Manipulating exchange bias in 2D magnetic heterojunction for high-performance robust memory applications

• Published in: Nature communications Vol. 14; no. 1; pp. 2190 - 10
• Main Authors: Huang, Xinyu, Zhang, Luman, Tong, Lei, Li, Zheng, Peng, Zhuiri, Lin, Runfeng, Shi, Wenhao, Xue, Kan-Hao, Dai, Hongwei, Cheng, Hui, de Camargo Branco, Danilo, Xu, Jianbin, Han, Junbo, Cheng, Gary J., Miao, Xiangshui, Ye, Lei
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 17.04.2023; Nature Publishing Group; Nature Portfolio
• Subjects: 140/133; 147/135; 147/3; 639/301/357/1018; 639/925/927/1062; Antiferromagnetism; Bias; Data storage; Electronic devices; Electrons; Exchanging; Ferromagnetism; Heterojunctions; Heterostructures; Humanities and Social Sciences; Interlayers; multidisciplinary; Robustness; Science; Science (multidisciplinary); Spin valves

The exchange bias (EB) effect plays an undisputed role in the development of highly sensitive, robust, and high-density spintronic devices in magnetic data storage. However, the weak EB field, low blocking temperature, as well as the lack of modulation methods, seriously limit the application of EB...