Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature
We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (D it) near the conduction band edge (E C) of SiC (0001) MOS structures. The D it reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which ha...
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| Published in | AIP advances Vol. 7; no. 4; pp. 045008 - 045008-5 |
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| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Melville
American Institute of Physics
01.04.2017
AIP Publishing LLC |
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| ISSN | 2158-3226 2158-3226 |
| DOI | 10.1063/1.4980024 |
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| Abstract | We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (D
it) near the conduction band edge (E
C) of SiC (0001) MOS structures. The D
it reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which has been a standard in SiC MOS technologies, without introducing any foreign atoms into the interface/oxide. The generation of fast interface states, which have been pointed out as a problem of nitridation process, is suppressed in the case of Ar annealing. In the proposed method, the final D
it values are mainly determined by the Ar annealing temperature rather than the initial oxidation temperature. The D
it values are not sensitive to the cooling speed, which means that rapid cooling is not necessary in the proposed method. |
|---|---|
| AbstractList | We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (Dit) near the conduction band edge (EC) of SiC (0001) MOS structures. The Dit reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which has been a standard in SiC MOS technologies, without introducing any foreign atoms into the interface/oxide. The generation of fast interface states, which have been pointed out as a problem of nitridation process, is suppressed in the case of Ar annealing. In the proposed method, the final Dit values are mainly determined by the Ar annealing temperature rather than the initial oxidation temperature. The Dit values are not sensitive to the cooling speed, which means that rapid cooling is not necessary in the proposed method. We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (D it) near the conduction band edge (E C) of SiC (0001) MOS structures. The D it reduction effect is comparable to that of nitridation process (annealing in nitric oxide (NO)) which has been a standard in SiC MOS technologies, without introducing any foreign atoms into the interface/oxide. The generation of fast interface states, which have been pointed out as a problem of nitridation process, is suppressed in the case of Ar annealing. In the proposed method, the final D it values are mainly determined by the Ar annealing temperature rather than the initial oxidation temperature. The D it values are not sensitive to the cooling speed, which means that rapid cooling is not necessary in the proposed method. |
| Author | Kobayashi, Takuma Suda, Jun Kimoto, Tsunenobu |
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| Cites_doi | 10.7567/apex.9.051301 10.1063/1.126167 10.1063/1.4740068 10.1063/1.3432404 10.1109/55.43098 10.1063/1.4946863 10.4028/www.scientific.net/msf.858.599 10.1063/1.4891166 10.1063/1.1412579 10.1063/1.126311 10.1063/1.2898502 10.1109/ted.2014.2352117 10.1063/1.4967002 10.1063/1.4905781 10.1109/ted.2013.2237777 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f 10.1063/1.3673572 10.1109/ted.2014.2358260 |
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| References | Yano, Kanafuji, Osawa, Hatayama, Fuyuki (c12) 2015; 62 Katsu, Hosoi, Nanen, Kimoto, Shimura, Watanabe (c9) 2016; 858 Saks, Mani, Agarwal (c3) 2000; 76 Afanasev, Bassler, Pensl, Schulz (c19) 1997; 162 Yoshioka, Senzaki, Shimozato, Tanaka, Okumura (c4) 2015; 5 Baliga (c1) 1989; 10 Nakazawa, Okuda, Suda, Nakamura, Kimoto (c22) 2015; 62 Jamet, Dimitrijev, Tanner (c7) 2001; 90 Okamoto, Yano, Hatayama, Fuyuki (c11) 2010; 96 Kikuchi, Koji (c15) 2014; 105 Hosoi, Nagai, Sometani, Katsu, Takeda, Shimura, Takei, Watanabe (c14) 2016; 109 Okuda, Kobayashi, Kimoto, Suda (c13) 2016; 9 Penumatcha, Swandono, Cooper (c18) 2013; 60 Dhar, Chen, Mooney, Williams, Feldman (c10) 2008; 92 Chung, Tin, Williams, McDonald, Di Ventra, Pantelides, Feldman, Weller (c6) 2000; 76 Kobayashi, Nakazawa, Okuda, Suda, Kimoto (c5) 2016; 108 Yoshioka, Nakamura, Kimoto (c8) 2012; 112 Yoshioka, Nakamura, Kimoto (c21) 2012; 111 (2023061800260727000_c12) 2015; 62 (2023061800260727000_c3) 2000; 76 (2023061800260727000_c5) 2016; 108 (2023061800260727000_c7) 2001; 90 (2023061800260727000_c17) 1982 (2023061800260727000_c18) 2013; 60 (2023061800260727000_c19) 1997; 162 2023061800260727000_c20 (2023061800260727000_c9) 2016; 858 (2023061800260727000_c22) 2015; 62 (2023061800260727000_c6) 2000; 76 (2023061800260727000_c1) 1989; 10 (2023061800260727000_c2) 2014 (2023061800260727000_c13) 2016; 9 (2023061800260727000_c16) 1988 (2023061800260727000_c21) 2012; 111 (2023061800260727000_c8) 2012; 112 (2023061800260727000_c11) 2010; 96 (2023061800260727000_c15) 2014; 105 (2023061800260727000_c10) 2008; 92 (2023061800260727000_c14) 2016; 109 (2023061800260727000_c4) 2015; 5 |
