Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields
Magnetization switching by current-induced spin–orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the pr...
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| Published in | Nature nanotechnology Vol. 9; no. 7; pp. 548 - 554 |
|---|---|
| Main Authors | , , , , , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
London
Nature Publishing Group UK
01.07.2014
Nature Publishing Group |
| Subjects | |
| Online Access | Get full text |
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| Abstract | Magnetization switching by current-induced spin–orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin–orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co
20
Fe
60
B
20
/TaO
x
structures by spin–orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin–orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin–orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.
Spin–orbit torques in a geometrically asymmetric device made from a perpendicularly magnetized ferromagnet can switch its magnetization without the assistance of an applied magnetic field. |
|---|---|
| AbstractList | Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets.Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co(20)Fe(60)B(20)/TaO(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin-orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co sub(20)Fe sub(60)B sub(20)/TaO sub(x) structures by spin-orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin-orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin-orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. Magnetization switching by current-induced spin–orbit torques is of great interest due to its potential applications in ultralow-power memory and logic devices. The switching of ferromagnets with perpendicular magnetization is of particular technological relevance. However, in such materials, the presence of an in-plane external magnetic field is typically required to assist spin–orbit torque-driven switching and this is an obstacle for practical applications. Here, we report the switching of out-of-plane magnetized Ta/Co 20 Fe 60 B 20 /TaO x structures by spin–orbit torques driven by in-plane currents, without the need for any external magnetic fields. This is achieved by introducing a lateral structural asymmetry into our devices, which gives rise to a new field-like spin–orbit torque when in-plane current flows in these structures. The direction of the current-induced effective field corresponding to this field-like spin–orbit torque is out-of-plane, facilitating the switching of perpendicular magnets. Spin–orbit torques in a geometrically asymmetric device made from a perpendicularly magnetized ferromagnet can switch its magnetization without the assistance of an applied magnetic field. |
| Author | Tserkovnyak, Yaroslav Lang, Murong Tang, Jianshi Yu, Guoqiang Takei, So Amiri, Pedram Khalili Bender, Scott A. Wong, Kin L. Wang, Yong Alzate, Juan G. Chang, Li-Te Jiang, Ying Jiang, Wanjun Wang, Kang L. Fan, Yabin Upadhyaya, Pramey |
| Author_xml | – sequence: 1 givenname: Guoqiang surname: Yu fullname: Yu, Guoqiang email: guoqiangyu@ucla.edu organization: Department of Electrical Engineering, University of California – sequence: 2 givenname: Pramey surname: Upadhyaya fullname: Upadhyaya, Pramey organization: Department of Electrical Engineering, University of California – sequence: 3 givenname: Yabin surname: Fan fullname: Fan, Yabin organization: Department of Electrical Engineering, University of California – sequence: 4 givenname: Juan G. surname: Alzate fullname: Alzate, Juan G. organization: Department of Electrical Engineering, University of California – sequence: 5 givenname: Wanjun surname: Jiang fullname: Jiang, Wanjun organization: Department of Electrical Engineering, University of California – sequence: 6 givenname: Kin L. surname: Wong fullname: Wong, Kin L. organization: Department of Electrical Engineering, University of California – sequence: 7 givenname: So surname: Takei fullname: Takei, So organization: Department of Physics and Astronomy, University of California – sequence: 8 givenname: Scott A. surname: Bender fullname: Bender, Scott A. organization: Department of Physics and Astronomy, University of California – sequence: 9 givenname: Li-Te surname: Chang fullname: Chang, Li-Te organization: Department of Electrical Engineering, University of California – sequence: 10 givenname: Ying surname: Jiang fullname: Jiang, Ying organization: Department of Materials Science and Engineering, Center for Electron Microscopy and State Key Laboratory of Silicon Materials, Zhejiang University – sequence: 11 givenname: Murong surname: Lang fullname: Lang, Murong organization: Department of Electrical Engineering, University of California – sequence: 12 givenname: Jianshi orcidid: 0000-0001-8369-0067 surname: Tang fullname: Tang, Jianshi organization: Department of Electrical Engineering, University of California – sequence: 13 givenname: Yong surname: Wang fullname: Wang, Yong organization: Department of Materials Science and Engineering, Center for Electron Microscopy and State Key Laboratory of Silicon Materials, Zhejiang University – sequence: 14 givenname: Yaroslav surname: Tserkovnyak fullname: Tserkovnyak, Yaroslav organization: Department of Physics and Astronomy, University of California – sequence: 15 givenname: Pedram Khalili surname: Amiri fullname: Amiri, Pedram Khalili organization: Department of Electrical Engineering, University of California – sequence: 16 givenname: Kang L. surname: Wang fullname: Wang, Kang L. email: wang@seas.ucla.edu organization: Department of Electrical Engineering, University of California |
| BackLink | https://www.ncbi.nlm.nih.gov/pubmed/24813694$$D View this record in MEDLINE/PubMed |
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| Snippet | Magnetization switching by current-induced spin–orbit torques is of great interest due to its potential applications in ultralow-power memory and logic... Magnetization switching by current-induced spin-orbit torques is of great interest due to its potential applications in ultralow-power memory and logic... |
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| SubjectTerms | 140/146 142/126 147/143 639/766/119/1001 Asymmetry Electrons Ferromagnetism Magnetic fields Magnetization Materials Science Memory devices Nanotechnology Nanotechnology and Microengineering Oxidation Random access memory Switching Symmetry Torque |
| Title | Switching of perpendicular magnetization by spin–orbit torques in the absence of external magnetic fields |
| URI | https://link.springer.com/article/10.1038/nnano.2014.94 https://www.ncbi.nlm.nih.gov/pubmed/24813694 https://www.proquest.com/docview/1542386702 https://www.proquest.com/docview/1543281849 https://www.proquest.com/docview/1770341874 |
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