APA (7th ed.) Citation

Chang, K., Chang, T., Tsai, T., Zhang, R., Hung, Y., Syu, Y., . . . Sze, S. M. (2015). Physical and chemical mechanisms in oxide-based resistance random access memory. Nanoscale research letters, 10(1), 120. https://doi.org/10.1186/s11671-015-0740-7

Chicago Style (17th ed.) Citation

Chang, Kuan-Chang, et al. "Physical and Chemical Mechanisms in Oxide-based Resistance Random Access Memory." Nanoscale Research Letters 10, no. 1 (2015): 120. https://doi.org/10.1186/s11671-015-0740-7.

MLA (9th ed.) Citation

Chang, Kuan-Chang, et al. "Physical and Chemical Mechanisms in Oxide-based Resistance Random Access Memory." Nanoscale Research Letters, vol. 10, no. 1, 2015, p. 120, https://doi.org/10.1186/s11671-015-0740-7.