Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity
Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characte...
Saved in:
| Published in | Nanoscale research letters Vol. 14; no. 1; pp. 102 - 6 |
|---|---|
| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
Springer US
15.03.2019
Springer Nature B.V SpringerOpen |
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. |
|---|---|
| AbstractList | Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems.Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on a low-temperature atomic layer deposition process, a flexible electrical synapse was proposed and showed bipolar resistive switching characteristics. With the formation and rupture of ions conductive filaments path, the conductance was modulated gradually. Under a series of pre-synaptic spikes, the device successfully emulated remarkable short-term plasticity, long-term plasticity, and forgetting behaviors. Therefore, memory and learning ability were integrated to the single flexible memristor, which are promising for the next-generation of artificial neuromorphic computing systems. |
| ArticleNumber | 102 |
| Author | Wang, Tian-Yu Sun, Qing-Qing Chen, Lin Ding, Shi-Jin Zhang, David Wei Meng, Jia-Lin He, Zhen-Yu Zhu, Hao |
| Author_xml | – sequence: 1 givenname: Tian-Yu surname: Wang fullname: Wang, Tian-Yu organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 2 givenname: Jia-Lin surname: Meng fullname: Meng, Jia-Lin organization: Frontier Science Center for Synthetic Biology and Key Laboratory of Systems Bioengineering (MOE), and School of Chemical Engineering and Technology, Tianjin University – sequence: 3 givenname: Zhen-Yu surname: He fullname: He, Zhen-Yu organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 4 givenname: Lin orcidid: 0000-0002-7145-7564 surname: Chen fullname: Chen, Lin email: linchen@fudan.edu.cn organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 5 givenname: Hao surname: Zhu fullname: Zhu, Hao organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 6 givenname: Qing-Qing surname: Sun fullname: Sun, Qing-Qing organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 7 givenname: Shi-Jin surname: Ding fullname: Ding, Shi-Jin organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University – sequence: 8 givenname: David Wei surname: Zhang fullname: Zhang, David Wei organization: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University |
| BookMark | eNp9kk1v1DAQhiNURD_gB3CLxIVLWn_G8QWpKpRWWlSkFglxsSbJZNerJF5sL5B_j0MqUCvRi8cav-_jsWeOs4PRjZhlryk5pbQqzwKlpaIFobpgmvNiepYdUSnLgqny60Haa04LJRU_zI5D2BIiFFHli-yQk0opqflRhufRDbbJVzChz9_jzgUbsc2vOnIqv_m03LCihpBSlz3-snWP-SccvA3R-fynjZv8duN8PFu5cV3coR_y22mEXUzMzz2EFG2cXmbPO-gDvrqPJ9mXyw93F1fF6ubj9cX5qmikoLHglEIpKll3QDoUHbSC1bqrQQopJfCWaiQNMKCQkhUnUHey02UDQoGWDT_Jrhdu62Brdt4O4CfjwJo_CefXBnwqqUcjFZWMV23LRS0I0koj40Lq9EGN5o1KrHcLa7evB2wbHKOH_gH04cloN2btfphSMCLZDHh7D_Du-x5DNIMNDfY9jOj2wbC5PaWWkiTpm0fSrdv7MX2V4VSnHpNS8adUiUWV5JpWSUUXVeNdCB67vyVTYuaxMcvYmDQ2Zh4bMyWPeuRJXYNo3fwy2z_pZIszpFvGNfp_Nf3f9Bs-JNbw |
| CitedBy_id | crossref_primary_10_1016_j_nanoen_2022_108074 crossref_primary_10_3390_ijms22073390 crossref_primary_10_7567_1347_4065_ab4b69 crossref_primary_10_3390_ma13122755 crossref_primary_10_1109_LED_2019_2956282 crossref_primary_10_1002_apxr_202300123 crossref_primary_10_1002_adfm_202205933 crossref_primary_10_1016_j_apmt_2020_100582 crossref_primary_10_1002_er_5371 crossref_primary_10_1063_1_5138193 crossref_primary_10_1088_2053_1591_ac14fe crossref_primary_10_1039_D1NH00452B crossref_primary_10_1002_aisy_202000162 crossref_primary_10_1021_acsami_9b15677 crossref_primary_10_3390_nano10102069 crossref_primary_10_1002_adma_202307951 crossref_primary_10_1109_TED_2022_3224419 crossref_primary_10_3389_fnano_2021_821687 crossref_primary_10_1002_aelm_202200877 crossref_primary_10_1038_s41467_022_31804_4 crossref_primary_10_1149_1945_7111_abca71 crossref_primary_10_1021_acsaelm_2c00037 crossref_primary_10_1063_5_0140746 crossref_primary_10_1109_TED_2023_3306730 crossref_primary_10_3390_nano11020359 crossref_primary_10_1016_j_chaos_2021_111223 crossref_primary_10_1021_acsami_9b21530 crossref_primary_10_1063_5_0142789 crossref_primary_10_1016_j_xcrp_2024_102202 crossref_primary_10_1039_D0NR00919A crossref_primary_10_1039_D1NR01535D crossref_primary_10_1016_j_mssp_2024_109232 crossref_primary_10_1002_adom_202302887 crossref_primary_10_3390_ijms22020773 crossref_primary_10_1002_adma_202205402 crossref_primary_10_1088_1361_6528_abd3c7 crossref_primary_10_1039_D4RA02830A crossref_primary_10_1002_pssr_202000357 crossref_primary_10_1088_1361_6641_ab76b0 crossref_primary_10_1021_acsnano_0c10049 |
