Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing

Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted...

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Published inScientific reports Vol. 11; no. 1; p. 676
Main Authors Wang, Dengkui, Gao, Xian, Tang, Jilong, Fang, Xuan, Fang, Dan, Wang, Xinwei, Lin, Fengyuan, Wang, Xiaohua, Chen, Rui, Wei, Zhipeng
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 12.01.2021
Nature Publishing Group
Nature Portfolio
Subjects
639/301/1019
639/766/119
Annealing
Emissions
Humanities and Social Sciences
multidisciplinary
Optical properties
Photons
Radioactivity
Science
Science (multidisciplinary)
Wells
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Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
AbstractList Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs0.92Sb0.08/Al0.3Ga0.7As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission characteristics of GaAs 0.92 Sb 0.08 /Al 0.3 Ga 0.7 As multiple quantum wells, which investigated by temperature-dependent photoluminescence, are adjusted through strain and interfacial diffusion via rapid thermal annealing. The light-hole (LH) exciton emission and the heavy-hole (HH) exciton emission are observed at room temperature. After annealing, the LH and HH emission peaks have blue shift. It can be ascribed to the variation of interfacial strain at low annealing temperature and the interfacial diffusion between barrier layer and well layer at high annealing temperature. This work is of great significance for emission adjustment of strained multiple quantum wells.
ArticleNumber 676
Author Tang, Jilong
Lin, Fengyuan
Wang, Xiaohua
Gao, Xian
Fang, Xuan
Wang, Xinwei
Wei, Zhipeng
Fang, Dan
Chen, Rui
Wang, Dengkui
Author_xml – sequence: 1
  givenname: Dengkui
  surname: Wang
  fullname: Wang, Dengkui
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 2
  givenname: Xian
  surname: Gao
  fullname: Gao, Xian
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Department of Electrical and Electronic Engineering, Southern University of Science and Technology
– sequence: 3
  givenname: Jilong
  surname: Tang
  fullname: Tang, Jilong
  email: jl_tangcust@163.com
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 4
  givenname: Xuan
  surname: Fang
  fullname: Fang, Xuan
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 5
  givenname: Dan
  surname: Fang
  fullname: Fang, Dan
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 6
  givenname: Xinwei
  surname: Wang
  fullname: Wang, Xinwei
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 7
  givenname: Fengyuan
  surname: Lin
  fullname: Lin, Fengyuan
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 8
  givenname: Xiaohua
  surname: Wang
  fullname: Wang, Xiaohua
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
– sequence: 9
  givenname: Rui
  surname: Chen
  fullname: Chen, Rui
  organization: Department of Electrical and Electronic Engineering, Southern University of Science and Technology
– sequence: 10
  givenname: Zhipeng
  surname: Wei
  fullname: Wei, Zhipeng
  email: zpweicust@126.com
  organization: State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology
BookMark eNp9kktv1DAURiNURB_0D7CyxIZNpn7G9gZpVJWhUiUWwNq6cZwZjxJ7aietZs0fx52pCmVBNo58zz2yr7_z6iTE4KrqA8ELgpm6ypwIrWpMca2w1E29f1OdUcxFTRmlJ3_9n1aXOW9x-QTVnOh31SljnDVairPq183oc_YxILuBBHZyyefJ24weIHmYniqxRytYZrzQ9HuLF1hdLQe8YCvAC7nMKE8JfHAdGudh8rvBofsZwjSP6NENQ0YW5lyq7R4l2PkOTRuXRhgQhOBg8GH9vnrbw5Dd5fN6Uf38cvPj-mt99211e728q60gcqp7xbBquKCgemetJM7KHhxXGFstmk5ipSR0UhHaM2qhbygjWlEprFIFYhfV7dHbRdiaXfIjpL2J4M1hI6a1gVTuPjjDNdGc9ZbK1vJWNy0IK6UWgHXXc0WL6_PRtZvb0XXWhTKF4ZX0dSX4jVnHByMV5orrIvj0LEjxfnZ5MuUhbBkYBBfnbCiXUhDBG1HQj_-g2zinUEZ1oLBm9EDRI2VTzDm5_uUwBJunyJhjZEyJjDlExuxLEzs25QKHtUt_1P_p-g0vLsP5
CitedBy_id crossref_primary_10_1063_5_0186031
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DBID C6C
AAYXX
CITATION
3V.
