Twisted oxide lateral homostructures with conjunction tunability
Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different mate...
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| Published in | Nature communications Vol. 13; no. 1; pp. 2565 - 10 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
10.05.2022
Nature Publishing Group Nature Portfolio |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.
It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability. |
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| AbstractList | Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films. Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability. It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability. Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films. It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability. Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial "blocks" with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films.Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial "blocks" with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films. |
| ArticleNumber | 2565 |
| Author | Chen, Yi-Chun Wei, Chia-Chun Chang, Yao-Wen Huang, Rong Zheng, Junding Chen, Tse-Ming Tzeng, Wen-Yen Luo, Chih-Wei Kuo, Chang-Yang Chiu, Chun-Chien Yang, Jan-Chi Chang, Kuo-En Chang, Chun-Fu Wu, Ping-Chun Zhong, Qilan Liou, Yi-De Duan, Chun-Gang Ho, Sheng-Zhu Tu, Chien-Ming Liu, Yu-Chen |
| Author_xml | – sequence: 1 givenname: Ping-Chun surname: Wu fullname: Wu, Ping-Chun organization: Department of Physics, National Cheng Kung University – sequence: 2 givenname: Chia-Chun surname: Wei fullname: Wei, Chia-Chun organization: Department of Physics, National Cheng Kung University – sequence: 3 givenname: Qilan surname: Zhong fullname: Zhong, Qilan organization: Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University – sequence: 4 givenname: Sheng-Zhu surname: Ho fullname: Ho, Sheng-Zhu organization: Department of Physics, National Cheng Kung University – sequence: 5 givenname: Yi-De surname: Liou fullname: Liou, Yi-De organization: Department of Physics, National Cheng Kung University – sequence: 6 givenname: Yu-Chen surname: Liu fullname: Liu, Yu-Chen organization: Department of Physics, National Cheng Kung University – sequence: 7 givenname: Chun-Chien surname: Chiu fullname: Chiu, Chun-Chien organization: Department of Physics, National Cheng Kung University – sequence: 8 givenname: Wen-Yen surname: Tzeng fullname: Tzeng, Wen-Yen organization: Department of Electrophysics, National Yang Ming Chiao Tung University – sequence: 9 givenname: Kuo-En surname: Chang fullname: Chang, Kuo-En organization: Department of Physics, National Cheng Kung University – sequence: 10 givenname: Yao-Wen surname: Chang fullname: Chang, Yao-Wen organization: Department of Physics, National Cheng Kung University – sequence: 11 givenname: Junding surname: Zheng fullname: Zheng, Junding organization: Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University – sequence: 12 givenname: Chun-Fu orcidid: 0000-0003-1803-2468 surname: Chang fullname: Chang, Chun-Fu organization: Max-Planck Institute for Chemical Physics of Solids – sequence: 13 givenname: Chien-Ming surname: Tu fullname: Tu, Chien-Ming organization: Department of Electrophysics, National Yang Ming Chiao Tung University – sequence: 14 givenname: Tse-Ming orcidid: 0000-0002-1972-8689 surname: Chen fullname: Chen, Tse-Ming organization: Department of Physics, National Cheng Kung University – sequence: 15 givenname: Chih-Wei orcidid: 0000-0002-6453-7435 surname: Luo fullname: Luo, Chih-Wei organization: Department of Electrophysics, National Yang Ming Chiao Tung University, National Synchrotron Radiation Research Center – sequence: 16 givenname: Rong orcidid: 0000-0002-2095-3883 surname: Huang fullname: Huang, Rong organization: Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University – sequence: 17 givenname: Chun-Gang surname: Duan fullname: Duan, Chun-Gang organization: Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University – sequence: 18 givenname: Yi-Chun orcidid: 0000-0001-9435-8596 surname: Chen fullname: Chen, Yi-Chun organization: Department of Physics, National Cheng Kung University – sequence: 19 givenname: Chang-Yang surname: Kuo fullname: Kuo, Chang-Yang organization: Department of Electrophysics, National Yang Ming Chiao Tung University, National Synchrotron Radiation Research Center – sequence: 20 givenname: Jan-Chi orcidid: 0000-0002-3549-4392 surname: Yang fullname: Yang, Jan-Chi email: janchiyang@phys.ncku.edu.tw organization: Department of Physics, National Cheng Kung University, Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/35538081$$D View this record in MEDLINE/PubMed |
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| Snippet | Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin... It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic... |
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| SubjectTerms | 140/146 147/136 147/137 639/301/119/544 639/301/119/996 639/301/930/1032 Complex systems Crystal structure Crystallinity Epitaxial growth Humanities and Social Sciences Interfaces Lateral stability multidisciplinary Phase stability Physical properties Science Science (multidisciplinary) Single crystals Substrates Thin films Topography Transmission electron microscopy |
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| Title | Twisted oxide lateral homostructures with conjunction tunability |
| URI | https://link.springer.com/article/10.1038/s41467-022-30321-8 https://www.ncbi.nlm.nih.gov/pubmed/35538081 https://www.proquest.com/docview/2661730426 https://www.proquest.com/docview/2662541538 https://pubmed.ncbi.nlm.nih.gov/PMC9090740 https://doaj.org/article/389747fe4fc04b479396688904c4e1e3 |
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