GaN Schottky diode on sapphire substrate for THz frequency multiplier applications

• Published in: Micro and nanostructures (2022) Vol. 164; p. 107116
• Main Authors: Di Gioia, Giuseppe, Samnouni, Mohammed, Chinni, Vinay, Mondal, Priyanka, Treuttel, Jeanne, Zegaoui, Malek, Ducournau, Guillaume, Zaknoune, Mohammed, Roelens, Yannick
• Format: Journal Article
• Language: English
• Published: Elsevier 01.04.2022
• Subjects: Physics; Frequency multiplier; GaN; THz; Schottky diode

Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the h...