| Cites_doi | 10.1186/s11671-017-1847-9 10.1002/adfm.201806037 10.1002/adfm.201804397 10.1038/s41928-017-0002-z 10.1002/smll.201700933 10.1002/smll.201600893 10.1038/s41467-017-00803-1 10.1063/1.5027776 10.1002/aelm.201800373 10.1021/acsami.8b05036 10.1109/TED.2012.2184544 10.1002/adma.201700906 10.1002/adma.201503575 10.1002/adma.201604310 10.1038/nature03010 10.1021/acsnano.6b07894 10.1021/acsnano.7b08331 10.1021/acsami.8b16841 10.1039/C8NR04734K 10.1002/aelm.201600090 10.1002/smll.201800079 10.1002/smll.201701193 10.1038/ncomms15199 10.1038/nmat4856 10.1039/C8NR00222C 10.1002/adfm.201803728 10.1002/adma.201706395 10.1038/ncomms3676 10.1109/LED.2017.2722463 10.1109/LED.2017.2698083 |
| ContentType | Journal Article |
| Copyright | The Author(s). 2019 Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved. © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. Copyright Springer Nature B.V. Dec 2019 |
| Copyright_xml | – notice: The Author(s). 2019 – notice: Nanoscale Research Letters is a copyright of Springer, (2019). All Rights Reserved. © 2019. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License. – notice: Copyright Springer Nature B.V. Dec 2019 |
| DBID | C6C AAYXX CITATION 7QF 7QO 7QQ 7SC 7SE 7SP 7SR 7TA 7TB 7U5 8BQ 8FD 8FE 8FG 8FH ABJCF ABUWG AEUYN AFKRA AZQEC BBNVY BENPR BGLVJ BHPHI CCPQU D1I DWQXO F28 FR3 GNUQQ H8D H8G HCIFZ JG9 JQ2 KB. KR7 L7M LK8 L~C L~D M7P P64 PDBOC PHGZM PHGZT PIMPY PKEHL PQEST PQGLB PQQKQ PQUKI PRINS 7X8 5PM DOA |
| DOI | 10.1186/s11671-019-2933-y |
| DatabaseName | Springer Nature OA Free Journals CrossRef Aluminium Industry Abstracts Biotechnology Research Abstracts Ceramic Abstracts Computer and Information Systems Abstracts Corrosion Abstracts Electronics & Communications Abstracts Engineered Materials Abstracts Materials Business File Mechanical & Transportation Engineering Abstracts Solid State and Superconductivity Abstracts METADEX Technology Research Database ProQuest SciTech Collection ProQuest Technology Collection ProQuest Natural Science Collection Materials Science & Engineering Collection ProQuest Central (Alumni) ProQuest One Sustainability ProQuest Central UK/Ireland ProQuest Central Essentials Biological Science Collection ProQuest Central Technology Collection Natural Science Collection ProQuest One Community College ProQuest Materials Science Collection ProQuest Central ANTE: Abstracts in New Technology & Engineering Engineering Research Database ProQuest Central Student Aerospace Database Copper Technical Reference Library SciTech Premium Collection Materials Research Database ProQuest Computer Science Collection Materials Science Database Civil Engineering Abstracts Advanced Technologies Database with Aerospace Biological Sciences Computer and Information Systems Abstracts Academic Computer and Information Systems Abstracts Professional Biological Science Database Biotechnology and BioEngineering Abstracts Materials Science Collection ProQuest Central Premium ProQuest One Academic (New) Publicly Available Content Database ProQuest One Academic Middle East (New) ProQuest One Academic Eastern Edition (DO NOT USE) ProQuest One Applied & Life Sciences ProQuest One Academic ProQuest One Academic UKI Edition ProQuest Central China MEDLINE - Academic PubMed Central (Full Participant titles) Directory of Open Access Journals |
