APA (7th ed.) Citation

Yuan, F., Deng, N., Shih, C., Tseng, Y., Chang, T., Chang, K., . . . Sze, S. M. (2017). Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment. Nanoscale research letters, 12(1), 574-6. https://doi.org/10.1186/s11671-017-2330-3

Chicago Style (17th ed.) Citation

Yuan, Fang-Yuan, et al. "Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment." Nanoscale Research Letters 12, no. 1 (2017): 574-6. https://doi.org/10.1186/s11671-017-2330-3.

MLA (9th ed.) Citation

Yuan, Fang-Yuan, et al. "Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment." Nanoscale Research Letters, vol. 12, no. 1, 2017, pp. 574-6, https://doi.org/10.1186/s11671-017-2330-3.