GaN Schottky diode on sapphire substrate for THz frequency multiplier applications
Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the h...
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| Published in | Micro and nanostructures (2022) Vol. 164; p. 107116 |
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| Main Authors | , , , , , , , , |
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01.04.2022
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| Abstract | Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the huge interest in the field of HEMT for high frequency and power application, GaN Schottky diodes is of a high interest for the next technological step for frequency multipliers for THz generations, replacing GaAs Schottky diodes. Due to a lack of research focused on GaN Schottky diodes for frequency multiplication, the design and fabrication of GaN frequency multipliers remains a technological challenge. In this paper, we present GaN Schottky diodes fabricated on a heteroepitaxial GaN on sapphire. The barrier height obtained is around 0.53 eV, and it increases up to 0.73 eV after Schottky contact annealing; and the ideality factor is equal to 1.1 before annealing and 1.2 after annealing. The resulting series resistance is very low, 7Ω and 1Ω, before and after annealing, respectively. © 2021 Elsevier Ltd |
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| AbstractList | Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as candidate for Schottky varactor diodes for next-generation high-power frequency multipliers. Similarly to the huge interest in the field of HEMT for high frequency and power application, GaN Schottky diodes is of a high interest for the next technological step for frequency multipliers for THz generations, replacing GaAs Schottky diodes. Due to a lack of research focused on GaN Schottky diodes for frequency multiplication, the design and fabrication of GaN frequency multipliers remains a technological challenge. In this paper, we present GaN Schottky diodes fabricated on a heteroepitaxial GaN on sapphire. The barrier height obtained is around 0.53 eV, and it increases up to 0.73 eV after Schottky contact annealing; and the ideality factor is equal to 1.1 before annealing and 1.2 after annealing. The resulting series resistance is very low, 7Ω and 1Ω, before and after annealing, respectively. © 2021 Elsevier Ltd |
| ArticleNumber | 107116 |
| Author | Zegaoui, Malek Ducournau, Guillaume Mondal, Priyanka Treuttel, Jeanne Chinni, Vinay Di Gioia, Giuseppe Samnouni, Mohammed Roelens, Yannick Zaknoune, Mohammed |
| Author_xml | – sequence: 1 givenname: Giuseppe orcidid: 0000-0002-6191-0855 surname: Di Gioia fullname: Di Gioia, Giuseppe – sequence: 2 givenname: Mohammed surname: Samnouni fullname: Samnouni, Mohammed – sequence: 3 givenname: Vinay surname: Chinni fullname: Chinni, Vinay – sequence: 4 givenname: Priyanka surname: Mondal fullname: Mondal, Priyanka – sequence: 5 givenname: Jeanne surname: Treuttel fullname: Treuttel, Jeanne – sequence: 6 givenname: Malek surname: Zegaoui fullname: Zegaoui, Malek – sequence: 7 givenname: Guillaume surname: Ducournau fullname: Ducournau, Guillaume – sequence: 8 givenname: Mohammed surname: Zaknoune fullname: Zaknoune, Mohammed – sequence: 9 givenname: Yannick surname: Roelens fullname: Roelens, Yannick |
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| Keywords | Frequency multiplier GaN THz Schottky diode |
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