| DatabaseTitle | CrossRef Publicly Available Content Database Materials Research Database ProQuest Central Student ProQuest Central Essentials ProQuest Computer Science Collection Computer and Information Systems Abstracts SciTech Premium Collection ProQuest Central China Materials Business File ProQuest One Applied & Life Sciences ProQuest One Sustainability Engineered Materials Abstracts Natural Science Collection Biological Science Collection ProQuest Central (New) ANTE: Abstracts in New Technology & Engineering Aluminium Industry Abstracts ProQuest Biological Science Collection ProQuest One Academic Eastern Edition Electronics & Communications Abstracts ProQuest Technology Collection Ceramic Abstracts Biological Science Database Biotechnology and BioEngineering Abstracts ProQuest One Academic UKI Edition Solid State and Superconductivity Abstracts Engineering Research Database ProQuest One Academic ProQuest One Academic (New) Technology Collection Technology Research Database Computer and Information Systems Abstracts – Academic ProQuest One Academic Middle East (New) Mechanical & Transportation Engineering Abstracts Materials Science Collection ProQuest Central (Alumni Edition) ProQuest One Community College ProQuest Natural Science Collection ProQuest Central Aerospace Database Copper Technical Reference Library Biotechnology Research Abstracts ProQuest Central Korea Materials Science Database Advanced Technologies Database with Aerospace ProQuest Materials Science Collection Civil Engineering Abstracts ProQuest SciTech Collection METADEX Computer and Information Systems Abstracts Professional Materials Science & Engineering Collection Corrosion Abstracts MEDLINE - Academic |
| DatabaseTitleList | Publicly Available Content Database MEDLINE - Academic Publicly Available Content Database |
| Database_xml | – sequence: 1 dbid: C6C name: Springer Nature OA Free Journals url: http://www.springeropen.com/ sourceTypes: Publisher – sequence: 2 dbid: DOA name: DOAJ Directory of Open Access Journals url: https://www.doaj.org/ sourceTypes: Open Website – sequence: 3 dbid: 8FG name: ProQuest Technology Collection url: https://search.proquest.com/technologycollection1 sourceTypes: Aggregation Database |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1556-276X |
| EndPage | 6 |
| ExternalDocumentID | oai_doaj_org_article_5715238dd34b40e189e23459076c93c7 PMC6420527 10_1186_s11671_019_2933_y |
| GrantInformation_xml | – fundername: the Program of Shanghai Subject Chief Scientist grantid: 18XD1402800 – fundername: NSFC grantid: 61704030 and 61522404 – fundername: 02 State Key Project grantid: 2017ZX02315005 – fundername: ; grantid: 18XD1402800 – fundername: ; grantid: 61704030 and 61522404 – fundername: ; grantid: 2017ZX02315005 |
| GroupedDBID | -A0 .4S .86 .DC 0R~ 123 29M 2VQ 2WC 4.4 40G 5VS 6NX 8FE 8FG 8FH AAFWJ ABJCF ABMNI ACGFO ACGFS ACIWK ACPRK ADBBV ADINQ ADRAZ AEGXH AENEX AEUYN AFGCZ AFKRA AFPKN AFRAH AHBYD AHSBF AHYZX ALMA_UNASSIGNED_HOLDINGS AMKLP AMTXH AOIJS ARCSS BAPOH BBNVY BCNDV BENPR BGLVJ BGNMA BHPHI C1A C24 C6C CAG CCPQU COF CS3 D1I DU5 EBS EDO EJD F5P GROUPED_DOAJ GX1 H13 HCIFZ HH5 HYE HZ~ I09 IAO IPNFZ IZQ KB. KDC KQ8 LK8 M48 M4Y M7P MM. M~E NU0 O5R O5S O9- OK1 P2P PDBOC PGMZT PIMPY PROAC RIG RNS RPM RPX RSV SCM SDH SOJ TR2 TSK TUS U2A ~KM AAYXX CITATION OVT PHGZM PHGZT 7QF 7QO 7QQ 7SC 7SE 7SP 7SR 7TA 7TB 7U5 8BQ 8FD ABUWG AZQEC DWQXO F28 FR3 GNUQQ H8D H8G JG9 JQ2 KR7 L7M L~C L~D P64 PKEHL PQEST PQGLB PQQKQ PQUKI PRINS 7X8 5PM PUEGO |
| ID | FETCH-LOGICAL-c541t-311a6485bfa0fe4fad42b9fba54555a3d19e0ca2a1afba830abf5f96ca47a95c3 |
| IEDL.DBID | BENPR |
| ISSN | 1931-7573 |
| IngestDate | Wed Aug 27 01:28:39 EDT 2025 Thu Aug 21 17:42:50 EDT 2025 Fri Jul 11 16:10:46 EDT 2025 Fri Jul 25 10:58:44 EDT 2025 Fri Jul 25 10:58:11 EDT 2025 Tue Jul 01 01:14:04 EDT 2025 Thu Apr 24 22:50:50 EDT 2025 Fri Feb 21 02:34:35 EST 2025 |
| IsDoiOpenAccess | true |
| IsOpenAccess | true |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 1 |
| Keywords | Atomic layer deposition Low-temperature process Flexible electronics Synaptic plasticity |
| Language | English |
| License | Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c541t-311a6485bfa0fe4fad42b9fba54555a3d19e0ca2a1afba830abf5f96ca47a95c3 |
| Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 content type line 23 |
| ORCID | 0000-0002-7145-7564 |
| OpenAccessLink | https://www.proquest.com/docview/2191753918?pq-origsite=%requestingapplication% |
| PMID | 30877593 |
| PQID | 2191753918 |
| PQPubID | 2034687 |
| PageCount | 6 |
