Low‐Thermal‐Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron‐Doped Reduced Graphene Oxide

Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@...

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Published inAdvanced science Vol. 7; no. 7; pp. 1903318 - n/a
Main Authors Cha, Jun‐Hwe, Kim, Dong‐Ha, Park, Cheolmin, Choi, Seon‐Jin, Jang, Ji‐Soo, Yang, Sang Yoon, Kim, Il‐Doo, Choi, Sung‐Yool
Format Journal Article
LanguageEnglish
Published Germany John Wiley & Sons, Inc 01.04.2020
John Wiley and Sons Inc
Wiley
Subjects
Annealing
Energy
flash irradiation
gas sensors
Glass substrates
Graphene
graphene oxide
Light
low‐thermal‐budget doping
Morphology
Nanomaterials
Nanowires
Sensors
graphene oxide
low‐thermal‐budget doping
flash irradiation
gas sensors
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Abstract Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 105 °C s−1). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 106‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties. Simultaneous heteroatom doping and reduction of graphene oxide (GO) in ambient air by a low‐thermal‐budget process is carried out through single‐shot irradiation using a Xe flash lamp. Compared to pristine reduced GO (rGO), B‐doped rGO features improve NO2 sensing performance (better response and reversibility), especially in a highly humid atmosphere.
AbstractList Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low-thermal-budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B-doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in-depth sequential doping and reduction mechanisms are investigated by ex situ X-ray photoelectron spectroscopy and direct millisecond-scale temperature measurements (temperature >1600 °C, < 10-millisecond duration, ramping rate of 5.3 × 10 °C s ). Single-flash IPL allows the large-scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 10 -fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room-temperature NO sensing. Thus, this work showcases the great potential of optical annealing for millisecond-scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties.
Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 105 °C s−1). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 106‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties.
Abstract Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 10 5 °C s −1 ). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 10 6 ‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO 2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties.
Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 10 5 °C s −1 ). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 10 6 ‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO 2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties. Simultaneous heteroatom doping and reduction of graphene oxide (GO) in ambient air by a low‐thermal‐budget process is carried out through single‐shot irradiation using a Xe flash lamp. Compared to pristine reduced GO (rGO), B‐doped rGO features improve NO 2 sensing performance (better response and reversibility), especially in a highly humid atmosphere.
Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 105 °C s−1). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 106‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties. Simultaneous heteroatom doping and reduction of graphene oxide (GO) in ambient air by a low‐thermal‐budget process is carried out through single‐shot irradiation using a Xe flash lamp. Compared to pristine reduced GO (rGO), B‐doped rGO features improve NO2 sensing performance (better response and reversibility), especially in a highly humid atmosphere.
Abstract Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low‐thermal‐budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B‐doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in‐depth sequential doping and reduction mechanisms are investigated by ex situ X‐ray photoelectron spectroscopy and direct millisecond‐scale temperature measurements (temperature >1600 °C, < 10‐millisecond duration, ramping rate of 5.3 × 105 °C s−1). Single‐flash IPL allows the large‐scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 106‐fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room‐temperature NO2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond‐scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties.
Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of simultaneous low-thermal-budget heteroatom doping of GO and its reduction in ambient air is addressed through the synthesis of B-doped reduced GO (B@rGO) by flash irradiation of boric acid loaded onto a GO support with intense pulsed light (IPL). The effects of light power and number of shots on the in-depth sequential doping and reduction mechanisms are investigated by ex situ X-ray photoelectron spectroscopy and direct millisecond-scale temperature measurements (temperature >1600 °C, < 10-millisecond duration, ramping rate of 5.3 × 105 °C s-1). Single-flash IPL allows the large-scale synthesis of substantially doped B@rGO (≈3.60 at% B) to be realized with a thermal budget 106-fold lower than that of conventional thermal methods, and the prepared material with abundant B active sites is employed for highly sensitive and selective room-temperature NO2 sensing. Thus, this work showcases the great potential of optical annealing for millisecond-scale ultrafast reduction and heteroatom doping of GO in ambient air, which allows the tuning of multiple physicochemical GO properties.
Author Cha, Jun‐Hwe
Park, Cheolmin
Jang, Ji‐Soo
Choi, Sung‐Yool
Choi, Seon‐Jin
Kim, Il‐Doo
Yang, Sang Yoon
Kim, Dong‐Ha
AuthorAffiliation 3 Division of Materials Science and Engineering Hanyang University Wangsimni‐ro, Seongdong‐gu Seoul 04763 Republic of Korea
2 Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
1 School of Electrical Engineering Graphene/2D Materials Research Center Center for Advanced Materials Discovery towards 3D Displays Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
AuthorAffiliation_xml – name: 2 Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
– name: 1 School of Electrical Engineering Graphene/2D Materials Research Center Center for Advanced Materials Discovery towards 3D Displays Korea Advanced Institute of Science and Technology (KAIST) 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea
– name: 3 Division of Materials Science and Engineering Hanyang University Wangsimni‐ro, Seongdong‐gu Seoul 04763 Republic of Korea
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BackLink https://www.ncbi.nlm.nih.gov/pubmed/32274315$$D View this record in MEDLINE/PubMed
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Issue 7
Keywords graphene oxide
low‐thermal‐budget doping
flash irradiation
gas sensors
Language English
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Snippet Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of...
Abstract Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of...
Abstract Graphene oxide (GO) doping and reduction allow for physicochemical property modification to suit practical application needs. Herein, the challenge of...
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StartPage 1903318
SubjectTerms Annealing
Energy
flash irradiation
gas sensors
Glass substrates
Graphene
graphene oxide
Light
low‐thermal‐budget doping
Morphology
Nanomaterials
Nanowires
Sensors
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Title Low‐Thermal‐Budget Doping of 2D Materials in Ambient Air Exemplified by Synthesis of Boron‐Doped Reduced Graphene Oxide
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