Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions

• Published in: Nature communications Vol. 9; no. 1; pp. 663 - 6
• Main Authors: Watanabe, K., Jinnai, B., Fukami, S., Sato, H., Ohno, H.
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 14.02.2018; Nature Publishing Group; Nature Portfolio
• Subjects: 147/137; 147/143; 639/166/987; 639/766/119/1001; 639/925/927/1062; Anisotropy; Computer memory; Humanities and Social Sciences; Magnetic anisotropy; Magnetic switching; Magnetization; Magnetoresistivity; multidisciplinary; Random access; Random access memory; Science; Science (multidisciplinary); Spintronics; Thermal stability; Tunnel junctions

Nanoscale magnetic tunnel junctions play a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin transfer torque and high thermal stability, along with a continuous red...