| ParticipantIDs | doaj_primary_oai_doaj_org_article_5715238dd34b40e189e23459076c93c7 pubmedcentral_primary_oai_pubmedcentral_nih_gov_6420527 proquest_miscellaneous_2193169550 proquest_journals_3196710673 proquest_journals_2191753918 crossref_primary_10_1186_s11671_019_2933_y crossref_citationtrail_10_1186_s11671_019_2933_y springer_journals_10_1186_s11671_019_2933_y |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2019-03-15 |
| PublicationDateYYYYMMDD | 2019-03-15 |
| PublicationDate_xml | – month: 03 year: 2019 text: 2019-03-15 day: 15 |
| PublicationDecade | 2010 |
| PublicationPlace | New York |
| PublicationPlace_xml | – name: New York – name: Heidelberg |
| PublicationTitle | Nanoscale research letters |
| PublicationTitleAbbrev | Nanoscale Res Lett |
| PublicationYear | 2019 |
| Publisher | Springer US Springer Nature B.V SpringerOpen |
| Publisher_xml | – name: Springer US – name: Springer Nature B.V – name: SpringerOpen |
| References | Kim, Lee (CR2) 2018; 12 Wu, Wang, Luo, Banerjee, Cao, Zhang, Wu, Liu, Li, Liu (CR29) 2018; 10 Wang, Zhu, Wang, Ma, Hao, Chen (CR27) 2016; 12 Fuller, Gabaly, Léonard, Agarwal, Plimpton, Jacobs-Gedrim, James, Marinella, Talin (CR5) 2017; 29 Chen, Wang, Dai, Cha, Zhu, Sun, Ding, Zhou, Chua, Zhang (CR21) 2018; 10 Yao, Wu, Gao, Eryilmaz, Huang, Zhang, Zhang, Deng, Shi, Wong, Qian (CR11) 2017; 8 Sun, Oh, Choi, Seo, Oh, Lee, Lee, Yoo, Cho, Park (CR19) 2018; 28 Yan, Zhang, Chen, Li, Wang, Liu, Lu, Chen, Wu, Zhou (CR6) 2018; 28 He, Yang, Zhou, Huang, Xiong, Gan, Zhai, Guo (CR8) 2018; 14 Wang, He, Liu, Chen, Zhu, Sun, Ding, Zhou, Zhang (CR9) 2018; 10 Li, Liu, Wan, Liu, Wang, Qi, Yu, Cai, Xiao, Zeng, Chen (CR12) 2018; 30 Yoong, Wu, Zhao, Wang, Guo, Xiao, Zhang, Yang, Pennycook, Deng, Yan, Chen (CR23) 2018; 28 Wang, Yu, Chen, Liu, Zhu, Sun, Ding, Zhou, Zhang (CR20) 2017 Li, Hu, Li, Jiang, Ge, Montgomery, Zhang, Song, Dávila, Graves, Li, Strachan, Lin, Wang, Barnell, Wu, Williams, Yang, Xia (CR3) 2018; 1 Yan, Wang, Zhao, Li, Wang, Zhang, Lu, Ren (CR14) 2018; 113 Abbott, Regehr (CR30) 2004; 431 Shi, Ha, Zhou, Schoofs, Ramanathan (CR4) 2013; 4 Yang, Shang, Liu, Shi, Shen, Yu, Li, Sun (CR15) 2017; 29 Kim, Choi, Lim, Yoon, Lee, Kim, Choi (CR10) 2017; 11 Yu, Guan, Wong (CR28) 2012; 59 Wu, Kim, Choi, Strukov, Yang (CR7) 2017; 8 Oh, Kim, Kwak, Song, Woo, Jeon, Yoo, Hwang (CR22) 2017; 38 Lin, Zeng, Xu, Wang, Zhao, Liu, Ma, Liu (CR24) 2018; 4 Tan, Yang, Terabe, Yin, Zhang, Guo (CR16) 2015; 28 John, Ko, Kulkarni, Tiwari, Chien, Ing, Leong, Mathews (CR25) 2017; 13 Dai, Wu, Liu, Chu, Wang, Yang, Huang (CR26) 2018; 10 van de Burgt, Lubberman, Fuller, Keene, Faria, Agarwal, Marinella, Alec Talin, Salleo (CR17) 2017; 16 Jiang, Guo, Wan, Yang, Xie, Niu, Yang, He, Gao, Wan (CR18) 2017; 13 Zhang, Liu, Zhao, Wu, Wu, Wang, Cao, Fang, Lv, Long, Liu, Liu (CR31) 2017; 38 Jeong, Kim, Kim, Choi, Hwang (CR1) 2016; 2 Wang, Zhang, Chen, Cao, Li, Wu (CR13) 2017; 12 M-K Kim (2933_CR2) 2018; 12 CS Yang (2933_CR15) 2017; 29 H-K He (2933_CR8) 2018; 14 J Jiang (2933_CR18) 2017; 13 T Wang (2933_CR20) 2017 B Li (2933_CR12) 2018; 30 S Kim (2933_CR10) 2017; 11 Y Lin (2933_CR24) 2018; 4 C Li (2933_CR3) 2018; 1 Y Burgt van de (2933_CR17) 2017; 16 Q Wu (2933_CR29) 2018; 10 L Chen (2933_CR21) 2018; 10 DS Jeong (2933_CR1) 2016; 2 HY Yoong (2933_CR23) 2018; 28 H Wang (2933_CR27) 2016; 12 EJ Fuller (2933_CR5) 2017; 29 RA John (2933_CR25) 2017; 13 S Dai (2933_CR26) 2018; 10 P Yao (2933_CR11) 2017; 8 LF Abbott (2933_CR30) 2004; 431 X Zhang (2933_CR31) 2017; 38 L-G Wang (2933_CR13) 2017; 12 J Sun (2933_CR19) 2018; 28 S Oh (2933_CR22) 2017; 38 X Yan (2933_CR14) 2018; 113 Z-H Tan (2933_CR16) 2015; 28 C Wu (2933_CR7) 2017; 8 S Yu (2933_CR28) 2012; 59 T-Y Wang (2933_CR9) 2018; 10 X Yan (2933_CR6) 2018; 28 J Shi (2933_CR4) 2013; 4 |
| References_xml | – volume: 12 start-page: 65 year: 2017 ident: CR13 article-title: Synaptic plasticity and learning behaviors mimicked in single inorganic synapses of Pt/HfOx/ZnOx/TiN memristive system publication-title: Nanoscale Res Lett doi: 10.1186/s11671-017-1847-9 – volume: 28 start-page: 1806037 year: 2018 ident: CR23 article-title: Epitaxial ferroelectric Hf0.5Zr0.5O2 thin films and their implementations in memristors for brain-inspired computing publication-title: Adv Funct Mater doi: 10.1002/adfm.201806037 – volume: 28 start-page: 1804397 year: 2018 ident: CR19 article-title: Optoelectronic synapse based on IGZO-alkylated graphene oxide hybrid structure publication-title: Adv Funct