| References_xml | – volume: 858 start-page: 599 year: 2016 ident: c9 publication-title: Mater. Sci. Forum – volume: 62 start-page: 309 year: 2015 ident: c22 publication-title: IEEE Trans. Electron Devices – volume: 108 start-page: 152108 year: 2016 ident: c5 publication-title: Appl. Phys. Lett. – volume: 90 start-page: 5058 year: 2001 ident: c7 publication-title: J. Appl. Phys. – volume: 105 start-page: 032106 year: 2014 ident: c15 publication-title: Appl. Phys. Lett. – volume: 60 start-page: 923 year: 2013 ident: c18 publication-title: IEEE Trans. Electron Devices – volume: 96 start-page: 203508 year: 2010 ident: c11 publication-title: Appl. Phys. Lett. – volume: 10 start-page: 455 year: 1989 ident: c1 publication-title: IEEE Electron Device Lett. – volume: 76 start-page: 1713 year: 2000 ident: c6 publication-title: Appl. Phys. Lett. – volume: 112 start-page: 024520 year: 2012 ident: c8 publication-title: J. Appl. Phys. – volume: 109 start-page: 182114 year: 2016 ident: c14 publication-title: Appl. Phys. Lett. – volume: 9 start-page: 051301 year: 2016 ident: c13 publication-title: Appl. Phys. Express – volume: 111 start-page: 014502 year: 2012 ident: c21 publication-title: J. Appl. Phys. – volume: 62 start-page: 324 year: 2015 ident: c12 publication-title: IEEE Trans. Electron Devices – volume: 5 start-page: 017109 year: 2015 ident: c4 publication-title: AIP Advances – volume: 76 start-page: 2250 year: 2000 ident: c3 publication-title: Appl. Phys. Lett. – volume: 162 start-page: 321 year: 1997 ident: c19 publication-title: Phys. Status Solidi A – volume: 92 start-page: 102112 year: 2008 ident: c10 publication-title: Appl. Phys. Lett. – volume: 9 start-page: 051301 year: 2016 ident: 2023061800260727000_c13 publication-title: Appl. Phys. Express doi: 10.7567/apex.9.051301 – volume: 76 start-page: 1713 year: 2000 ident: 2023061800260727000_c6 publication-title: Appl. Phys. Lett. doi: 10.1063/1.126167 – volume: 112 start-page: 024520 year: 2012 ident: 2023061800260727000_c8 publication-title: J. Appl. Phys. doi: 10.1063/1.4740068 – volume: 96 start-page: 203508 year: 2010 ident: 2023061800260727000_c11 publication-title: Appl. Phys. Lett. doi: 10.1063/1.3432404 – volume-title: The Si-SiO2 System year: 1988 ident: 2023061800260727000_c16 – volume: 10 start-page: 455 year: 1989 ident: 2023061800260727000_c1 publication-title: IEEE Electron Device Lett. doi: 10.1109/55.43098 – volume: 108 start-page: 152108 year: 2016 ident: 2023061800260727000_c5 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4946863 – volume: 858 start-page: 599 year: 2016 ident: 2023061800260727000_c9 publication-title: Mater. Sci. Forum doi: 10.4028/www.scientific.net/msf.858.599 – volume: 105 start-page: 032106 year: 2014 ident: 2023061800260727000_c15 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4891166 – volume: 90 start-page: 5058 year: 2001 ident: 2023061800260727000_c7 publication-title: J. Appl. Phys. doi: 10.1063/1.1412579 – volume: 76 start-page: 2250 year: 2000 ident: 2023061800260727000_c3 publication-title: Appl. Phys. Lett. doi: 10.1063/1.126311 – ident: 2023061800260727000_c20 – volume: 92 start-page: 102112 year: 2008 ident: 2023061800260727000_c10 publication-title: Appl. Phys. Lett. doi: 10.1063/1.2898502 – volume: 62 start-page: 309 year: 2015 ident: 2023061800260727000_c22 publication-title: IEEE Trans. Electron Devices doi: 10.1109/ted.2014.2352117 – volume: 109 start-page: 182114 year: 2016 ident: 2023061800260727000_c14 publication-title: Appl. Phys. Lett. doi: 10.1063/1.4967002 – volume: 5 start-page: 017109 year: 2015 ident: 2023061800260727000_c4 publication-title: AIP Advances doi: 10.1063/1.4905781 – volume-title: Fundamentals of Silicon Carbide Technology year: 2014 ident: 2023061800260727000_c2 – volume: 60 start-page: 923 year: 2013 ident: 2023061800260727000_c18 publication-title: IEEE Trans. Electron Devices doi: 10.1109/ted.2013.2237777 – volume: 162 start-page: 321 year: 1997 ident: 2023061800260727000_c19 publication-title: Phys. Status Solidi A doi: 10.1002/1521-396x(199707)162:1<321::aid-pssa321>3.0.co;2-f – volume: 111 start-page: 014502 year: 2012 ident: 2023061800260727000_c21 publication-title: J. Appl. Phys. doi: 10.1063/1.3673572 – volume-title: MOS Physics and Technology year: 1982 ident: 2023061800260727000_c17 – volume: 62 start-page: 324 year: 2015 ident: 2023061800260727000_c12 publication-title: IEEE Trans. Electron Devices doi: 10.1109/ted.2014.2358260 |
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| Snippet | We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (D
it) near the conduction band edge (E
C)... We found that post-oxidation Ar annealing at high temperature is effective in reducing the interface state density (Dit) near the conduction band edge (EC) of... |
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| SubjectTerms | Annealing Conduction bands Cooling rate Density High temperature Nitric oxide Oxidation Reduction |
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| Title | Reduction of interface state density in SiC (0001) MOS structures by post-oxidation Ar annealing at high temperature |
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