7X7
7XB
88A
88E
88I
8FE
8FH
8FI
8FJ
8FK
ABUWG
AFKRA
AZQEC
BBNVY
BENPR
BHPHI
CCPQU
DWQXO
FYUFA
GHDGH
GNUQQ
HCIFZ
K9.
LK8
M0S
M1P
M2P
M7P
PIMPY
PQEST
PQQKQ
PQUKI
PRINS
Q9U
7X8
5PM
DOA
DOI 10.1038/s41598-020-80796-y
DatabaseName Springer Open Access
CrossRef
ProQuest Central (Corporate)
ProQuest_Health & Medical Collection
ProQuest Central (purchase pre-March 2016)
Biology Database (Alumni Edition)
Medical Database (Alumni Edition)
Science Database (Alumni Edition)
ProQuest SciTech Collection
ProQuest Natural Science Collection
Hospital Premium Collection
Hospital Premium Collection (Alumni Edition)
ProQuest Central (Alumni) (purchase pre-March 2016)
ProQuest Central (Alumni)
ProQuest Central
ProQuest Central Essentials
Biological Science Collection
AUTh Library subscriptions: ProQuest Central
ProQuest Natural Science Collection
ProQuest One Community College
ProQuest Central
Health Research Premium Collection
Health Research Premium Collection (Alumni)
ProQuest Central Student
SciTech Premium Collection (Proquest) (PQ_SDU_P3)
ProQuest Health & Medical Complete (Alumni)
Biological Sciences
Health & Medical Collection (Alumni Edition)
PML(ProQuest Medical Library)
ProQuest Science Journals
Biological Science Database
Publicly Available Content Database
ProQuest One Academic Eastern Edition (DO NOT USE)
ProQuest One Academic
ProQuest One Academic UKI Edition
ProQuest Central China
ProQuest Central Basic
MEDLINE - Academic
PubMed Central (Full Participant titles)
DOAJ Directory of Open Access Journals
DatabaseTitle CrossRef
Publicly Available Content Database
ProQuest Central Student
ProQuest Central Essentials
ProQuest Health & Medical Complete (Alumni)
ProQuest Central (Alumni Edition)
SciTech Premium Collection
ProQuest One Community College
ProQuest Natural Science Collection
ProQuest Central China
ProQuest Biology Journals (Alumni Edition)
ProQuest Central
Health Research Premium Collection
Health and Medicine Complete (Alumni Edition)
Natural Science Collection
ProQuest Central Korea
Biological Science Collection
ProQuest Medical Library (Alumni)
ProQuest Science Journals (Alumni Edition)
ProQuest Biological Science Collection
ProQuest Central Basic
ProQuest Science Journals
ProQuest One Academic Eastern Edition
ProQuest Hospital Collection
Health Research Premium Collection (Alumni)
Biological Science Database
ProQuest SciTech Collection
ProQuest Hospital Collection (Alumni)
ProQuest Health & Medical Complete
ProQuest Medical Library
ProQuest One Academic UKI Edition
ProQuest One Academic
ProQuest Central (Alumni)
MEDLINE - Academic
DatabaseTitleList CrossRef

Publicly Available Content Database
Database_xml – sequence: 1
  dbid: C6C
  name: Springer Open Access
  url: http://www.springeropen.com/
  sourceTypes: Publisher
– sequence: 2
  dbid: DOA
  name: DOAJ Directory of Open Access Journals
  url: https://www.doaj.org/
  sourceTypes: Open Website
– sequence: 3
  dbid: BENPR
  name: AUTh Library subscriptions: ProQuest Central
  url: https://www.proquest.com/central
  sourceTypes: Aggregation Database
DeliveryMethod fulltext_linktorsrc
Discipline Biology
EISSN 2045-2322
EndPage 676
ExternalDocumentID oai_doaj_org_article_491943fc27bc4b96ba5c7795a09df482
10_1038_s41598_020_80796_y
GrantInformation_xml – fundername: Shenzhen Fundamental Research Program
  grantid: JCYJ20180307151538972
  funderid: http://dx.doi.org/10.13039/501100017607
– fundername: Developing Project of Science and Technology of Jilin Province
  grantid: 20160520027JH; 20170520117JH
– fundername: National Natural Science Foundation of China
  grantid: 61574022; 61674021; 11674038; 61704011; 61904017
– fundername: China Postdoctoral Science Foundation
  grantid: 2019M652176
– fundername: Youth Foundation of Changchun University of Science and Technology
  grantid: XQNJJ-2018-18
– fundername: ;
  grantid: XQNJJ-2018-18
– fundername: ;
  grantid: 20160520027JH; 20170520117JH
– fundername: ;
  grantid: 2019M652176
– fundername: ;
  grantid: JCYJ20180307151538972
– fundername: ;
  grantid: 61574022; 61674021; 11674038; 61704011; 61904017
GroupedDBID 0R~
3V.