Mater doi: 10.1002/adfm.201804397 – volume: 1 start-page: 52 year: 2018 end-page: 59 ident: CR3 article-title: Analogue signal and image processing with large memristor crossbars publication-title: Nat Electron doi: 10.1038/s41928-017-0002-z – volume: 13 start-page: 1700933 year: 2017 ident: CR18 article-title: 2D MoS2 neuromorphic devices for brain-like computational systems publication-title: Small doi: 10.1002/smll.201700933 – volume: 12 start-page: 3360 year: 2016 end-page: 3365 ident: CR27 article-title: Ultra-lightweight resistive switching memory devices based on silk fibroin publication-title: Small doi: 10.1002/smll.201600893 – volume: 8 start-page: 752 year: 2017 ident: CR7 article-title: Flexible three-dimensional artificial synapse networks with correlated learning and trainable memory capability publication-title: Nat Commun doi: 10.1038/s41467-017-00803-1 – volume: 113 start-page: 013503 year: 2018 ident: CR14 article-title: Artificial electronic synapse characteristics of a Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor device on flexible stainless steel substrate publication-title: Appl Phys Lett doi: 10.1063/1.5027776 – volume: 4 start-page: 1800373 year: 2018 ident: CR24 article-title: Transferable and flexible artificial memristive synapse based on WOx Schottky junction on arbitrary substrates publication-title: Adv Electron Mater doi: 10.1002/aelm.201800373 – volume: 10 start-page: 21472 year: 2018 end-page: 21480 ident: CR26 article-title: Light-stimulated synaptic devices utilizing interfacial effect of organic field-effect transistors publication-title: ACS Appl Mater Interfaces doi: 10.1021/acsami.8b05036 – start-page: 203 year: 2017 end-page: 206 ident: CR20 publication-title: Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM – volume: 59 start-page: 1183 year: 2012 end-page: 1188 ident: CR28 article-title: On the switching parameter variation of metal oxide RRAM—part II: model corroboration and device design strategy publication-title: IEEE Trans Electron Devices doi: 10.1109/TED.2012.2184544 – volume: 29 start-page: 1700906 year: 2017 ident: CR15 article-title: A synaptic transistor based on quasi-2D molybdenum oxide publication-title: Adv Mater doi: 10.1002/adma.201700906 – volume: 28 start-page: 377 year: 2015 end-page: 384 ident: CR16 article-title: Synaptic metaplasticity realized in oxide memristive devices publication-title: Adv Mater doi: 10.1002/adma.201503575 – volume: 29 start-page: 1604310 year: 2017 ident: CR5 article-title: Li-ion synaptic transistor for low power analog computing publication-title: Adv Mater doi: 10.1002/adma.201604310 – volume: 431 start-page: 796 year: 2004 ident: CR30 article-title: Synaptic computation publication-title: Nature doi: 10.1038/nature03010 – volume: 11 start-page: 2814 year: 2017 end-page: 2822 ident: CR10 article-title: Pattern recognition using carbon nanotube synaptic transistors with an adjustable weight update protocol publication-title: ACS Nano doi: 10.1021/acsnano.6b07894 – volume: 12 start-page: 1680 year: 2018 end-page: 1687 ident: CR2 article-title: Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics publication-title: ACS Nano doi: 10.1021/acsnano.7b08331 – volume: 10 start-page: 37345 year: 2018 end-page: 37352 ident: CR9 article-title: Flexible electronic synapses for face recognition application with multimodulated conductance states publication-title: ACS Appl Mater Interfaces doi: 10.1021/acsami.8b16841 – volume: 10 start-page: 15826 year: 2018 end-page: 15833 ident: CR21 article-title: Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications publication-title: Nanoscale doi: 10.1039/C8NR04734K – volume: 2 start-page: 1600090 year: 2016 ident: CR1 article-title: Memristors for energy-efficient new computing paradigms publication-title: Adv Electron Mater doi: 10.1002/aelm.201600090 – volume: 14 start-page: 1800079 year: 2018 ident: CR8 article-title: Photonic potentiation and electric habituation in ultrathin memristive synapses based on monolayer MoS2 publication-title: Small doi: 10.1002/smll.201800079 – volume: 13 start-page: 1701193 year: 2017 ident: CR25 article-title: Flexible ionic-electronic hybrid oxide synaptic TFTs with programmable dynamic plasticity for brain-inspired