APA (7th ed.) Citation

Wang, T., Meng, J., He, Z., Chen, L., Zhu, H., Sun, Q., . . . Zhang, D. W. (2019). Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity. Nanoscale research letters, 14(1), 102-6. https://doi.org/10.1186/s11671-019-2933-y

Chicago Style (17th ed.) Citation

Wang, Tian-Yu, Jia-Lin Meng, Zhen-Yu He, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang. "Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity." Nanoscale Research Letters 14, no. 1 (2019): 102-6. https://doi.org/10.1186/s11671-019-2933-y.

MLA (9th ed.) Citation

Wang, Tian-Yu, et al. "Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity." Nanoscale Research Letters, vol. 14, no. 1, 2019, pp. 102-6, https://doi.org/10.1186/s11671-019-2933-y.