4.4
53G
5VS
7X7
88A
88E
88I
8FE
8FH
8FI
8FJ
AAFWJ
AAJSJ
AAKDD
ABDBF
ABUWG
ACGFS
ACSMW
ADBBV
ADRAZ
AENEX
AFKRA
AJTQC
ALIPV
ALMA_UNASSIGNED_HOLDINGS
AOIJS
AZQEC
BAWUL
BBNVY
BCNDV
BENPR
BHPHI
BPHCQ
BVXVI
C6C
CCPQU
DIK
DWQXO
EBD
EBLON
EBS
ESX
FYUFA
GNUQQ
GROUPED_DOAJ
GX1
HCIFZ
HH5
HMCUK
HYE
KQ8
LK8
M0L
M1P
M2P
M48
M7P
M~E
NAO
OK1
PIMPY
PQQKQ
PROAC
PSQYO
RIG
RNT
RNTTT
RPM
SNYQT
UKHRP
AAYXX
AFPKN
CITATION
7XB
8FK
K9.
PQEST
PQUKI
PRINS
Q9U
7X8
AFGXO
5PM
ID FETCH-LOGICAL-c517t-f83086452a8fecc71ec7fae4800c956d70887ad7812f32caf623198275c888003
IEDL.DBID RPM
ISSN 2045-2322
IngestDate Tue Oct 22 15:14:21 EDT 2024
Tue Sep 17 21:34:27 EDT 2024
Fri Aug 16 09:48:15 EDT 2024
Thu Oct 10 22:48:55 EDT 2024
Fri Aug 23 01:03:18 EDT 2024
Fri Oct 11 20:36:28 EDT 2024
IsDoiOpenAccess true
IsOpenAccess true
IsPeerReviewed true
IsScholarly true
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LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c517t-f83086452a8fecc71ec7fae4800c956d70887ad7812f32caf623198275c888003
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
OpenAccessLink https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7804849/
PMID 33436975
PQID 2477093265
PQPubID 2041939
PageCount 1
ParticipantIDs doaj_primary_oai_doaj_org_article_491943fc27bc4b96ba5c7795a09df482
pubmedcentral_primary_oai_pubmedcentral_nih_gov_7804849
proquest_miscellaneous_2477515465
proquest_journals_2477093265
crossref_primary_10_1038_s41598_020_80796_y
springer_journals_10_1038_s41598_020_80796_y
PublicationCentury 2000
PublicationDate 2021-01-12
PublicationDateYYYYMMDD 2021-01-12
PublicationDate_xml – month: 01
  year: 2021
  text: 2021-01-12
  day: 12
PublicationDecade 2020
PublicationPlace London
PublicationPlace_xml – name: London
PublicationTitle Scientific reports
PublicationTitleAbbrev Sci Rep
PublicationYear 2021
Publisher Nature Publishing Group UK
Nature Publishing Group
Nature Portfolio
Publisher_xml – name: Nature Publishing Group UK
– name: Nature Publishing Group
– name: Nature Portfolio
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SSID ssj0000529419
Score 2.376325
Snippet Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission...
Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission...
Abstract Rapid thermal annealing is an effective way to improve the optical properties of semiconductor materials and devices. In this paper, the emission...
