Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors - Zhu, Li-Feng; Deng, Shiqing; Zhao, Lei; Li, Gen; Wang, Qi; Li, Linhai; Yan, Yongke; Qi, He; Zhang, Bo-Ping; Chen, Jun; Li, Jing-Feng (Nature communications, 2023)
Keywords: 639/301/119/996; 639/4077/4079; Antiferroelectricity; Breakdown; Capacitors; Density; Dielectric strength; Displacement; Doping; Energy storage; Humanities and Social Sciences; Lead free; multidisciplinary; Multilayers; Science; Science (multidisciplinary)