Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors

• Published in: Nature communications Vol. 14; no. 1; pp. 1166 - 9
• Main Authors: Zhu, Li-Feng, Deng, Shiqing, Zhao, Lei, Li, Gen, Wang, Qi, Li, Linhai, Yan, Yongke, Qi, He, Zhang, Bo-Ping, Chen, Jun, Li, Jing-Feng
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 01.03.2023; Nature Publishing Group; Nature Portfolio
• Subjects: 639/301/119/996; 639/4077/4079; Antiferroelectricity; Breakdown; Capacitors; Density; Dielectric strength; Displacement; Doping; Energy storage; Humanities and Social Sciences; Lead free; multidisciplinary; Multilayers; Science; Science (multidisciplinary)

Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for...