Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...
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Published in | Scientific reports Vol. 11; no. 1; p. 676 |
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Main Authors | , , , , , , , , , |
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Language | English |
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12.01.2021
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Abstract | Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs
0.92
Sb
0.08
/Al
0.3
Ga
0.7
As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. |
---|---|
AbstractList | Abstract
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs
0.92
Sb
0.08
/Al
0.3
Ga
0.7
As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells. |
ArticleNumber | 676 |
Author | Tang, Jilong Lin, Fengyuan Wang, Xiaohua Gao, Xian Fang, Xuan Wang, Xinwei Wei, Zhipeng Fang, Dan Chen, Rui Wang, Dengkui |
Author_xml | – sequence: 1 givenname: Dengkui surname: Wang fullname: Wang, Dengkui organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 2 givenname: Xian surname: Gao fullname: Gao, Xian organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Department of Electrical and Electronic Engineering, Southern University of Science and Technology – sequence: 3 givenname: Jilong surname: Tang fullname: Tang, Jilong email: jl_tangcust@163.com organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 4 givenname: Xuan surname: Fang fullname: Fang, Xuan organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 5 givenname: Dan surname: Fang fullname: Fang, Dan organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 6 givenname: Xinwei surname: Wang fullname: Wang, Xinwei organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 7 givenname: Fengyuan surname: Lin fullname: Lin, Fengyuan organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 8 givenname: Xiaohua surname: Wang fullname: Wang, Xiaohua organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology – sequence: 9 givenname: Rui surname: Chen fullname: Chen, Rui organization: Department of Electrical and Electronic Engineering, Southern University of Science and Technology – sequence: 10 givenname: Zhipeng surname: Wei fullname: Wei, Zhipeng email: zpweicust@126.com organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology |
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Cites_doi | 10.1063/1.1513200 10.1063/1.3062979 10.1103/PhysRevB.81.233301 10.1063/1.1365061 10.1016/j.tsf.2006.07.118 10.1007/BF00624986 10.1021/acsami.5b01100 10.1007/s11082-015-0192-4 10.1039/C5NR07938A 10.1063/1.3380853 10.1016/j.physe.2014.09.017 10.1063/1.447218 10.1063/1.104723 10.1007/s11664-003-0249-1 10.1016/j.ssc.2020.113837 10.1063/1.4764880 10.1016/j.ssc.2004.09.036 10.1016/j.jlumin.2018.01.050 10.1016/S0022-0248(03)01079-0 10.1063/1.1368156 10.1016/j.microrel.2014.09.012 10.1038/srep29112 10.1016/S0022-0248(00)00018-X 10.1016/j.jcrysgro.2013.11.035 10.1016/j.mseb.2007.09.075 10.1021/acsami.5b10176 10.1063/1.4943193 10.1063/1.1319328 |
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Snippet | Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission... Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission... Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission... |
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Title | Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing |
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