Vacancy cluster in ZnO films grown by pulsed laser deposition

• Published in: Scientific reports Vol. 9; no. 1; p. 3534
• Main Authors: Wang, Zilan, Luo, Caiqin, Anwand, W., Wagner, A., Butterling, M., Rahman, M. Azizar, Phillips, Matthew R., Ton-That, Cuong, Younas, M., Su, Shichen, Ling, Francis Chi-Chung
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 05.03.2019; Nature Publishing Group
• Subjects: 639/301/119/1000; 639/766/119/1002; Annealing; Electromagnetism; Energy; Humanities and Social Sciences; Lasers; Luminescence; Microscopy; multidisciplinary; Optical properties; Oxygen; Physics; Point defects; Pressure; Science; Science (multidisciplinary); Spectroscopy; Spectrum analysis; Zinc oxides

Undoped and Ga-doped ZnO films were grown on c-sapphire using pulsed laser deposition (PLD) at the substrate temperature of 600 °C. Positron annihilation spectroscopy study (PAS) shows that the dominant V Zn -related defect in the as-grown undoped ZnO grown with relative low oxygen pressure P(O 2 )...