SourceID doaj
pubmedcentral
proquest
crossref
springer
SourceType Open Website
Open Access Repository
Aggregation Database
Publisher
StartPage 676
SubjectTerms 639/301/1019
639/766/119
Annealing
Emissions
Humanities and Social Sciences
multidisciplinary
Optical properties
Photons
Radioactivity
Science
Science (multidisciplinary)
Wells
SummonAdditionalLinks – databaseName: DOAJ Directory of Open Access Journals
  dbid: DOA
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwrV3NbxUhECemiYkXY_2Iq9Vg4k15D1hY4Pg0_YiJXrRJb4RlITax-2r3bZN39h93gH2128R48bqwfMwMM7-BYUDobfCMeoAShEdXE8FUJAZ0JfFtLb3irmnyrbTPX5qTU_HpTJ7deuorxYSV9MCFcEthwM2uo-eq9aI1TeugDWWko6aLQhfty-QtZ6pk9ebQpZluydBaLwewVOk2GXhLmirTkO3MEuWE_TOUeTdG8s5BabY_R4_Qwwk44lUZ8D66F_rH6H55SnL7BP06BIalnS_s5ymY8TV4w5n8eB3xsVsNdGH415YuqF6ufoA7fezoQq0GPOTnIkKHd0GG-OcIdB8vcNrgG7B34wCl7RZfucvzDifoeAFDcqCqXbrV_hSdHh1--3hCpgcWiJdMbUjUNXg0QnKnI7BSseBVdEEAiPTgN3UqqSDXKQABsebeRcBKzGiupAfHGfTBM7TXr_vwHGFvghSc1WByoUH4JcpWSyOcqk1oTFOhdzti28uSR8Pm8-9a28IaC6yxmTV2W6EPiR83NVMO7PwBJMNOkmH_JRkVOthx004Lc7BcKEUTZpUVenNTDBxK5ySuD-ux1AGYJ1IdNZOC2YDmJf3595ycOyV00sJU6P1OXv50_vcJv_gfE36JHvAUcUMZYfwA7W2uxvAKINOmfZ1Xx294uhHq
  priority: 102
  providerName: Directory of Open Access Journals
– databaseName: AUTh Library subscriptions: ProQuest Central
  dbid: BENPR
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1Nb9QwELWgFRIXxKcIFGQkbuBd23Hi-IS2aNsKiQoBlXqzHMeGSjTZbjaV9tw_zthJtkoluMZO4vhNxm9m7BmE3jvLqAUqQbg3KRFMeqJAVxJbppmV3OR5PJX29TQ_ORNfzrPzweHWDtsqR50YFXXV2OAjn3MhJQ1kI_u0uiKhalSIrg4lNO6jfc5ECNPuHy5Pv33feVlCHEswNZyWoWkxb2HFCqfKwGoqqFQ52U5WpJi4f8I27-6VvBMwjevQ0WP0aCCQeNEj_gTdc_VT9KAvKbl9hm6WAFzwgGE7TcWMr8EqjjDgxuNjs2jpTPEfJZ3RYr74A2b1saEzuWhxG8tGuAqPmw3xVQfz313i4OhrsTVdC63lFq_N6qLCgUJewpAMqGwTTrc_R2dHy5-fT8hQaIHYjMkN8UUKlo3IuCk8QCqZs9IbJ4BMWrCfKhlUkakkkAGfcms8cCamCi4zCwY06IUXaK9uavcSYatcJjhLYemFB8ItPiuLTAkjU-VylSfowzjZetXn09AxDp4WuodGAzQ6QqO3CToMeOx6hlzY8UKz_qWHX0sLxZRIveWytKJUeWlAyqTKDFWVFwVP0MGIph5-0FbfilOC3u2aAaEQLzG1a7q-D9A9EfrIiRRMBjRtqS9-xyTdIbFTIVSCPo7ycvvyf3_wq_-P9TV6yMOeGsoI4wdob7Pu3BsgRZvy7SD5fwFDaAr4
  priority: 102
  providerName: ProQuest
– databaseName: Scholars Portal Open Access Journals
  dbid: M48