neuromorphic computing publication-title: Small doi: 10.1002/smll.201701193 – volume: 8 start-page: 15199 year: 2017 ident: CR11 article-title: Face classification using electronic synapses publication-title: Nat Commun doi: 10.1038/ncomms15199 – volume: 16 start-page: 414 year: 2017 ident: CR17 article-title: A non-volatile organic electrochemical device as a low-voltage artificial synapse for neuromorphic computing publication-title: Nat Mater doi: 10.1038/nmat4856 – volume: 10 start-page: 5875 year: 2018 end-page: 5881 ident: CR29 article-title: Full imitation of synaptic metaplasticity based on memristor devices publication-title: Nanoscale doi: 10.1039/C8NR00222C – volume: 28 start-page: 1803728 year: 2018 ident: CR6 article-title: Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning publication-title: Adv Funct Mater doi: 10.1002/adfm.201803728 – volume: 30 start-page: 1706395 year: 2018 ident: CR12 article-title: Mediating short-term plasticity in an artificial memristive synapse by the orientation of silica mesopores publication-title: Adv Mater doi: 10.1002/adma.201706395 – volume: 4 start-page: 2676 year: 2013 ident: CR4 article-title: A correlated nickelate synaptic transistor publication-title: Nat Commun doi: 10.1038/ncomms3676 – volume: 38 start-page: 1208 year: 2017 end-page: 1211 ident: CR31 article-title: Emulating short-term and long-term plasticity of bio-synapse based on cu/a-Si/Pt memristor publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2017.2722463 – volume: 38 start-page: 732 year: 2017 end-page: 735 ident: CR22 article-title: HfZrOx-based ferroelectric synapse device with 32 levels of conductance states for neuromorphic applications publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2017.2698083 – volume: 30 start-page: 1706395 year: 2018 ident: 2933_CR12 publication-title: Adv Mater doi: 10.1002/adma.201706395 – volume: 13 start-page: 1701193 year: 2017 ident: 2933_CR25 publication-title: Small doi: 10.1002/smll.201701193 – volume: 12 start-page: 65 year: 2017 ident: 2933_CR13 publication-title: Nanoscale Res Lett doi: 10.1186/s11671-017-1847-9 – volume: 29 start-page: 1700906 year: 2017 ident: 2933_CR15 publication-title: Adv Mater doi: 10.1002/adma.201700906 – volume: 2 start-page: 1600090 year: 2016 ident: 2933_CR1 publication-title: Adv Electron Mater doi: 10.1002/aelm.201600090 – volume: 12 start-page: 1680 year: 2018 ident: 2933_CR2 publication-title: ACS Nano doi: 10.1021/acsnano.7b08331 – volume: 8 start-page: 752 year: 2017 ident: 2933_CR7 publication-title: Nat Commun doi: 10.1038/s41467-017-00803-1 – volume: 28 start-page: 377 year: 2015 ident: 2933_CR16 publication-title: Adv Mater doi: 10.1002/adma.201503575 – volume: 10 start-page: 15826 year: 2018 ident: 2933_CR21 publication-title: Nanoscale doi: 10.1039/C8NR04734K – volume: 1 start-page: 52 year: 2018 ident: 2933_CR3 publication-title: Nat Electron doi: 10.1038/s41928-017-0002-z – volume: 4 start-page: 2676 year: 2013 ident: 2933_CR4 publication-title: Nat Commun doi: 10.1038/ncomms3676 – volume: 28 start-page: 1804397 year: 2018 ident: 2933_CR19 publication-title: Adv Funct Mater doi: 10.1002/adfm.201804397 – volume: 10 start-page: 37345 year: 2018 ident: 2933_CR9 publication-title: ACS Appl Mater Interfaces doi: 10.1021/acsami.8b16841 – volume: 113 start-page: 013503 year: 2018 ident: 2933_CR14 publication-title: Appl Phys Lett doi: 10.1063/1.5027776 – volume: 29 start-page: 1604310 year: 2017 ident: 2933_CR5 publication-title: Adv Mater doi: 10.1002/adma.201604310 – volume: 10 start-page: 5875 year: 2018 ident: 2933_CR29 publication-title: Nanoscale doi: 10.1039/C8NR00222C – volume: 28 start-page: 1803728 year: 2018 ident: 2933_CR6 publication-title: Adv Funct Mater doi: 10.1002/adfm.201803728 – start-page: 203 volume-title: Atomic layer deposited Hf0.5Zr0.5O2-based flexible RRAM year: 2017 ident: 2933_CR20 – volume: 28 start-page: 1806037 year: 2018 ident: 2933_CR23 publication-title: Adv Funct Mater doi: 10.1002/adfm.201806037 – volume: 16 start-page: 414 year: 2017 ident: 2933_CR17 publication-title: Nat Mater doi: 10.1038/nmat4856 – volume: 38 start-page: 732 year: 2017 ident: 2933_CR22 publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2017.2698083 – volume: 59 