname: Zhang, Like organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, School of Electronics and Information Engineering, Wuxi University – sequence: 4 givenname: Bin surname: Fang fullname: Fang, Bin email: bfang2013@sinano.ac.cn organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences – sequence: 5 givenname: Jialin orcidid: 0000-0001-9462-5586 surname: Cai fullname: Cai, Jialin organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences – sequence: 6 givenname: Roman surname: Verba fullname: Verba, Roman organization: Institute of Magnetism – sequence: 7 givenname: Anna surname: Giordano fullname: Giordano, Anna organization: Department of Engineering, University of Messina – sequence: 8 givenname: Vito orcidid: 0000-0003-4438-538X surname: Puliafito fullname: Puliafito, Vito organization: Department of Electrical and Information Engineering, Politecnico di Bari – sequence: 9 givenname: Baoshun surname: Zhang fullname: Zhang, Baoshun organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences – sequence: 10 givenname: Giovanni orcidid: 0000-0002-1043-3876 surname: Finocchio fullname: Finocchio, Giovanni email: gfinocchio@unime.it organization: Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina – sequence: 11 givenname: Zhongming orcidid: 0000-0001-7240-2058 surname: Zeng fullname: Zeng, Zhongming email: zmzeng2012@sinano.ac.cn organization: Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Division of Nano-Devices and Technologies & Nanchang Key Laboratory of Advanced Packaging, Jiangxi Institute of Nanotechnology |
BackLink | https://www.ncbi.nlm.nih.gov/pubmed/37069148$$D View this record in MEDLINE/PubMed |
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Snippet | Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the potential... Abstract Spintronics-based microwave devices, such as oscillators and detectors, have been the subject of intensive investigation in recent years owing to the... |
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SubjectTerms | 142/126 639/166/987 639/925/927/1062 Amplification Amplifiers CMOS Design Emissions Frequency locking Humanities and Social Sciences Hybrid systems multidisciplinary Oscillators Power consumption Power management Receivers & amplifiers Science Science (multidisciplinary) Spintronics Stacks Torque Tunnel junctions Wireless communications |
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Title | Nonlinear amplification of microwave signals in spin-torque oscillators |
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