Room-temperature InP distributed feedback laser array directly grown on silicon

• Published in: Nature photonics Vol. 9; no. 12; pp. 837 - 842
• Main Authors: Wang, Zhechao, Tian, Bin, Pantouvaki, Marianna, Guo, Weiming, Absil, Philippe, Van Campenhout, Joris, Merckling, Clement, Van Thourhout, Dries
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.12.2015; Nature Publishing Group
• Subjects: 140/125; 142/126; 147/135; 147/143; 147/28; 639/301/1019/1020/1093; 639/624/1020/1093; 639/624/1075/401; 639/624/399/1099; Applied and Technical Physics; Crystal lattices; Devices; Distributed feedback lasers; Fabrication; Laser arrays; Photonics; Physics; Quantum Physics; Semiconductors; Silicon; Thermal expansion
• ISSN: 1749-4885; 1749-4893
• DOI: 10.1038/nphoton.2015.199

Fully exploiting the silicon photonics platform for large-volume, cost-sensitive applications requires a fundamentally new approach to directly integrate high-performance laser sources using wafer-scale fabrication methods. Direct-bandgap III–V semiconductors allow efficient light generation, but the large mismatch in lattice constant, thermal expansion and crystal polarity makes their epitaxial growth directly on silicon extremely complex. Using a selective-area growth technique in confined regions, we surpass this fundamental limit and demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temperature and suitable for wavelength-division-multiplexing applications. The novel epitaxial technology suppresses threading dislocations and anti-phase boundaries to a less than 20-nm-thick layer, which does not affect device performance. Using an in-plane laser cavity defined using standard top-down lithographic patterning together with a high yield and high uniformity provides scalability and a straightforward path towards cost-effective co-integration with silicon photonic and electronic circuits. Scientists demonstrate an optically pumped InP-based distributed feedback laser array monolithically grown on (001)-silicon operating at room temperature that is suitable for wavelength-division multiplexing applications.