start-page: 1183 year: 2012 ident: 2933_CR28 publication-title: IEEE Trans Electron Devices doi: 10.1109/TED.2012.2184544 – volume: 4 start-page: 1800373 year: 2018 ident: 2933_CR24 publication-title: Adv Electron Mater doi: 10.1002/aelm.201800373 – volume: 38 start-page: 1208 year: 2017 ident: 2933_CR31 publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2017.2722463 – volume: 12 start-page: 3360 year: 2016 ident: 2933_CR27 publication-title: Small doi: 10.1002/smll.201600893 – volume: 8 start-page: 15199 year: 2017 ident: 2933_CR11 publication-title: Nat Commun doi: 10.1038/ncomms15199 – volume: 431 start-page: 796 year: 2004 ident: 2933_CR30 publication-title: Nature doi: 10.1038/nature03010 – volume: 14 start-page: 1800079 year: 2018 ident: 2933_CR8 publication-title: Small doi: 10.1002/smll.201800079 – volume: 11 start-page: 2814 year: 2017 ident: 2933_CR10 publication-title: ACS Nano doi: 10.1021/acsnano.6b07894 – volume: 10 start-page: 21472 year: 2018 ident: 2933_CR26 publication-title: ACS Appl Mater Interfaces doi: 10.1021/acsami.8b05036 – volume: 13 start-page: 1700933 year: 2017 ident: 2933_CR18 publication-title: Small doi: 10.1002/smll.201700933 |
| SSID | ssj0047076 |
| Score | 2.4159265 |
| Snippet | Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system. Based on... Abstract Artificial synapses are the fundamental of building a neuron network for neuromorphic computing to overcome the bottleneck of the von Neumann system.... |
| SourceID | doaj pubmedcentral proquest crossref springer |
| SourceType | Open Website Open Access Repository Aggregation Database Enrichment Source Index Database Publisher |
| StartPage | 102 |
| SubjectTerms | Applications of Atomic Layer Deposition Artificial intelligence Atomic layer deposition Atomic layer epitaxy Chemistry and Materials Science Computation Conductance Electrodes Filaments Flexible electronics Learning Low temperature Low-temperature process Materials Science Memristors Molecular Medicine Nano Express Nanochemistry Nanoscale Science and Technology Nanotechnology Nanotechnology and Microengineering Neuromorphic computing Plasticity Polyethylene terephthalate Resistance Synapses Synaptic plasticity |
| SummonAdditionalLinks | – databaseName: Directory of Open Access Journals dbid: DOA link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV1Jb9QwFLZQT3BArGKgICNxApnGa-JjWUYj1AJSW6niYtmOTZFKBk3Tw_x73nMyQ1OxXLjkECeO5bd-8fNnQl5kI7gJJjIfjGJK448myQMDf4nxWtlscb_z4UezOFEfTvXplaO-sCZsoAceJg4AO0QY2bStVEFViTc2Cak0YDoTrYxlHznEvA2YGnywqqtyrBxkJ5zVupbjeiZvzN4FrjwghLYMQp1k60lEKsT9k2zzeq3ktQXTEofmd8jtMYGk-8PA75IbqbtHbl2hFbxP0n6Pe43pgYd8mr5LpTArtXSRq9f6ywounwTD8NXSOfJhhvNED9P3wjKwovhnlh6dQVq-d7DsvrJj8N30aN15cC6RfoZsGwux-_UDcjJ_f_x2wcbjFFjUivfgbbk3qtEh-yonlX2rRLA5eBCK1l623KYqeuG5h5uNrHzIOlsTvaq91VE-JDvdskuPCOXBeOgBumkBvgUOXSWw_JitFyoJPiPVZkpdHLnG8ciLc1cwR2PcIAUHUnAoBbeekZfbV34MRBt_e_gNymn7IHJklxugOW7UHPcvzZmR3Y2U3Wi4F04gftXS8ua3zeiwamTdkzPyfNsMFonLLL5Ly8vSheTGAvSbkXqiPJPxTlu6b2eF2xvgYKUFjO3VRs1-ffyP0_H4f0zHE3JToFFgraLeJTv96jI9hYSrD8-Kbf0EktMjkw priority: 102 providerName: Directory of Open Access Journals – databaseName: Scholars Portal Journals: Open Access dbid: M48 link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1Lb9QwELZKucAB8RSBgozECeQ2jh-JDwiVx2qFuoDUrlRxsezEaZGWLKSpRP49M95kYaullxziZOJ43hnnG0Je1jrj2uuSOa8lkwo_NAnuGdhL9NfS1Ab_d5591tO5_HSqTnfI2N5qWMCLrakd9pOat4v937_6t6Dwb6LCF_rgAmsJmBQbBs5LsP4GuQmOKUc9ncl1UUHmaew1ByELZ7nKxVDk3Epiw01FNP-NEPTqBsorVdTonCZ3yZ0hqqSHKzG4R3ZCc5_c_gdr8AEJhx3-gEyPHATZ9EOIu7VCRad1uq--tXD4kjH0aRWdIEimXwQ6Cz8i9EBL8XMtPT6HZTo4WjZn7AQMOj3uGwcWp6RfIQTH3dld_5DMJx9P3k_Z0GOBlUryDkwwd1oWytcurYOsXSUzb2rvgFNKOVFxE9LSZY47OFmI1Pla1UaXTubOqFI8IrvNsgmPCeVeO6AAZCrI6TwHUgHMQVkbl8mQ8YSk45LacgAgxz4YCxsTkULbFRcscMEiF2yfkFfrW36u0Deuu_gd8ml9IQJnxxPL9swOemhVDgGLKKpKSC_TwAsTMiGVAdEojSjzhOyNXLajMNoMk1olDC-2DqMVyxGKTyTkxXoY1BRrL64Jy8tIQnBtIB9MSL4hPBvz3Rxpvp9HwG_IEVOVwdxej2L29-H_XY4n17_JU3IrQ3HHrYlqj-x27WV4BvFV559HrfkDG0ggCQ priority: 102 providerName: Scholars Portal – databaseName: Springer Open Access Hybrid - NESLI2 2011-2012 dbid: 40G link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwELagXOCAeIrQgozECWQaPxMfy2NZoRaQ2koVF8tO7LZSyaLd9LD_vjPeZGGrgsQlh9iZWB7PyzP-TMjrZAQ3wTTMB6OY0rjRJHlgoC_RXiubLJ53Pvhqpsfqy4k-Gc5xL8Zq9zElmTV1Fuva7C4wY4Chr2VgoiRb3iZ3EE0M67hU-XlUv6oq841y4JhwVulKDqnMG0lsGKOM2b_haF4vk7yWK80maPKA3B98R7q3YvZDcit2j8i9PxAFH5O41-MxY7rvwZWmH2OuyYotnabynf4xh8c3wdBytXSCUJjhItKD-DMDDMwpbsrSwzPwyHf3Z90pOwK1TQ-XnQe90tDv4GhjDXa_fEKOJ5-OPkzZcJMCa7TiPSha7o2qdUi-TFEl3yoRbAoe-KG1ly23sWy88NzDy1qWPiSdrGm8qrzVjXxKtrpZF58RyoPxQAHItBC5BQ6kIgh9k6wXKgpekHKcUtcMMON428WFy-FGbdyKCw644JALblmQN-tPfq0wNv7V-T3yad0R4bHzi9n81A3S5nQFboms21aqoMrIaxuFVNrC0misbKqC7IxcdoPMLpzA0FVLy-sbm1FXVQi4Jwvyat0MwogZFt_F2WUmIbmxEPUVpNpYPBvj3Wzpzs8yrDdEgqUWMLa34zL7_fO_Tsfz_-q9Te4KXP1Yj6h3yFY_v4wvwKnqw8ssRFd1jhm_ priority: 102 providerName: Springer Nature |
