Physical and chemical mechanisms in oxide-based resistance random access memory

• Published in: Nanoscale research letters Vol. 10; no. 1; p. 120
• Main Authors: Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Zhang, Rui, Hung, Ya-Chi, Syu, Yong-En, Chang, Yao-Feng, Chen, Min-Chen, Chu, Tian-Jian, Chen, Hsin-Lu, Pan, Chih-Hung, Shih, Chih-Cheng, Zheng, Jin-Cheng, Sze, Simon M
• Format: Journal Article
• Language: English
• Published: Boston Springer US 12.03.2015; Springer Nature B.V
• Subjects: Carbon dioxide; Chemical reactions; Chemistry and Materials Science; Cryogenic temperature; Electric potential; Fabrication; Graphene; Materials Science; Memory devices; Molecular Medicine; Nano Review; Nanochemistry; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering; Oxidation; Oxygen ions; Portable equipment; Random access memory; Self alignment; Silicon; Silicon oxide; Silicon oxides; Voltage; Silicon oxide; Supercritical fluids; RRAM; Graphene oxide; Physical mechanism

In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an...