Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts

• Published in: Nature communications Vol. 14; no. 1; pp. 5662 - 9
• Main Authors: Yu, Jun, Wang, Han, Zhuge, Fuwei, Chen, Zirui, Hu, Man, Xu, Xiang, He, Yuhui, Ma, Ying, Miao, Xiangshui, Zhai, Tianyou
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 13.09.2023; Nature Publishing Group; Nature Portfolio
• Subjects: 140/133; 142/126; 147/137; 147/143; 147/3; 639/301/1005; 639/925/927/1007; Carrier injection; Data storage; Density; Efficiency; Electric fields; Fatigue limit; Flash memory (computers); Graphene; Heterostructures; Humanities and Social Sciences; Lithium; Memory cells; Memory devices; Molybdenum disulfide; multidisciplinary; Performance enhancement; Phase transitions; Retention; Robustness; Science; Science (multidisciplinary); Transmission electron microscopy

As the prevailing non-volatile memory (NVM), flash memory offers mass data storage at high integration density and low cost. However, due to the ‘speed-retention-endurance’ dilemma, their typical speed is limited to ~microseconds to milliseconds for program and erase operations, restricting their ap...