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwELZKERIXRHmI0FIZiRtkm_gR2weEFtSHkMoFVurNchybVmqz7WZTNef-ccZOUpSqHLjG48TxN7a_sT0zCH1wNs8sUImUeENTlgufKpgrU1tSbgUxRRG90o5_FEcL9v2En2ygMd3R0IHNg6ZdyCe1WJ3Pbq66LzDgP_cu43KvgUUoOIqBISQzoYq0e4QeE0ZZ0Pjjge73sb4JNEQNvjMPV52sTzGM_4R73r85ee_4NK5KB8_Rs4FO4nmP_xbacPUL9KRPMNm9RLf7AGPYD8N2GpgZX4ONHEHBS48PzbzJZor8LLNZJvfm52BkH5psJuYNbmISCVfh8eohvmoBjfYCh22_BlvTNlBadnhlLs8qHAjlBTTJwARugq_7K7Q42P_17Sgd0i6kludinXpJwc5hnBjpAWCROyu8cQyopQVrqhJhYjKVAGrgKbHGA4PKlSSCWzCnYZZ4jTbrZe3eIGyV44zkFBZieCFU8byUXDEjqHKFKhL0cexsfdlH19DxVJxK3UOjARododFdgr4GPO4kQ2Ts-GC5-q2HgaaZyhWj3hJRWlaqojSgc0Jxk6nKM0kStDOiqUdt04QJkQUmyxP0_q4YEAqnJ6Z2y7aXAfLHgoyYaMGkQdOS-uw0huwOYZ4kUwn6NOrL34__-4ff_p_4NnpKwo2bLE9zsoM216vWvQPKtC534zj4AzmWEaA
  priority: 102
  providerName: Scholars Portal
– databaseName: Springer Open Access
  dbid: C6C
  link: http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV1Lb9QwELagCIkLanmI0IKMxA2y9TO2j9tVH0KCC1TqzXIcW1Si2bbZIO2ZP96xk12Uih64xnbi-Bt7vvF4xgh9DJ4SD1SiZNHxUlAVSwNrZelrLr1irqpyVNrXb9XZufhyIS_GNDkpFmbiv-f6sAMFk4LAwMjRRJmqXD9GTyStSJLgRbXY7qckj5WgZoyL-XfTie7JKfonvPL-qch7rtGscU520fORKuL5gO0eehTaF-jpcHnk-iX6cwwQpb0u7KdJl_FvsH_zgONlxKdu3pGZYd9rMiP6cP4LDOhTR2Zq3uEuXxARGrw5Vohvehjp_gqnLb0Oe9d3UFqv8a27vmxwIotX0CUHi7NLceyv0PnJ8Y_FWTleqVB6SdWqjJqDDSMkczoCeIoGr6ILAmijB0upUWnRcY0CtR858y4CO6JGMyU9mMqwArxGO-2yDW8Q9iZIwSgHJQsvhCZR1loa4RQ3oTJVgT5tBtteD5kzbPZ4c20HaCxAYzM0dl2go4THtmbKep0fgDDYcRJZYagRPHqmai9qU9UO5EkZ6YhpotCsQAcbNO04FTvLhFIksVRZoA_bYkAoeUZcG5b9UAeInUh11EQKJh2alrSXP3M67pTCSQtToM8befn78Yd_-O3_Vd9Hz1g6TUNoSdkB2lnd9uEd0KFV_T7Pgzst7wMV
  priority: 102
  providerName: Springer Nature
Title Emission characteristics variation of GaAs0.92Sb0.08/Al0.3Ga0.7As strained multiple quantum wells caused by rapid thermal annealing
URI https://link.springer.com/article/10.1038/s41598-020-80796-y
https://www.proquest.com/docview/2477093265
https://search.proquest.com/docview/2477515465
https://pubmed.ncbi.nlm.nih.gov/PMC7804849
https://doaj.org/article/491943fc27bc4b96ba5c7795a09df482
Volume 11
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3Nb9MwFLe2IdAuiE8RGJWRuEHSxB-xfeyqbhNSpwmY1FvkOPGotKalaZB65h_n2UnGMokLl0iJndjx79n-Pfu9Z4Q-liaJDVCJkFhNQ5YIGyoYK0OTU24E0WnqvdLml-nFNfuy4IsDxHtfGG-0b_JlVN2uomr5w9tWblZm3NuJja_mUxc0RzI1PkSHgtJ7Knob0JtAaapzkImpHNcwSTlHMlCUZCxUGu6P0RNKGU2VMy-8Nx_5sP0DrvnQUvLBdqmfhc6eoacdfcSTtprP0UFZvUCP2wMl9y_R7xnA5ta_sBkGYsa_QCf2IOC1xed6UseRIt_yOIrleHILSvW5jiMxqXHtD40oC9ybGuKfDbR-s8Juma_GRjc1pOZ7vNWbZYEdgVxBlTQM2Nr5tr9C12ez79OLsDtmITQ8EbvQSgp6DeNESwuAiqQ0wuqSAZU0oD0Vwg1EuhBABSwlRltgTImSRHAD6jOMCq_RUbWuyjcIG1VyRhIKEy98EF6xPJdcMS2oKlOVBuhT39jZpo2mkfldcCqzFqUMUMo8Stk-QKcOj7ucLhK2f7De3mSdPGRMJYpRa4jIDctVmmuQMaG4jlVhmSQBOunRzLruWWeECRE75soD9OEuGRByuyW6KtdNmwfIHnN5xEAKBhUapoDE-hDdnYQG6HMvL38L__cPv_3vgt6hY-KMbeIkTMgJOtptm_I9sKVdPoI-shAj9Oh0dnn1Fe6m6XTkVx7gOmdy5HvPH3ijF8w