| Title | Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity |
| URI | https://link.springer.com/article/10.1186/s11671-019-2933-y https://www.proquest.com/docview/2191753918 https://www.proquest.com/docview/3196710673 https://www.proquest.com/docview/2193169550 https://pubmed.ncbi.nlm.nih.gov/PMC6420527 https://doaj.org/article/5715238dd34b40e189e23459076c93c7 |
| Volume | 14 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3db9MwELfY9gIPiE9RGJOReAKZxZ-Jn1BX1lVoHRNbpYqXyHacDWmko-0e-t9z56YdnWAvJyVO3DR3_t2HL3eEvK-N4MabwJw3iimNgSbJPQO8RH2tbG3xe-fhiRmM1NexHrcBt1mbVrnCxATU1SRgjHxfoGOhpeXF5-vfDLtG4e5q20Jji-wABBfgfO0cHJ6cfl9hscqz1F4OrBTOcp3Ldl-TF2Z_hjsQ6EpbBipPssWGZkoF_Deszrs5k3c2TpM-6j8hj1tDknaXnH9KHsTmGXn0V3nB5yR25_jNMT12YFfTLzElaMWKDursk_4xBfJNMFRjFe1jXUx_Fekw_krVBqYUI7T07BLM8_3jSXPBzgHD6dmicQAygZ6C1Y0J2fPFCzLqH573Bqxtq8CCVnwOqMudUYX2tcvqqGpXKeFt7R0wR2snK25jFpxw3MHJQmbO17q2JjiVO6uDfEm2m0kTXxHKvXEwA0xTgRvnOUwVAQFCbZ1QUfAOyVavtAxtzXFsfXFVJt-jMOWSCyVwoUQulIsO-bC-5XpZcOO-iw-QT-sLsVZ2OjGZXpTt0it1DjaKLKpKKq-yyAsbhVTagmgEK0PeIbsrLpftAp6Vt-L2z2EErhyr78kOebcehpWJ2y2uiZObNIXkxoIL2CH5hvBsPO_mSPPzMtX4Brcw0wKe7eNKzG5__L-v4_X9_-QNeShQ3DEbUe-S7fn0Jr4Fk2ru98iWyo6AFn2gyzUERz3T20tBCqBHYw50qAqgI9H9A0QhJGo |
| linkProvider | ProQuest |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV1LbxMxELZKOQAHxFMEChgJLqAl6-euDwgVSkhpUpCaShUXY-96W6SyKUkqlD_Fb2TG2U1JBb31ksN6M3E8429mPOMZQp5XmjPtdZE4r2UiFR40CeYTwEvU19JUBu87D3d1f19-OlAHa-R3excG0ypbTIxAXY4LPCPvcnQslDAsf3vyM8GuURhdbVtoLMRiJ8x_gcs2fbO9Bfx9wXnvw-h9P2m6CiSFkmwGoMOclrnylUurICtXSu5N5R3MTSknSmZCWjjumIOHuUidr1RldOFk5owqBNC9Qq5KIQzuqLz3sUV-maWxmR3YRCzJVCaaKCrLdXeK8Q503E0CClYk8xU9GNsFrNi45zM0z4Vpo_br3SI3G7OVbi7k7DZZC_UdcuOvYoZ3Sdic4Q1nOnBgxdOtENPBQkn7VfpafZ3Ax2eeoNIsaQ-rcPrjQIfhR6xtMKF4Hkz3jsAZ6A7G9WEyAo1B9-a1A0gr6Bew8TH9eza_R_YvZbnvk_V6XIcHhDKvHVAAMiU4jZ4BqQB4U1TGcRk465C0XVJbNBXOsdHGsY2eTq7tggsWuGCRC3beIS-XXzlZlPe46OV3yKfli1iZOz4YTw5ts9GtysAiEnlZCullGlhuAhdSGRCNwogi65CNlsu2gYupPRPufw4jTGZY6090yLPlMOAABndcHcankYRg2oDD2SHZivCszHd1pP5-FCuKgxOaKg5ze9WK2dmP_3c5Hl78T56Sa_3RcGAH27s7j8h1jqKPeZBqg6zPJqfhMRhzM_8k7iBKvl32lv0DSPpb3g |
| linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwtV3db9MwELdGJyF4QHyKwgAjwQvINP5K4geENrqqY12p2CZNvBg7cTakkY62E-q_xl_HXZp0dIK97aUPcXp1fee7-_nOd4S8KmLBYx9nzPlYMaXxoElyz0Bfor1WpjB433lvGPcP1acjfbRGfjd3YTCtstGJlaLOxxmekXcEAgstDU87RZ0WMer2Ppz9ZNhBCiOtTTuNhYjshvkvgG_T9ztd4PVrIXrbBx_7rO4wwDKt-AwUEHexSrUvXFQEVbhcCW8K72CeWjuZcxOizAnHHTxMZeR8oQsTZ04lzuhMAt0bZD0BVBS1yPrW9nD0pbEDKomq1nbgIXGW6ETWMVWexp0pRj8QxhsG5lay-YpVrJoHrHi8l_M1LwVtK1vYu0vu1E4s3VxI3T2yFsr75PZfpQ0fkLA5w_vOdODAp6fdUCWHhZz2i-id_jqBj8-CoQnNaQ9rcvrTQPfCj6rSwYTi6TDdPwFo0BmMy2N2APaD7s9LBwouoyPw-DEZfDZ_SA6vZcEfkVY5LsNjQrmPHVAAMjlASM-BVADtkxXGCRUEb5OoWVKb1fXOse3Gqa1wTxrbBRcscMEiF-y8Td4sv3K2KPZx1ctbyKfli1inu3ownhzbettbnYB_JNM8l8qrKPDUBCGVNiAamZFZ0iYbDZdtrTym9kLU_zmMSjPByn-yTV4uh0ErYKjHlWF8XpGQPDYAP9skWRGelfmujpTfT6r64gBJIy1gbm8bMbv48f8ux5Or_8kLchO2qx3sDHefklsCJR-TIvUGac0m5-EZeHYz_7zeQpR8u-5d-wdIJGFw |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Atomic+Layer+Deposited+Hf0.5Zr0.5O2-based+Flexible+Memristor+with+Short%2FLong-Term+Synaptic+Plasticity&rft.jtitle=Nanoscale+research+letters&rft.au=Tian-Yu%2C+Wang&rft.au=Jia-Lin%2C+Meng&rft.au=Zhen-Yu%2C+He&rft.au=Chen%2C+Lin&rft.date=2019-03-15&rft.pub=Springer+Nature+B.V&rft.issn=1931-7573&rft.eissn=1556-276X&rft.volume=14&rft.issue=1&rft.spage=1&rft.epage=6&rft_id=info:doi/10.1186%2Fs11671-019-2933-y&rft.externalDBID=HAS_PDF_LINK |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1931-7573&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1931-7573&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1931-7573&client=summon |