link.rule.ids 230,315,733,786,790,870,891,2115,12083,21416,24346,27955,27956,31752,31753,33777,33778,41153,42222,43343,43838,51609,53825,53827,74100,74657
linkProvider National Library of Medicine
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV1Lb9QwELagCMEF8RSBAkbiBt6NH4njE1pQ2wXaXmilvVmOY0Mlmmw3G6Q988cZO9mtUgmusZM4-cbjb2bsGYTeOUtTC1SCMG84EVR6okBXElvyzEpm8jyeSjs5zefn4usiWwwOt3bYVrnViVFRV40NPvIpE1KmgWxkH5dXJFSNCtHVoYTGbXRHcC6CnMuF3PlYQhRLUDWclUl5MW1hvQpnysBmKlKpcrIZrUcxbf-Ia97cKXkjXBpXocOH6MFAH_Gsx_sRuuXqx-huX1By8wT9OQDYgv8L23EiZvwbbOIIAm48PjKzNp0o9r1MJ2kxnf0Co_rIpBM5a3Ebi0a4Cm-3GuKrDv5-d4mDm6_F1nQttJYbvDLLiwoHAnkJQzKgsE042_4UnR8enH2ek6HMArEZlWviCw52jciYKTwAKqmz0hsngEpasJ4qGRSRqSRQAc-ZNR4YE1UFk5kF8xm0wjO0Vze1e46wVS4TjHJYeOGBcIvPyiJTwkiuXK7yBL3f_my97LNp6BgF54XuodEAjY7Q6E2CPgU8dj1DJux4oVn90MPE0kJRJbi3TJZWlCovDciYVJlJVeVFwRK0v0VTD9Oz1dfClKC3u2ZAKERLTO2aru8DZE-EPnIkBaMBjVvqi58xRXdI61QIlaAPW3m5fvm_P_jF_8f6Bt2bn50c6-Mvp99eovss7K5JKaFsH-2tV517BfRoXb6Oc-AvboIMfw
linkToPdf http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3db9MwELdgCMQL4lMLDDASb-DWcew4fkIF1o2vCQkm9c1yHBsmsaRrGqQ-849zdtJOmQSvsdu4_Z3vfuc73yH00tmUWqAShHmTEZ5KTxToSmLLTFjJTJ7HW2lfTvLjU_5xIRZD_lM7pFVudWJU1FVjwxn5lHEpaSAbYuqHtIiv7-dvlhckdJAKkdahncZ1dAOsJA1tHORC7s5bQkSLp2q4N0OzYtqC7Qr3y8B_KqhUOdmMbFMs4T_inVezJq-ETqNFmt9FdwYqiWc99vfQNVffRzf75pKbB-jPIUAYzsKwHRdlxr_BP46A4MbjIzNr6USxbyWd0GI6-wUO9pGhEzlrcRsbSLgKb9MO8UUHSHTnOBz5tdiaroXRcoNXZnlW4UAmz2FJBpS3CffcH6LT-eH3d8dkaLlArEjlmvgiAx-HC2YKD-DK1FnpjeNAKy14UpUMSslUEmiBz5g1HthTqgomhQVXGjTEI7RXN7XbR9gqJzhLMzDC8IXwES_KQihuZKZcrvIEvdr-2XrZV9bQMSKeFbqHRgM0OkKjNwl6G_DYzQxVseODZvVDD5tMc5UqnnnLZGl5qfLSgLxJJQxVlecFS9DBFk09bNVWXwpWgl7shgGhEDkxtWu6fg4QPx7myJEUjBY0HqnPfsZy3aHEU8FVgl5v5eXy5f_-wY__v9bn6BaIv_784eTTE3SbhUQbmpKUHaC99apzT4EprctncQv8BfzhEKs
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Emission+characteristics+variation+of+GaAs0.92Sb0.08%2FAl0.3Ga0.7As+strained+multiple+quantum+wells+caused+by+rapid+thermal+annealing&rft.jtitle=Scientific+reports&rft.au=Wang%2C+Dengkui&rft.au=Gao%2C+Xian&rft.au=Tang%2C+Jilong&rft.au=Fang%2C+Xuan&rft.date=2021-01-12&rft.pub=Nature+Publishing+Group+UK&rft.eissn=2045-2322&rft.volume=11&rft.issue=1&rft_id=info:doi/10.1038%2Fs41598-020-80796-y&rft.externalDocID=10_1038_s41598_020_80796_y
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=2045-2322&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=2045-2322&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=2045-2322&client=summon